IRF7493TRPBF

Mfr. #:: IRF7493TRPBF
Manufacturer:: Infineon / IR
Description:: MOSFET MOSFT 80V 9.2A 15mOhm 31nC Qg
Lifecycle:: New from this manufacturer.
Datasheet:: IRF7493TRPBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRF7493TRPBF Datasheet IRF7493TRPBF Datasheet (P4-P6)IRF7493TRPBF Datasheet (P7-P9)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SO-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 80 V

Id - Continuous Drain Current:: 9.2 A

Rds On - Drain-Source Resistance:: 15 mOhms

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 31 nC

Pd - Power Dissipation:: 2.5 W

Configuration:: Single

Packaging:: Reel

Height:: 1.75 mm

Length:: 4.9 mm

Transistor Type:: 1 N-Channel

Width:: 3.9 mm

Brand:: Infineon / IR

Product Type:: MOSFET

Factory Pack Quantity:: 4000

Subcategory:: MOSFETs

Part # Aliases:: SP001575326

Unit Weight:: 0.019048 oz

Tags: IRF7493T, IRF7493, IRF749, IRF74, IRF7, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF7493TRPBF Description

***Components: In a Pack of 5, N-Channel MOSFET, 9.3 A, 80 V, 8-Pin SOIC Infineon IRF7493PBF

***ure Electronics: Single N-Channel 80 V 15 mOhm 35 nC HEXFET® Power Mosfet - SOIC-8

***ied Electronics & Automation: MOSFET, Power;N-Ch;VDSS 80V;RDS(ON) 11.5 Milliohms;ID 9.3A;SO-8;PD 2.5W;VGS +/-2

***C: Trans MOSFET N-CH 80V 9.3A 8-Pin SOIC Trans MOSFET N-CH 80V 9.3A 8-Pin SOIC Trans MOSFET N-CH 80V 9.3A 8-Pin SOIC

***ical: Trans MOSFET N-CH 80V 9.3A 8-Pin SOIC Tube

***ernational Rectifier: 80V Single N-Channel HEXFET Power MOSFET in a SO-8 package

***p One Stop Global: Trans MOSFET N-CH 80V 9.3A 8-Pin SOIC

***eco: 80 Volt Single N Channel HEXFET Power MOSFET

***th Star Micro: MOSFET N-CH 80V 9.3A 8-SOIC

***trelec: MOSFET SO-8 N 80V 7.4 A

***ark: Trench_Mosfets Rohs Compliant: Yes

***ronik: N-CH 80V 9,2A 15mOhm SO8 RoHSconf

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: Load Switch High Side

***ukat: N-Ch 80V 9,3A 2,5W 0,015R SO8

***ment14 APAC: Prices include import duty and tax. MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:9.3A; Fall Time tf:12ns; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pin Configuration:(1+2+3)S,4G, (8+7+6+5)D; Pulse Current Idm:74A; Rise Time:7.5ns; Termination Type:Surface Mount Device; Voltage Vds Typ:80V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***nell: MOSFET, N, SO-8; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:9.3A; Napięcie drenu / źródła Vds:80V; Rezystancja przewodzenia Rds(on):0.015ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:4V; Straty mocy Pd:2.5W; Rodzaj obudowy tranzystora:SOIC; Liczba pinów:8piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (27-Jun-2018); Czas narastania:7.5ns; Czas opadania tf:12ns; Konfiguracja pinów:(1+2+3)S,4G, (8+7+6+5)D; Liczba tranzystorów:1; Maks. prąd Id:9.3A; Napięcie Vds, typ.:80V; Napięcie Vgs pomiaru Rds on:10V; Napięcie Vgs, maks.:20V; Prąd impulsowy Idm:74A; Temperatura robocza, min.:-55°C; Typ zakończenia:Do montażu powierzchniowego; Zakres temperatury roboczej:-55°C do +150°C

Market price

Part #	Mfg.	Description	Stock	Price
IRF7493TRPBF DISTI # IRF7493PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 80V 9.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	767In Stock	1000:$0.6832 500:$0.8654 100:$1.1159 10:$1.4120 1:$1.5900
IRF7493TRPBF DISTI # IRF7493PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 80V 9.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	767In Stock	1000:$0.6832 500:$0.8654 100:$1.1159 10:$1.4120 1:$1.5900
IRF7493TRPBF DISTI # IRF7493PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 80V 9.3A 8-SOIC RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	On Order	4000:$0.6191
IRF7493TRPBF DISTI # IRF7493TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 80V 9.3A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7493TRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.4629 8000:$0.4459 16000:$0.4299 24000:$0.4159 40000:$0.4079
IRF7493TRPBF DISTI # IRF7493TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 80V 9.3A 8-Pin SOIC T/R (Alt: IRF7493TRPBF) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Asia - 0	4000:$0.3829 8000:$0.3722 12000:$0.3622 20000:$0.3526 40000:$0.3481 100000:$0.3436 200000:$0.3392
IRF7493TRPBF-1 DISTI # IRF7493TRPBF-1	Infineon Technologies AG	Trans MOSFET N-CH 80V 9.3A 8-Pin SOIC T/R (Alt: IRF7493TRPBF-1) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Asia - 0
IRF7493TRPBF DISTI # 13AC9202	Infineon Technologies AG	MOSFET, N-CH, 80V, 9.3A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:9.3A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0115ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation RoHS Compliant: Yes	0	1:$1.3200 10:$1.1300 25:$1.0400 50:$0.9530 100:$0.8650 250:$0.8150 500:$0.7640 1000:$0.6030
IRF7493TRPBF DISTI # 70017462	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 80V,RDS(ON) 11.5 Milliohms,ID 9.3A,SO-8,PD 2.5W,VGS +/-2 RoHS: Compliant	0	4000:$1.6000
IRF7493TRPBF DISTI # 942-IRF7493TRPBF	Infineon Technologies AG	MOSFET MOSFT 80V 9.2A 15mOhm 31nC Qg RoHS: Compliant	14	1:$1.3200 10:$1.1300 100:$0.8650 500:$0.7640 1000:$0.6030 4000:$0.5350
IRF7493TRPBF	International Rectifier	9.3 A, 80 V, 0.015 OHM, N-CHANNEL, SI, POWER, MOSFET, MS-012AA, TandR, LEAD FREE	132	66:$0.8700 18:$1.1600 1:$1.7400
IRF7493TRPBF DISTI # IRF7493TRPBF	International Rectifier	RoHS: Compliant	49950	1:$1.0600 500:$0.9000 1000:$0.8200
IRF7493TRPBF DISTI # 2725911	Infineon Technologies AG	MOSFET, N-CH, 80V, 9.3A, SOIC RoHS: Compliant	100	5:£0.9960 25:£0.8180 100:£0.6900 250:£0.6500 500:£0.6090
IRF7493TRPBF DISTI # 2725911	Infineon Technologies AG	MOSFET, N-CH, 80V, 9.3A, SOIC RoHS: Compliant	0	1:$2.0900 10:$1.7900 100:$1.3700 500:$1.2100 1000:$0.9550 4000:$0.8470

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Availability

Stock:: Available
On Order:: 1989
Enter Quantity:

Current price of IRF7493TRPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.31~~; ~~$1.31~~

10: ~~$1.12~~; ~~$11.20~~

100: ~~$0.86~~; ~~$86.50~~

500: ~~$0.76~~; ~~$382.00~~

1000: ~~$0.60~~; ~~$603.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IRF7493TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes