RQ3E180GNTB

RQ3E180GNTB
Mfr. #:
RQ3E180GNTB
Manufacturer:
Rohm Semiconductor
Description:
MOSFET 4.5V Drive Nch MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
RQ3E180GNTB Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
RQ3E180GNTB more Information
Product Attribute
Attribute Value
Manufacturer:
ROHM Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
HSMT-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
18 A
Rds On - Drain-Source Resistance:
4.3 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
22.4 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2 W
Configuration:
Single
Packaging:
Reel
Transistor Type:
1 N-Channel
Brand:
ROHM Semiconductor
Forward Transconductance - Min:
17 S
Fall Time:
10.2 ns
Product Type:
MOSFET
Rise Time:
6.9 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
56.8 ns
Typical Turn-On Delay Time:
16.5 ns
Part # Aliases:
RQ3E180GN
Tags
RQ3E180G, RQ3E18, RQ3E1, RQ3E, RQ3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 18A 8-Pin HSMT EP T/R
***et
4.5V DRIVE NCH MOSFET, HSMT8, NCH, DISCRETE
***S
French Electronic Distributor since 1988
***nell
MOSFET, N-CH, 30V, 39A, HSMT-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 39A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 20W; Transistor Case Style: HSMT; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
Silicon Power MOSFETs
ROHM Semiconductor Silicon Power MOSFETs feature ultrafast switching speeds and low on-resistance. The MOSFETs are available in a wide lineup of packages, including the miniature 0604 package, for space saving in designs.
Medium Power MOSFETs
ROHM Medium Power MOSFETs are low ON-resistance devices useful for a wide range of applications. They feature a broad lineup with compact, high-power and complex types to meet various needs. They come in high-power small mold packages and typical applications are for DC/DC converters and load switches.
Part # Mfg. Description Stock Price
RQ3E180GNTB
DISTI # RQ3E180GNTBCT-ND
ROHM SemiconductorMOSFET N-CH 30V 18A 8-HSMT
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2990In Stock
  • 1000:$0.2587
  • 500:$0.3234
  • 100:$0.4091
  • 10:$0.5340
  • 1:$0.6100
RQ3E180GNTB
DISTI # RQ3E180GNTBDKR-ND
ROHM SemiconductorMOSFET N-CH 30V 18A 8-HSMT
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2990In Stock
  • 1000:$0.2587
  • 500:$0.3234
  • 100:$0.4091
  • 10:$0.5340
  • 1:$0.6100
RQ3E180GNTB
DISTI # RQ3E180GNTBTR-ND
ROHM SemiconductorMOSFET N-CH 30V 18A 8-HSMT
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 15000:$0.2088
  • 6000:$0.2119
  • 3000:$0.2276
RQ3E180GNTB
DISTI # RQ3E180GNTB
ROHM Semiconductor4.5V DRIVE NCH MOSFET, HSMT8, NCH, DISCRETE - Tape and Reel (Alt: RQ3E180GNTB)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.2009
  • 18000:$0.2069
  • 12000:$0.2189
  • 6000:$0.2319
  • 3000:$0.2479
RQ3E180GNTB
DISTI # RQ3E180GNTB
ROHM Semiconductor4.5V DRIVE NCH MOSFET, HSMT8, NCH, DISCRETE (Alt: RQ3E180GNTB)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€0.2199
  • 500:€0.2369
  • 100:€0.2569
  • 50:€0.2799
  • 25:€0.3089
  • 10:€0.3429
  • 1:€0.3859
RQ3E180GNTB
DISTI # 755-RQ3E180GNTB
ROHM SemiconductorMOSFET 4.5V Drive Nch MOSFET
RoHS: Compliant
3078
  • 1:$0.5800
  • 10:$0.4870
  • 100:$0.3140
  • 1000:$0.2520
  • 3000:$0.2120
  • 9000:$0.2050
  • 24000:$0.1970
RQ3E180GNTBROHM Semiconductor 2376
  • 1177:$0.5950
  • 236:$0.6800
  • 1:$1.7000
RQ3E180GNTB
DISTI # 2706764
ROHM SemiconductorMOSFET, N-CH, 30V, 39A, HSMT-8
RoHS: Compliant
0
  • 500:$0.4880
  • 100:$0.6170
  • 10:$0.8050
  • 1:$0.9200
RQ3E180GNTB
DISTI # 2706764
ROHM SemiconductorMOSFET, N-CH, 30V, 39A, HSMT-810
  • 500:£0.2110
  • 250:£0.2250
  • 100:£0.2390
  • 10:£0.4130
  • 1:£0.5080
RQ3E180GNTBROHM Semiconductor 3000
  • 1:¥7.6286
  • 100:¥4.3254
  • 1500:¥2.7423
  • 3000:¥2.0430
RQ3E180GNTBROHM SemiconductorMOSFET 4.5V Drive Nch MOSFET
RoHS: Compliant
Americas -
    RQ3E180GNTBROHM SemiconductorRoHS(ship within 1day)2970
    • 1:$0.9400
    • 10:$0.7100
    • 50:$0.4700
    • 100:$0.3800
    • 500:$0.3500
    • 1000:$0.3400
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    Availability
    Stock:
    Available
    On Order:
    1986
    Enter Quantity:
    Current price of RQ3E180GNTB is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.58
    $0.58
    10
    $0.49
    $4.87
    100
    $0.31
    $31.40
    1000
    $0.25
    $252.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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