IRFB4212PBF

Mfr. #:: IRFB4212PBF
Manufacturer:: Infineon Technologies
Description:: Darlington Transistors MOSFET MOSFT 100V 18A 72.5mOhm 15nC Qg
Lifecycle:: New from this manufacturer.
Datasheet:: IRFB4212PBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IRFB4212PBF Datasheet IRFB4212PBF Datasheet (P4-P6)IRFB4212PBF Datasheet (P7-P8)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer: IR

Product Category: FETs - Single

Packaging: Tube

Unit-Weight: 0.211644 oz

Mounting-Style: Through Hole

Package-Case: TO-220-3

Technology: Si

Number-of-Channels: 1 Channel

Configuration: Single

Transistor-Type: 1 N-Channel

Pd-Power-Dissipation: 60 W

Vgs-Gate-Source-Voltage: 20 V

Id-Continuous-Drain-Current: 18 A

Vds-Drain-Source-Breakdown-Voltage: 100 V

Rds-On-Drain-Source-Resistance: 72.5 mOhms

Transistor-Polarity: N-Channel

Qg-Gate-Charge: 15 nC

Tags: IRFB421, IRFB42, IRFB4, IRFB, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFB4212PBF Description

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 58Milliohms;ID 18A;TO-220AB;PD 60W;gFS 11S

***ineon SCT: 100V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***ical: Trans MOSFET N-CH 100V 18A 3-Pin(3+Tab) TO-220AB Tube

*** Electronics: INTERNATIONAL RECTIFIER IRFB4212PBF MOSFET Transistor, N Channel, 18 A, 100 V, 72.5 mohm, 10 V, 5 V

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 18A I(D), 100V, 0.0725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC; Class D Audio; Consumer Full-Bridge; Full-Bridge; Push-Pull

***ment14 APAC: MOSFET, N, 100V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:100V; On Resistance Rds(on):72.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4212; Current Id Max:18A; N-channel Gate Charge:15nC; Package / Case:TO-220AB; Power Dissipation Pd:60W; Power Dissipation Pd:60mW; Pulse Current Idm:57A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V

***ponent Stockers USA: 22 A 100 V 0.064 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***Yang: MOSFET N-CH 100V 22A TO-220AB - Bulk

***ter Electronics: PWR MOS ULTRAFET 100V/22A/0.06

***ure Electronics: Single N-Channel 100 V 0.16 Ohms Flange Mount Power Mosfet - TO-220-3

*** electronic: Transistor MOSFET N-Ch. 16A/100V TO220

***et: Trans MOSFET N-CH 100V 14A 3-Pin (3+Tab) TO-220AB

***enic: 100V 14A 88W 160m´Î@10V8.4A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

*** Stop Electro: Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, 100V, 14A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:100V; On Resistance Rds(on):160mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:14A; Junction to Case Thermal Resistance A:1.7°C/W; Package / Case:TO-220AB; Power Dissipation Pd:88W; Power Dissipation Pd:88W; Pulse Current Idm:60A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 90Milliohms;ID 17A;TO-220AB;PD 70W;gFS 12S

***itex: Transistor: N-MOSFET; unipolar; 100V; 17A; 0.09ohm; 70W; -55+175 deg.C; THT; TO220

***eco: Transistor MOSFET N Channel 100 Volt 17 Amp 3-Pin 3+ Tab TO-220AB

***ure Electronics: Single N-Channel 100 V 90 mOhm 37 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***p One Stop: Trans MOSFET N-CH Si 100V 17A 3-Pin(3+Tab) TO-220AB Tube

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:17A; On Resistance, Rds(on):90mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes

***roFlash: Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

***emi: N-Channel Power MOSFET, Logic Level, QFET®, 100 V, 12.8 A, 180 mΩ, TO-220

***et Europe: Trans MOSFET N-CH 100V 12.8A 3-Pin(3+Tab) TO-220AB Rail

***ure Electronics: N-Channel 100 V 0.18 Ohm Through Hole Mosfet - TO-220

*** Stop Electro: Power Field-Effect Transistor, 12.8A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N CH, 100V, 12.8A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 12.8A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.; Available until stocks are exhausted Alternative available

***ment14 APAC: MOSFET, N CH, 100V, 12.8A, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:12.8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.142ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:65W; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (07-Jul-2017)

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***emi: N-Channel Power MOSFET, QFET®, 100 V, 12.8 A, 180 mΩ, TO-220

***et Europe: Trans MOSFET N-CH 100V 12.8A 3-Pin(3+Tab) TO-220AB Rail

***ure Electronics: N-Channel 00 V 0.18 Ohm Through Hole Mosfet - TO-220

***nell: MOSFET, N-CH, 100V, 12.8A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 12.8A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.; Available until stocks are exhausted Alternative available

***r Electronics: Power Field-Effect Transistor, 12.8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***ark: N CH MOSFET, TRENCH AUTO, 100V, 75A, 3TO220AB; Transistor Polarity:N Channel; Co

***ical: Trans MOSFET N-CH 100V 23A Automotive 3-Pin(3+Tab) TO-220AB Tube

***peria: N-channel TrenchMOS standard level FET

*** Americas: STANDARD MARKING * HORIZONTAL, RAIL PACK

Market price

Part #	Mfg.	Description	Stock	Price
IRFB4212PBF DISTI # IRFB4212PBF-ND	Infineon Technologies AG	MOSFET N-CH 100V 18A TO-220AB RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call
IRFB4212PBF DISTI # 942-IRFB4212PBF	Infineon Technologies AG	MOSFET MOSFT 100V 18A 72.5mOhm 15nC Qg RoHS: Compliant	0
IRFB4212PBF DISTI # IRFB4212PBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,100V,18A,60W,TO220AB	35	1:$1.1200 3:$0.9700 10:$0.8900 100:$0.8400
IRFB4212PBF DISTI # IRFB4212PBF	Infineon Technologies AG	N-Ch 100V 18A 60W 0,0725R TO220AB RoHS: Compliant	40	10:€0.9760 50:€0.6760 200:€0.6160 500:€0.5930
IRFB4212PBF	International Rectifier	RoHS: Compliant	Europe - 950
IRFB4212PBF DISTI # 1436956	Infineon Technologies AG	MOSFET, N, 100V, TO-220AB RoHS: Compliant	0	1:$2.6700 10:$2.2000 100:$1.7800 500:$1.5900 1000:$1.4100 2500:$1.3100 5000:$1.2700 10000:$1.1900

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	Mfr.#: IRFB4127PBF,IRFB4127 OMO.#: OMO-IRFB4127PBF-IRFB4127-1190	New and Original
	Mfr.#: IRFB4227 OMO.#: OMO-IRFB4227-1190	New and Original
	Mfr.#: IRFB4310Z OMO.#: OMO-IRFB4310Z-1190	New and Original
	Mfr.#: IRFB4321GPBF,IRFB4321,IR OMO.#: OMO-IRFB4321GPBF-IRFB4321-IR-1190	New and Original
	Mfr.#: IRFB4410PBF0 OMO.#: OMO-IRFB4410PBF0-1190	New and Original
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Availability

Stock:: Available
On Order:: 3000
Enter Quantity:

Current price of IRFB4212PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.01~~; ~~$1.01~~

10: ~~$0.96~~; ~~$9.60~~

100: ~~$0.91~~; ~~$90.97~~

500: ~~$0.86~~; ~~$429.60~~

1000: ~~$0.81~~; ~~$808.60~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IRFB4212PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes