DMT6016LSS stock, DMT6016LSS, DMT6016LSS-13


PartNumber	DMT6016LSS-13	DMT6016LSS	DMT6016LSS/////////////
Description	MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A
Manufacturer	Diodes Incorporated	DIODES	-
Product Category	MOSFET	Transistors - FETs, MOSFETs - Single	-
RoHS	Y	-	-
Technology	Si	Si	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	SO-8	-	-
Number of Channels	1 Channel	1 Channel	-
Transistor Polarity	N-Channel	N-Channel	-
Vds Drain Source Breakdown Voltage	60 V	-	-
Id Continuous Drain Current	9.2 A	-	-
Rds On Drain Source Resistance	18 mOhms	-	-
Vgs th Gate Source Threshold Voltage	1 V	-	-
Vgs Gate Source Voltage	10 V	-	-
Qg Gate Charge	17 nC	-	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Pd Power Dissipation	2.1 W	-	-
Configuration	Single	Single	-
Channel Mode	Enhancement	Enhancement	-
Packaging	Reel	Reel	-
Series	DMT60	DMT60	-
Transistor Type	1 N-Channel	1 N-Channel	-
Brand	Diodes Incorporated	-	-
Fall Time	7 ns	7 ns	-
Product Type	MOSFET	-	-
Rise Time	5.2 ns	5.2 ns	-
Factory Pack Quantity	2500	-	-
Subcategory	MOSFETs	-	-
Typical Turn Off Delay Time	13 ns	13 ns	-
Typical Turn On Delay Time	3.4 ns	3.4 ns	-
Unit Weight	0.002610 oz	0.002610 oz	-
Package Case	-	SO-8	-
Pd Power Dissipation	-	2.7 W	-
Vgs Gate Source Voltage	-	20 V	-
Id Continuous Drain Current	-	10.6 A	-
Vds Drain Source Breakdown Voltage	-	60 V	-
Vgs th Gate Source Threshold Voltage	-	2.5 V	-
Rds On Drain Source Resistance	-	16 mOhms	-
Qg Gate Charge	-	17 nC	-

Search Part Number : "DMT6016LSS", Match & Start with "DMT6016LSS" - Total : 4

Manufacturer	Part #	Description
Diodes Incorporated	DMT6016LSS-13	MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A
	DMT6016LSS	New and Original
	DMT6016LSS/////////////	New and Original
	DMT6016LSS-13	IGBT Transistors MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A

DMT6016LSS