RN1108MFV(TPL3)

Mfr. #:: RN1108MFV(TPL3)
Manufacturer:: Toshiba
Description:: Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 22K x 47Kohms
Lifecycle:: New from this manufacturer.
Datasheet:: RN1108MFV(TPL3) Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Toshiba

Product Category:: Bipolar Transistors - Pre-Biased

RoHS:: N

Configuration:: Single

Transistor Polarity:: NPN

Typical Input Resistor:: 22 kOhms

Typical Resistor Ratio:: 0.468

Mounting Style:: SMD/SMT

DC Collector/Base Gain hfe Min:: 80

Collector- Emitter Voltage VCEO Max:: 50 V

Continuous Collector Current:: 100 mA

Peak DC Collector Current:: 100 mA

Pd - Power Dissipation:: 150 mW

Maximum Operating Temperature:: + 150 C

Series:: RN1108

Packaging:: Reel

DC Current Gain hFE Max:: 80

Brand:: Toshiba

Product Type:: BJTs - Bipolar Transistors - Pre-Biased

Factory Pack Quantity:: 8000

Subcategory:: Transistors

Tags: RN1108, RN110, RN11, RN1

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RN1108MFV(TPL3) Description

***et: Trans Digital BJT NPN 50V 100mA 3-Pin VESM T/R

***i-Key: TRANS PREBIAS NPN 150MW VESM

***: 100MA 50V 3PIN 22K X 47KOHM

***ca Corp: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

***ical: Trans Digital BJT NPN 50V 100mA 3-Pin VMT T/R

***nell: DIGITAL TRANSISTOR, 50V, 0.1A; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.1(Ratio); RF Transistor Case: SOT-723; No. of Pins: 3 Pin; Product Range: DTC043Z Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ure Electronics: DTC143Z Series 50 V 100 mA Surface Mount NPN Digital Transistor - VMT-3

***ical: Trans Digital BJT NPN 50V 100mA 150mW 3-Pin VMT T/R

***ark: Digital Transistor Polarity:single Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:4.7Kohm; Base-Emitter Resistor R2:47Kohm; Resistor Ratio, R1 / R2:0.1(Ratio) Rohs Compliant: Yes

*** Stop Electro: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

***ure Electronics: DTC123J Series 50 V 100 mA Surface Mount NPN Digital Transistor - VMT-3

***ical: Trans Digital BJT NPN 50V 100mA 3-Pin VMT T/R

***ark: TRANSISTOR, NPN, 50V, 0.1A, SC-1055; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / R2:0.047; No. of Pins:3 ;RoHS Compliant: Yes

***et: Trans Digital BJT NPN 50V 100mA 3-Pin VESM T/R

***el Electronic: LDO Regulator Pos 1.8V 0.25A 6-Pin TDFN EP T/R

***i-Key: TRANS PREBIAS NPN 50V 0.1A VESM

***et: Trans Digital BJT NPN 50V 100mA 3-Pin VESM T/R

***i-Key: TRANS PREBIAS NPN 150MW VESM

***: 100MA 50V 3PIN 47K X 22KOHMS

***r Electronics: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

***emi: NPN Bipolar Digital Transistor (BRT)

***ical: Trans Digital BJT NPN 50V 100mA 600mW 3-Pin SOT-723 T/R

***ark: Brt Transistor, 50V, 22K/47Kohm, Sot-723; Digital Transistor Polarity:Single Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:22Kohm; Base-Emitter Resistor R2:47Kohm Rohs Compliant: Yes |Onsemi DTC124XM3T5G

Market price

Part #	Mfg.	Description	Stock	Price
RN1108MFV(TPL3) DISTI # 757-RN1108MFV(TPL3)	Toshiba America Electronic Components	Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 22K x 47Kohms RoHS: Not compliant	0

RN1108MFV(TPL3)

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes