SI4174DY-T1-GE3

Mfr. #:: SI4174DY-T1-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 30V Vds 20V Vgs SO-8
Lifecycle:: New from this manufacturer.
Datasheet:: SI4174DY-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI4174DY-T1-GE3 Datasheet SI4174DY-T1-GE3 Datasheet (P4-P6)SI4174DY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
More Information:: SI4174DY-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SO-8

Tradename:: TrenchFET

Packaging:: Reel

Height:: 1.75 mm

Length:: 4.9 mm

Series:: SI4

Width:: 3.9 mm

Brand:: Vishay / Siliconix

Product Type:: MOSFET

Factory Pack Quantity:: 2500

Subcategory:: MOSFETs

Part # Aliases:: SI4174DY-GE3

Unit Weight:: 0.006596 oz

Tags: SI4174DY-T, SI4174, SI417, SI41, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4174DY-T1-GE3 Ratings and Reviews

V***i

Good quality board

2019-05-25

M***i

All OK

2019-02-20

G***o

The display is in order, in the work did not check, but everything is neat.Ordered 08.04, and received 16.06 in kazakhstan, with another track number, the seller did not make contact, only gave a link to the track on the old track. (all track was three)

2019-06-14

SI4174DY-T1-GE3 Description

***et Europe: Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R

***S.I.T. Europe - USA - Asia: Small Signal Field-Effect Transistor, 17A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ment14 APAC: MOSFET,N CH,30V,17A,SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.8mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Power Dissipation Pd:2.5W; Voltage Vgs Max:20V

SI4174DY-T1-GE3 More Information

TrenchFET® Gen III Power MOSFET: The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
SI4174DY-T1-GE3 DISTI # 33943416	Vishay Intertechnologies	Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R RoHS: Compliant	2500	2500:$0.2430
SI4174DY-T1-GE3 DISTI # SI4174DY-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 17A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	25000:$0.3015 12500:$0.3095 5000:$0.3214 2500:$0.3452
SI4174DY-T1-GE3 DISTI # SI4174DY-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 17A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2500In Stock	1000:$0.3923 500:$0.4904 100:$0.6203 10:$0.8090 1:$0.9200
SI4174DY-T1-GE3 DISTI # SI4174DY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 17A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2500In Stock	1000:$0.3923 500:$0.4904 100:$0.6203 10:$0.8090 1:$0.9200
SI4174DY-T1-GE3 DISTI # V36:1790_09215542	Vishay Intertechnologies	Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R RoHS: Compliant	0	2500000:$0.3136 1250000:$0.3138 250000:$0.3249 25000:$0.3423 2500:$0.3452
SI4174DY-T1-GE3 DISTI # V72:2272_09215542	Vishay Intertechnologies	Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R RoHS: Compliant	0
SI4174DY-T1-GE3 DISTI # SI4174DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4174DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.2939 15000:$0.3029 10000:$0.3109 5000:$0.3239 2500:$0.3339
SI4174DY-T1-GE3 DISTI # SI4174DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R (Alt: SI4174DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.2599 15000:€0.2789 10000:€0.3019 5000:€0.3509 2500:€0.5149
SI4174DY-T1-GE3 DISTI # SI4174DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R (Alt: SI4174DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI4174DY-T1-GE3 DISTI # 90R9128	Vishay Intertechnologies	MOSFET,N CHANNEL,30V,17A,SO8,Transistor Polarity:N Channel,Continuous Drain Current Id:17A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0078ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,No. of Pins:8Pins RoHS Compliant: Yes	0	1000:$0.3720 500:$0.4650 100:$0.5630 50:$0.6220 25:$0.6820 10:$0.7410 1:$0.9290
SI4174DY-T1-GE3 DISTI # 781-SI4174DY-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs SO-8 RoHS: Compliant	2777	1:$0.9100 10:$0.7330 100:$0.5560 500:$0.4600 1000:$0.3680 2500:$0.3330 5000:$0.3100 10000:$0.2990
SI4174DY-T1-GE3	Vishay Intertechnologies		10000
SI4174DY-T1-GE3 DISTI # SI4174DY-T1-GE3	Vishay Intertechnologies	Transistor: N-MOSFET,unipolar,30V,13.5A,3.2W,SO8	41	500:$0.3300 100:$0.3600 25:$0.3900 5:$0.4500 1:$0.6000
SI4174DYT1GE3	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 17A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant	2500
SI4174DY-T1-GE3 DISTI # SI4174DY-GE3	Vishay Intertechnologies	N-Ch 30V 17A 2,5W 0,0095R SO8 RoHS: Compliant	350	50:€0.3150 100:€0.2550 500:€0.2250 2500:€0.2180
SI4174DY-T1-GE3 DISTI # 1840422	Vishay Intertechnologies	MOSFET,N CH,30V,17A,SO8 RoHS: Compliant	0	1000:$0.5920 500:$0.7390 100:$0.9350 5:$1.2200
SI4174DY-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs SO-8	Americas -	2500:$0.3330 5000:$0.3150 10000:$0.3050 20000:$0.2980
SI4174DY-T1-GE3 DISTI # 1840422	Vishay Intertechnologies	MOSFET,N CH,30V,17A,SO8	0	500:£0.3550 250:£0.3920 100:£0.4290 10:£0.6190 1:£0.8100

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Availability

Stock:: Available
On Order:: 1500
Enter Quantity:

Current price of SI4174DY-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.91~~; ~~$0.91~~

10: ~~$0.73~~; ~~$7.33~~

100: ~~$0.56~~; ~~$55.60~~

500: ~~$0.46~~; ~~$230.00~~

1000: ~~$0.37~~; ~~$368.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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SI4174DY-T 3
SI4174 4
SI417 25
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