TK100L60W,VQ

TK100L60W,VQ
Mfr. #:
TK100L60W,VQ
Manufacturer:
Toshiba
Description:
MOSFET DTMOSIV 600V 18mOhm 100A 800W 15000pF
Lifecycle:
New from this manufacturer.
Datasheet:
TK100L60W,VQ Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
TK100L60W,VQ DatasheetTK100L60W,VQ Datasheet (P4-P6)TK100L60W,VQ Datasheet (P7-P9)TK100L60W,VQ Datasheet (P10)
ECAD Model:
More Information:
TK100L60W,VQ more Information
Product Attribute
Attribute Value
Manufacturer:
Toshiba
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-3PL-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
100 A
Rds On - Drain-Source Resistance:
15 mOhms
Vgs th - Gate-Source Threshold Voltage:
3.7 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
360 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
797 W
Configuration:
Single
Tradename:
DTMOSIV
Height:
26 mm
Length:
20 mm
Series:
TK100L60
Transistor Type:
1 N-Channel
Width:
5 mm
Brand:
Toshiba
Fall Time:
125 ns
Product Type:
MOSFET
Rise Time:
130 ns
Factory Pack Quantity:
100
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
690 ns
Typical Turn-On Delay Time:
230 ns
Unit Weight:
0.245577 oz
Tags
TK100L, TK100, TK10, TK1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
DTMOSIV(WITH FAST DIODE)_600V_18MOHM MAX(VGS=10V)_TO-3P(L)
***roFlash
Mosfet N Ch 600V 100A TO3P(L)
***
100V 18M OHM VGS=10V TO-3P(L)
Gen-4 Super Junction DTMOS MOSFETs
Toshiba Gen-4 Super-Junction DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, DTMOSIV which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. With a reduction in the RDS(on) it makes it possible to house lower RDS(on) chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies. These devices are ideal for use with switching regulators.
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Availability
Stock:
179
On Order:
2162
Enter Quantity:
Current price of TK100L60W,VQ is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$35.88
$35.88
5
$29.80
$149.00
10
$29.57
$295.70
25
$28.96
$724.00
50
$28.66
$1 433.00
100
$28.51
$2 851.00
250
$26.26
$6 565.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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