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| PartNumber | RQ3E180GNTB | RQ3E180GN | RQ3E180GN , SIZA60 |
| Description | MOSFET 4.5V Drive Nch MOSFET | ||
| Manufacturer | ROHM Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | HSMT-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 18 A | - | - |
| Rds On Drain Source Resistance | 4.3 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 22.4 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Single | - | - |
| Packaging | Reel | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | ROHM Semiconductor | - | - |
| Forward Transconductance Min | 17 S | - | - |
| Fall Time | 10.2 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 6.9 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 56.8 ns | - | - |
| Typical Turn On Delay Time | 16.5 ns | - | - |
| Part # Aliases | RQ3E180GN | - | - |