DMT6016LSS-13

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SO-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

9.2 A

Rds On - Drain-Source Resistance:

18 mOhms

Vgs th - Gate-Source Threshold Voltage:

1 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

17 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2.1 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Series:

DMT60

Transistor Type:

1 N-Channel

Brand:

Diodes Incorporated

Fall Time:

7 ns

Product Type:

MOSFET

Rise Time:

5.2 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

13 ns

Typical Turn-On Delay Time:

3.4 ns

Unit Weight:

0.002610 oz

Tags

DMT6016LSS, DMT6016LS, DMT6016, DMT601, DMT60, DMT6, DMT