IPD80N06S3-09

Mfr. #:: IPD80N06S3-09
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 55V 80A DPAK-2
Lifecycle:: New from this manufacturer.
Datasheet:: IPD80N06S3-09 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IPD80N06S3-09 Datasheet IPD80N06S3-09 Datasheet (P4-P6)IPD80N06S3-09 Datasheet (P7-P9)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-252-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 55 V

Id - Continuous Drain Current:: 80 A

Rds On - Drain-Source Resistance:: 8.4 mOhms

Vgs - Gate-Source Voltage:: 20 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 107 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Height:: 2.3 mm

Length:: 6.5 mm

Transistor Type:: 1 N-Channel

Width:: 6.22 mm

Brand:: Infineon Technologies

Fall Time:: 37 ns

Product Type:: MOSFET

Rise Time:: 42 ns

Factory Pack Quantity:: 2500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 26 ns

Typical Turn-On Delay Time:: 23 ns

Part # Aliases:: IPD80N06S309XT

Unit Weight:: 0.139332 oz

Tags: IPD80N, IPD80, IPD8, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD80N06S3-09 Description

***et Europe: Trans MOSFET N-CH 55V 80A 3-Pin TO-252

***i-Key: MOSFET N-CH 55V 80A TO252-3

*** Electronics: OPTLMOS N-CHANNEL POWER MOSFET

***el Nordic: Contact for details

***ure Electronics: Single N-Channel 55 V 8 mOhm 44 nC HEXFET® Power Mosfet - TO-252AA

***essParts.Net: INTERNATIONAL RECTIFIER IRLR3705ZPBF / MOSFET N-CH 55V 42A DPAK INTER

***(Formerly Allied Electronics): MOSFET, Power,N-Ch,VDSS 55V,RDS(ON) 6.5 Milliohms,ID 42A,D-Pak (TO-252AA),-55C

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***ment14 APAC: N CHANNEL MOSFET, 55V, 89A, D-PAK; Trans; Transistor Polarity:N Channel; Continuous Drain Current Id:89A;

*** Stop Electro: Power Field-Effect Transistor, 42A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***nell: MOSFET, N, LOGIC, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 89A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.008ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 130W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Alternate Case Style: D-PAK; Current Id Max: 89A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Pulse Current Idm: 130A; SMD Marking: IRLR3705Z; Termination Type: Surface Mount Device; Voltage Vds Typ: 55V; Voltage Vgs Max: 3V; Voltage Vgs Rds on Measurement: 10V

***ineon SCT: 60V, N-Ch, 6.9 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T2, PG-TO252-3, RoHS

***ical: Trans MOSFET N-CH 60V 90A Automotive 3-Pin(2+Tab) DPAK T/R

***ineon: Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); 100% Avalanche tested; Ultra low RDSon | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors

***et Europe: Trans MOSFET N-CH 60V 97A 3-Pin TO-252 T/R

***ronik: N-CH 60V 97A 6,3mOhm TO252 RoHSconf

***el Electronic: MOSFET 60V 97A 136W AEC-Q101 Qualified

***ark: N-Channel 60-V (D-S) 175C Mosfet

***ical: Trans MOSFET N-CH 40V 16.8A Automotive 3-Pin(2+Tab) DPAK T/R

***des Inc SCT: 40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS

***et: MOSFET BVDSS: 31V~40V TO252 T&R 2.5K

***i-Key: MOSFET N-CH 40V 16.8A/70A TO252

***ical: Trans MOSFET N-CH 60V 14.8A Automotive 3-Pin(2+Tab) DPAK T/R

***des Inc SCT: 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS

***et: MOSFET BVDSS: 41V~60V TO252 T&R 2.5K

***i-Key: MOSFET N-CH 60V 14.8A/70A TO252

Market price

Part #	Mfg.	Description	Stock	Price
IPD80N06S3-09 DISTI # IPD80N06S3-09-ND	Infineon Technologies AG	MOSFET N-CH 55V 80A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
IPD80N06S3-09 DISTI # IPD80N06S3-09	Infineon Technologies AG	Trans MOSFET N-CH 55V 80A 3-Pin TO-252 - Bulk (Alt: IPD80N06S3-09) RoHS: Not Compliant Min Qty: 695 Container: Bulk	Americas - 0	6950:$0.4569 3475:$0.4649 2085:$0.4809 1390:$0.4999 695:$0.5179
IPD80N06S3-09 DISTI # 726-IPD80N06S3-09	Infineon Technologies AG	MOSFET N-Ch 55V 80A DPAK-2 RoHS: Compliant	0
IPD80N06S3-09	Infineon Technologies AG	Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant	7004	1000:$0.4700 500:$0.5000 100:$0.5200 25:$0.5400 1:$0.5800

Image	Part #	Description
	Mfr.#: IPD80N04S306ATMA1 OMO.#: OMO-IPD80N04S306ATMA1	MOSFET N-CHANNEL_30/40V
	Mfr.#: IPD80N04S3-06 OMO.#: OMO-IPD80N04S3-06	MOSFET N-Ch 40V 80A DPAK-2 OptiMOS-T
	Mfr.#: IPD80N06S3-09 OMO.#: OMO-IPD80N06S3-09	MOSFET N-Ch 55V 80A DPAK-2
	Mfr.#: IPD80N04S306BATMA1 OMO.#: OMO-IPD80N04S306BATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CHANNEL_30/40V
	Mfr.#: IPD80N04S3-06QN0406 OMO.#: OMO-IPD80N04S3-06QN0406-1190	New and Original
	Mfr.#: IPD80N04S3-06 OMO.#: OMO-IPD80N04S3-06-1190	MOSFET N-Ch 40V 80A DPAK-2 OptiMOS-T
	Mfr.#: IPD80N04S3-06 QN0406 OMO.#: OMO-IPD80N04S3-06-QN0406-1190	New and Original
	Mfr.#: IPD80N04S3-06B OMO.#: OMO-IPD80N04S3-06B-1190	New and Original
	Mfr.#: IPD80N04S306ATMA1 OMO.#: OMO-IPD80N04S306ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 40V 90A TO252-3
	Mfr.#: IPD80N06S3-09 OMO.#: OMO-IPD80N06S3-09-INFINEON-TECHNOLOGIES	MOSFET N-CH 55V 80A TO252-3

IPD80N06S3-09

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes