OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IPZ60R040C7XKSA1

IPZ60R040C7XKSA1
Mfr. #:
IPZ60R040C7XKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 600V 50A TO247-4
Lifecycle:
New from this manufacturer.
Datasheet:
IPZ60R040C7XKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPZ60R040C7XKSA1 more Information
Product Attribute
Attribute Value
Tags
IPZ60R04, IPZ60R0, IPZ60, IPZ6, IPZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 40 mOhm 107 nC CoolMOS™ Power Mosfet - TO-247-3-4
***ark
Mosfet, N-Ch, 600V, 50A, To-247-4 Rohs Compliant: Yes
***ineon SCT
CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies, PG-TO247-4, RoHS
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Part # Mfg. Description Stock Price
IPZ60R040C7XKSA1
DISTI # V36:1790_06377662		Infineon Technologies AGTrans MOSFET N-CH 600V 50A 4-Pin(4+Tab) TO-247 Tube
RoHS: Compliant		0
  • 240000:$6.2980
  • 120000:$6.3040
  • 24000:$7.1600
  • 2400:$8.9780
  • 240:$9.3000
IPZ60R040C7XKSA1
DISTI # IPZ60R040C7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 600V 50A TO247-4
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 720:$8.2322
  • 240:$9.2541
  • 25:$10.5032
  • 10:$10.9570
  • 1:$11.9200
IPZ60R040C7XKSA1
DISTI # IPZ60R040C7XKSA1		Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: IPZ60R040C7XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$6.7900
  • 1440:$6.8900
  • 960:$7.1900
  • 480:$7.4900
  • 240:$7.6900
IPZ60R040C7XKSA1
DISTI # SP001296204		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: SP001296204)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€5.9900
  • 500:€6.3900
  • 100:€6.5900
  • 50:€6.8900
  • 25:€7.1900
  • 10:€7.4900
  • 1:€8.0900
IPZ60R040C7XKSA1
DISTI # 13AC9102		Infineon Technologies AGMOSFET, N-CH, 600V, 50A, TO-247-4,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.034ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes0
  • 500:$7.9200
  • 250:$8.4600
  • 100:$8.9000
  • 50:$9.5000
  • 25:$10.1000
  • 10:$10.5300
  • 1:$11.4600
IPZ60R040C7XKSA1
DISTI # 726-IPZ60R040C7XKSA1		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		0
  • 1:$11.3500
  • 10:$10.4300
  • 25:$10.0000
  • 100:$8.8100
  • 250:$8.3800
  • 500:$7.8400
IPZ60R040C7XKSA1
DISTI # 2726083		Infineon Technologies AGMOSFET, N-CH, 600V, 50A, TO-247-4
RoHS: Compliant		0
  • 720:$12.4100
  • 240:$13.9500
  • 25:$15.8300
  • 10:$16.5200
  • 1:$17.9600
IPZ60R040C7XKSA1
DISTI # 2726083		Infineon Technologies AGMOSFET, N-CH, 600V, 50A, TO-247-40
  • 100:£6.8600
  • 50:£7.3200
  • 10:£7.7900
  • 5:£8.8400
  • 1:£9.3900
IPZ60R040C7XKSA1
DISTI # IPZ60R040C7		Infineon Technologies AGN-Ch 600V 50A 227W 0,04R TO247-4
RoHS: Compliant		0
  • 1:€11.1400
  • 10:€8.1400
  • 50:€6.6400
  • 100:€6.3300
Image Part # Description
IPZ60R040C7XKSA1

Mfr.#: IPZ60R040C7XKSA1

OMO.#: OMO-IPZ60R040C7XKSA1

 MOSFET HIGH POWER_NEW
IPZ60R041P6FKSA1

Mfr.#: IPZ60R041P6FKSA1

OMO.#: OMO-IPZ60R041P6FKSA1

 MOSFET HIGH POWER_PRICE/PERFORM
IPZ60R040C7

Mfr.#: IPZ60R040C7

OMO.#: OMO-IPZ60R040C7-1190

 Trans MOSFET N-CH 600V 50A 4-Pin(4+Tab) TO-247 Tube
IPZ60R040C7XKSA1

Mfr.#: IPZ60R040C7XKSA1

OMO.#: OMO-IPZ60R040C7XKSA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 600V 50A TO247-4
IPZ60R041P6

Mfr.#: IPZ60R041P6

OMO.#: OMO-IPZ60R041P6-1190

 MOSFET HIGH POWER_LEGACY
IPZ60R041P6FKSA1

Mfr.#: IPZ60R041P6FKSA1

OMO.#: OMO-IPZ60R041P6FKSA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 600V TO247-4
Availability
Stock:
Available
On Order:
3500
Enter Quantity:
Current price of IPZ60R040C7XKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$10.18
$10.18
10
$9.68
$96.76
100
$9.17
$916.65
500
$8.66
$4 328.65
1000
$8.15
$8 148.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Start with
Newest Products
More Newest Products
Top