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FDU8882

FDU8882
Mfr. #:
FDU8882
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 30V 55A I-PAK
Lifecycle:
New from this manufacturer.
Datasheet:
FDU8882 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
FSC
Product Category
FETs - Single
Tags
FDU888, FDU88, FDU8, FDU
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***inecomponents.com
Trans MOSFET N-CH 30V 55A 3-Pin (3+Tab) TO-251 Rail
***ser
MOSFETs 30V,55A,11 OHM, NCH PWR TRENCH MOSFET
***ter Electronics
30V,55A,11 OHM, NCH, IPAK, POWER TRENCH MOSFET
***eco
003, PLASTIC MOLDED, TO-251 IPAK PKG, THRU-HOLE (39)<AZ
***i-Key
MOSFET N-CH 30V 55A I-PAK
***ark
MOSFET, N, I-PAK; Transistor type:MOSFET; Voltage, Vds typ:30V; Current, Id cont:55A; Resistance, Rds on:0.0115ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:2.5V; Case style:I-PAK (TO-251); Case style, RoHS Compliant: Yes
***nell
MOSFET, N, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:55A; Resistance, Rds On:0.0115ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.5V; Case Style:I-PAK; Termination Type:Through Hole; Alternate Case Style:TO-251; Current, Idm Pulse:50A; Lead Length:9.8mm; Lead Spacing:2.285mm; Power, Pd:55W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, trr Typ:82ns; Transistors, No. of:1; Voltage, Rds Measurement:10V; Voltage, Vds Max:30V
***ment14 APAC
MOSFET, N, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Transistor Case Style:I-PAK; SVHC:No SVHC (15-Dec-2010); Alternate Case Style:TO-251; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Length:9.8mm; Lead Spacing:2.285mm; No. of Transistors:1; Package / Case:IPAK; Power Dissipation Pd:55W; Pulse Current Idm:50A; Reverse Recovery Time trr Typ:82ns; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V
Part # Mfg. Description Stock Price
FDU8882
DISTI # FDU8882-ND		ON SemiconductorMOSFET N-CH 30V 55A I-PAK
RoHS: Compliant
Min Qty: 1800
Container: Tube		Limited Supply - Call
    FDU8882
    DISTI # 512-FDU8882    		ON SemiconductorMOSFET 30V 55A 11 OHM NCH PWR TRENCH MOSFET
    RoHS: Compliant    		0
      FDU8882Fairchild Semiconductor CorporationPower Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
      RoHS: Compliant      		518
      • 1000:$0.5000
      • 500:$0.5300
      • 100:$0.5500
      • 25:$0.5700
      • 1:$0.6200
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      Availability
      Stock:
      Available
      On Order:
      3000
      Enter Quantity:
      Current price of FDU8882 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $0.75
      $0.75
      10
      $0.71
      $7.12
      100
      $0.68
      $67.50
      500
      $0.64
      $318.75
      1000
      $0.60
      $600.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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