IRFU3711ZPBF

IRFU3711ZPBF
Mfr. #:
IRFU3711ZPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 20V 93A 5.7mOhm 18nC Qg
Lifecycle:
New from this manufacturer.
Datasheet:
IRFU3711ZPBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFU3711ZPBF DatasheetIRFU3711ZPBF Datasheet (P4-P6)IRFU3711ZPBF Datasheet (P7-P9)IRFU3711ZPBF Datasheet (P10-P12)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-251-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
93 A
Rds On - Drain-Source Resistance:
7.8 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
18 nC
Pd - Power Dissipation:
79 W
Configuration:
Single
Packaging:
Tube
Height:
6.22 mm
Length:
6.73 mm
Transistor Type:
1 N-Channel
Width:
2.38 mm
Brand:
Infineon / IR
Product Type:
MOSFET
Factory Pack Quantity:
75
Subcategory:
MOSFETs
Part # Aliases:
SP001557746
Unit Weight:
0.139332 oz
Tags
IRFU3711, IRFU371, IRFU37, IRFU3, IRFU, IRF
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
20V Single N-Channel HEXFET Power MOSFET in a I-Pak package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 30A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:93A; On Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: Yes
***nell
MOSFET, N, 20V, I-PAK; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:93A; Resistance, Rds On:0.0057ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2V; Case Style:I-PAK; Termination Type:Through Hole; Current, Idm Pulse:370A; No. of Pins:3; Power Dissipation:79mW; SMD Marking:79; Time, t Off:15ns; Time, t On:12ns; Voltage, Vds Max:20V
***(Formerly Allied Electronics)
MOSFET, 25V, 81A, 5.7 MOHM, 10 NC QG, LOGIC LEVEL, I-PAK
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 81A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N-CH 25V 81A IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:25V; On Resistance Rds(on):5.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:63W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:81A; Package / Case:IPAK; Power Dissipation Pd:63W; Power Dissipation Pd:63W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
***emi
Power MOSFET 25V 78A 6 mOhm Single N-Channel DPAK
***et
Trans MOSFET N-CH 25V 14.8A 3-Pin(3+Tab) DPAK-SL Rail
***ser
MOSFETs- Power and Small Signal 25V 78A N-Channel
***r Electronics
Power Field-Effect Transistor, 11.4A I(D), 25V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***or
MOSFET N-CH 25V 11.4A/78A IPAK
***emi
Power MOSFET 25V 78A 6 mOhm Single N-Channel DPAK
***et
Trans MOSFET N-CH 25V 14.8A 3-Pin (3+Tab) IPAK Rail
***ser
MOSFETs- Power and Small Signal 25V 78A N-Channel
***r Electronics
Power Field-Effect Transistor, 11.4A I(D), 25V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***or
MOSFET N-CH 25V 11.4A/78A IPAK
***nell
MOSFET, N, 25V, I-PAK; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:25V; Current, Id Cont:78A; Resistance, Rds On:0.006ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.6V; Case Style:I-PAK; Termination Type:Through Hole; Power, Pd:64W; Voltage, Vds Max:25V
***emi
Power MOSFET 24V 85A 5.2 mOhm Single N-Channel DPAK
***et
Trans MOSFET N-CH 24V 17A 3-Pin(3+Tab) IPAK Rail
***ser
MOSFETs- Power and Small Signal 24V 85A N-Channel
***r Electronics
Power Field-Effect Transistor, 85A I(D), 24V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:85A; Drain Source Voltage, Vds:24V; On Resistance, Rds(on):5.2mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.5V; Power Dissipation, Pd:78.1W ;RoHS Compliant: Yes
Part # Mfg. Description Stock Price
IRFU3711ZPBF
DISTI # IRFU3711ZPBF-ND
Infineon Technologies AGMOSFET N-CH 20V 93A I-PAK
RoHS: Compliant
Min Qty: 675
Container: Tube
Limited Supply - Call
    IRFU3711ZPBF
    DISTI # 70018381
    Infineon Technologies AGIRFU3711ZPBF N-channel MOSFET Transistor,93 A,20 V,3-Pin IPAK
    RoHS: Compliant
    0
    • 675:$1.8400
    • 1350:$1.8030
    • 3375:$1.7480
    • 6750:$1.6740
    • 16875:$1.5640
    IRFU3711ZPBF
    DISTI # 942-IRFU3711ZPBF
    Infineon Technologies AGMOSFET MOSFT 20V 93A 5.7mOhm 18nC Qg
    RoHS: Compliant
    0
      IRFU3711ZPBFInternational Rectifier 
      RoHS: Compliant
      Europe - 1500
        IRFU3711ZPBF
        DISTI # 1436988
        Infineon Technologies AG 
        RoHS: Compliant
        0
        • 1:$2.8800
        • 10:$1.5100
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        Availability
        Stock:
        Available
        On Order:
        1000
        Enter Quantity:
        Current price of IRFU3711ZPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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