BSP33,115

Mfr. #:: BSP33,115
Manufacturer:: Nexperia
Description:: Bipolar Transistors - BJT TRANS MED PWR TAPE-7
Lifecycle:: New from this manufacturer.
Datasheet:: BSP33,115 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: BSP33,115 Datasheet BSP33,115 Datasheet (P4-P6)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Nexperia

Product Category:: Bipolar Transistors - BJT

RoHS:: Y

Mounting Style:: SMD/SMT

Package / Case:: SOT-223-3

Transistor Polarity:: PNP

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 80 V

Collector- Base Voltage VCBO:: 90 V

Emitter- Base Voltage VEBO:: 5 V

Maximum DC Collector Current:: 1 A

Gain Bandwidth Product fT:: 100 MHz

Minimum Operating Temperature:: - 65 C

Maximum Operating Temperature:: + 150 C

Height:: 1.7 mm

Length:: 6.7 mm

Packaging:: Reel

Width:: 3.7 mm

Brand:: Nexperia

Pd - Power Dissipation:: 1300 mW

Product Type:: BJTs - Bipolar Transistors

Qualification:: AEC-Q101

Factory Pack Quantity:: 1000

Subcategory:: Transistors

Part # Aliases:: BSP33 T/R

Unit Weight:: 0.003951 oz

Tags: BSP33, BSP3, BSP

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSP33,115 Description

***ment14 APAC: BIPOLAR TRANSISTOR, MED POWER, PNP, -80V, -1A, 4SOT223

***ow.cn: Trans GP BJT PNP 80V 1A 1300mW Automotive 4-Pin(3+Tab) SC-73 T/R

***enic: 80V 1.3W 1A 100@100mA,5V 100MHz 500mV@500mA,50mA PNP +150¡æ@(Tj) SOT-223 Bipolar Transistors - BJT ROHS

***peria: 80 V, 1 A PNP medium power transistor

***ark: Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:-80V; Transition Frequency Typ, ft:100MHz; Power Dissipation, Pd:1.3W; DC Collector Current:-1A; DC Current Gain Max (hfe):100 ;RoHS Compliant: Yes

***eco: Bipolar Junction Transistor (BJT) PNP 60V 600mA 1W SOT-223

***ow.cn: Trans GP BJT PNP 60V 0.8A 1000mW 4-Pin(3+Tab) SOT-223 T/R

***r Electronics: Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-261AA

***ure Electronics: PZT2907A Series 60 V CE Breakdown .8 A PNP General Purpose Amplifier - SOT-223

***ark: Bipolar Transistor, Pnp, -60V; Transistor Polarity:pnp; Collector Emitter Voltage V(Br)Ceo:-60V; Transition Frequency Ft:200Mhz; Power Dissipation Pd:1W; Dc Collector Current:-800Ma; Dc Current Gain Hfe:100Hfe; No. Of Pins:3Pins Rohs Compliant: Yes

***rchild Semiconductor: The PN2907A, MMBT2907A, and PZT2907A are 60 V PNP bipolar transistors designed for use as a general-purpose amplifier or switch in applications that require up to 500 mA. Offered in an ultra-small surface-mount package (SOT-223), the PZT2907A is ideal for spaceconstrained systems. The NPN complementary types are the PN2222A, MMBT2222A, and PZT2222A; respectively.

***nell: TRANSISTOR, PNP, SOT-223; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -60V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 1W; DC Collector Current: -800mA; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Application Code: GP; Av Current Ic: 800mA; Collector Emitter Saturation Voltage Vce(on): -400mV; Continuous Collector Current Ic Max: 800mA; Current Ic Continuous a Max: 800mA; Current Ic hFE: 150mA; Gain Bandwidth ft Min: 200MHz; Gain Bandwidth ft Typ: 200MHz; Hfe Min: 100; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 1W; SMD Marking: PZT2907A; Voltage Vcbo: 60V

***roFlash: Trans GP BJT PNP 60V 1A 2000mW Automotive 4-Pin(3+Tab) SOT-223 T/R

***ark: Trans, Pnp, 60V, 1A, 150Deg C, 2W Rohs Compliant: Yes

***S: French Electronic Distributor since 1988

***ure Electronics: NZT Series PNP 1 W 80 V 1 A Surface Mount General Purpose Transistor - SOT-223

*** Electronics: Bipolar Transistors - BJT PNP Transistor General Purpose

***r Electronics: Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon

***enic: SOT-223-4L Bipolar Transistors - BJT ROHS

***rchild Semiconductor: PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 800 mA. Sourced from Process 79.

***S.I.T. Europe - USA - Asia: Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin

***ow.cn: Trans GP BJT PNP 80V 1A 2000mW 4-Pin(3+Tab) SOT-223 T/R

***ure Electronics: BCP5X Series 80 V 1 A 2 W PNP Medium Power Transistor - SOT-223

***(Formerly Allied Electronics): Trans GP BJT PNP 80V 1A 4Pin SOT223

*** Source Electronics: Trans GP BJT PNP 80V 1.2A 1500mW 4-Pin(3+Tab) SOT-223 T/R / TRANS PNP 80V 1.5A SOT-223

***ure Electronics: BCP53 Series 80 V 1.2 A 0.65 W SMT PNP General Purpose Amplifier - SOT-223

*** Electronic Components: Bipolar Transistors - BJT SOT-223 PNP GP AMP

***r Electronics: Power Bipolar Transistor, 1.2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin

***ark: Transistor; Transistor Type:Bipolar; Transistor Polarity:PNP; Power Dissipation, Pd:1.5W; DC Current Gain Min (hfe):25; Package/Case:SOT-223; C-E Breakdown Voltage:80V; DC Collector Current:1.2A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes

***rchild Semiconductor: This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.0 A. Sourced from Process 78. See BCP52 for characteristics.

***ure Electronics: Bipolar (BJT) Transistor PNP 80V 1A 150MHz 2W Surface Mount SOT-223

***p One Stop Global: Trans GP BJT PNP 80V 1A 2000mW Automotive 4-Pin(3+Tab) SOT-223 T/R

***ark: Trans, Pnp, 80V, 1A, 150Deg C, 2W Rohs Compliant: Yes

***S: French Electronic Distributor since 1988

Market price

Part #	Mfg.	Description	Stock	Price
BSP33,115 DISTI # 1727-5490-2-ND	Nexperia	TRANS PNP 80V 1A SOT223 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	On Order	10000:$0.2953 5000:$0.2989 2000:$0.3211 1000:$0.3543
BSP33,115 DISTI # 1727-5490-1-ND	Nexperia	TRANS PNP 80V 1A SOT223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	500:$0.4562 100:$0.5771 10:$0.7530 1:$0.8600
BSP33,115 DISTI # 1727-5490-6-ND	Nexperia	TRANS PNP 80V 1A SOT223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	500:$0.4562 100:$0.5771 10:$0.7530 1:$0.8600
BSP33,115 DISTI # BSP33,115	Nexperia	Trans GP BJT PNP 80V 1A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: BSP33,115) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.1499 7000:$0.1479 12000:$0.1449 25000:$0.1409 50000:$0.1379
BSP33,115 DISTI # 771-BSP33115	Nexperia	Bipolar Transistors - BJT TRANS MED PWR TAPE-7 RoHS: Compliant	0	1000:$0.3380
BSP33 T/R DISTI # 771-BSP33-T/R	NXP Semiconductors	Bipolar Transistors - BJT TRANS MED PWR TAPE-7 RoHS: Compliant	0
BSP33,115 DISTI # 1757920	Nexperia	TRANS PNP 80V 0.1A SOT223 RoHS: Compliant	0	1:£0.7660 10:£0.6430 50:£0.4510 200:£0.4040 500:£0.3570

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Availability

Stock:: Available
On Order:: 5000
Enter Quantity:

Current price of BSP33,115 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.78~~; ~~$0.78~~

10: ~~$0.65~~; ~~$6.54~~

100: ~~$0.42~~; ~~$42.20~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes