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IRFB4212PBF

P1-P3P4-P6P7-P8
www.irf.com 1
9/16/05
IRFB4212PbF
Notes through are on page 2
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
PD - 96918A
S
D
G
DIGITAL AUDIO MOSFET
TO-220AB
Features
• Key parameters optimized for Class-D audio
amplifier applications
• Low R
DSON
for improved efficiency
• Low Q
G
and Q
SW
for better THD and improved
efficiency
• Low Q
RR
for better THD and lower EMI
• 175°C operating junction temperature for
ruggedness
• Can deliver up to 150W per channel into 4Ω load in
half-bridge topology
V
DS
100 V
R
DS(ON)
typ. @ 10V
72.5
m:
Q
g
typ.
15 nC
Q
sw
typ.
8.3 nC
R
G(int)
typ.
2.2 Ω
T
J
max
175 °C
Key Parameters
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current c
P
D
@T
C
= 25°C
Power Dissipation f
W
P
D
@T
C
= 100°C
Power Dissipation f
Linear Derating Factor W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case f
––– 2.5
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient f
––– 62
Max.
13
57
±20
100
18
60
30
0.4
10lbxin (1.1Nxm)
-55 to + 175
300
IRFB4212PbF
2 www.irf.com
S
D
G
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.32mH, R
G
= 25Ω, I
AS
= 13A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
R
θ
is measured at T
J
of approximately 90°C.
Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive
avalanche information
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 100 ––– ––– V
∆Β
V
DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 0.09 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 58 72.5
m
Ω
V
GS(th)
Gate Threshold Voltage 3.0 ––– 5.0 V
∆V
GS(th)
/∆T
J
Gate Threshold Voltage Coefficient ––– -13 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 200 nA
Gate-to-Source Reverse Leakage ––– ––– -200
g
fs
Forward Transconductance 11 ––– ––– S
Q
g
Total Gate Charge ––– 15 23
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 3.3 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 1.4 ––– nC
Q
gd
Gate-to-Drain Charge ––– 6.9 –––
Q
godr
Gate Charge Overdrive ––– 3.4 ––– See Fig. 6 and 19
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 8.3 –––
R
G(int)
Internal Gate Resistance ––– 2.2 ––– Ω
t
d(on)
Turn-On Delay Time ––– 7.7 –––
t
r
Rise Time ––– 28 –––
t
d(off)
Turn-Off Delay Time ––– 14 ––– ns
t
f
Fall Time ––– 3.9 –––
C
iss
Input Capacitance ––– 550 –––
C
oss
Output Capacitance ––– 66 ––– pF
C
rss
Reverse Transfer Capacitance ––– 35 –––
C
oss
Effective Output Capacitance ––– 350 –––
L
D
Internal Drain Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 ––– from package
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
@ T
C
= 25°C
Continuous Source Current ––– ––– 18
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 57
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 41 62 ns
Q
rr
Reverse Recovery Charge ––– 69 100 nC
MOSFET symbol
R
G
= 2.5
Ω
V
DS
= 50V, I
D
= 13A
Conditions
and center of die contact
V
DD
= 50V, V
GS
= 10V
V
DS
= 80V
V
DS
= 50V
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 100V, V
GS
= 0V
V
GS
= 0V, V
DS
= 0V to 80V
V
DS
= 100V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
GS
= 10V
I
D
= 13A
V
GS
= 0V
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 13A
T
J
= 25°C, I
F
= 13A
di/dt = 100A/µs
T
J
= 25°C, I
S
= 13A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
I
D
= 13A
Typ. Max.
ƒ = 1.0MHz, See Fig.5
––– 25
See Fig. 14, 15, 17a, 17b
IRFB4212PbF
www.irf.com 3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤
60µs PULSE WIDTH
Tj = 25°C
6.0V
VGS
TOP 15V
12V
10V
9.0V
8.0V
7.0V
BOTTOM 6.0V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤
60µs PULSE WIDTH
Tj = 175°C
6.0V
VGS
TOP 15V
12V
10V
9.0V
8.0V
7.0V
BOTTOM 6.0V
2 4 6 8 10
V
GS
, Gate-to-Source Voltage (V)
0.1
1.0
10.0
100.0
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
V
DS
= 50V
≤
60µs PULSE WIDTH
T
J
= 25°C
T
J
= 175°C
1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0 5 10 15 20 25
Q
G
Total Gate Charge (nC)
0
4
8
12
16
20
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 80V
VDS= 50V
VDS= 20V
I
D
= 13A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
3.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 13A
V
GS
= 10V
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IRFB4212PBF

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Manufacturer:
Infineon Technologies
Description:
Darlington Transistors MOSFET MOSFT 100V 18A 72.5mOhm 15nC Qg
Lifecycle:
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