 |  | | |
| PartNumber | TK100L60W,VQ | TK100L60W | TK100L60WVQ-ND |
| Description | MOSFET DTMOSIV 600V 18mOhm 100A 800W 15000pF | ||
| Manufacturer | Toshiba | TOSHIBA | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-3PL-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 15 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3.7 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 360 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 797 W | - | - |
| Configuration | Single | - | - |
| Tradename | DTMOSIV | - | - |
| Height | 26 mm | - | - |
| Length | 20 mm | - | - |
| Series | TK100L60 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 125 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 130 ns | - | - |
| Factory Pack Quantity | 100 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 690 ns | - | - |
| Typical Turn On Delay Time | 230 ns | - | - |
| Unit Weight | 0.245577 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
TK100L60W,VQ | MOSFET DTMOSIV 600V 18mOhm 100A 800W 15000pF | |
| TK100L60W | New and Original | ||
| TK100L60WVQ-ND | New and Original |