IPI057N08N3 G

Mfr. #:: IPI057N08N3 G
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 80V 80A I2PAK-3
Lifecycle:: New from this manufacturer.
Datasheet:: IPI057N08N3 G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-262-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 80 V

Id - Continuous Drain Current:: 80 A

Rds On - Drain-Source Resistance:: 5.7 mOhms

Vgs - Gate-Source Voltage:: 20 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 150 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Tube

Height:: 9.45 mm

Length:: 10.2 mm

Series:: IPI057N08

Transistor Type:: 1 N-Channel

Width:: 4.5 mm

Brand:: Infineon Technologies

Fall Time:: 10 ns

Product Type:: MOSFET

Rise Time:: 66 ns

Factory Pack Quantity:: 500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 38 ns

Typical Turn-On Delay Time:: 18 ns

Part # Aliases:: IPI057N08N3GXKSA1

Unit Weight:: 0.084199 oz

Tags: IPI057, IPI05, IPI0, IPI

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPI057N08N3 G Description

***ponent Stockers USA: 80 A 80 V 0.0057 ohm N-CHANNEL Si POWER MOSFET TO-262AA

***el Electronic: Power Field-Effect Transistor, 80A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3

***ment14 APAC: MOSFET, N CH, 80A, 80V, PG-TO262-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:80V; On Resistance Rds(on):4.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:150W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-262; No. of Pins:3; Current Id Max:80A; Operating Temperature Range:-55°C to +175°C; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

Market price

Part #	Mfg.	Description	Stock	Price
IPI057N08N3 G DISTI # IPI057N08N3G-ND	Infineon Technologies AG	MOSFET N-CH 80V 80A TO262-3 RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call
IPI057N08N3 G DISTI # 726-IPI057N08N3G	Infineon Technologies AG	MOSFET N-Ch 80V 80A I2PAK-3 RoHS: Compliant	0

Image	Part #	Description
	Mfr.#: IPI057N08N3 G OMO.#: OMO-IPI057N08N3-G	MOSFET N-Ch 80V 80A I2PAK-3
	Mfr.#: IPI057N08N3 OMO.#: OMO-IPI057N08N3-1190	New and Original
	Mfr.#: IPI057N08N3 G OMO.#: OMO-IPI057N08N3-G-INFINEON-TECHNOLOGIES	MOSFET N-CH 80V 80A TO262-3
	Mfr.#: IPI057N08N3G OMO.#: OMO-IPI057N08N3G-1190	New and Original

IPI057N08N3 G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes