SI7922DN-T1-E3

Mfr. #:: SI7922DN-T1-E3
Manufacturer:: Vishay
Description:: IGBT Transistors MOSFET DUAL N-CH 100V (D-S)
Lifecycle:: New from this manufacturer.
Datasheet:: SI7922DN-T1-E3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: SI7922DN-T1-E3 more Information

Product Attribute
Attribute Value

Manufacturer: VISHAY

Product Category: FETs - Arrays

Series: TrenchFETR

Packaging: Digi-ReelR Alternate Packaging

Part-Aliases: SI7922DN-T1

Mounting-Style: SMD/SMT

Package-Case: PowerPAKR 1212-8 Dual

Technology: Si

Operating-Temperature: -55°C ~ 150°C (TJ)

Mounting-Type: Surface Mount

Number-of-Channels: 2 Channel

Supplier-Device-Package: PowerPAKR 1212-8 Dual

Configuration: Dual

FET-Type: 2 N-Channel (Dual)

Power-Max: 1.3W

Transistor-Type: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 100V

Input-Capacitance-Ciss-Vds: -

FET-Feature: Logic Level Gate

Current-Continuous-Drain-Id-25°C: 1.8A

Rds-On-Max-Id-Vgs: 195 mOhm @ 2.5A, 10V

Vgs-th-Max-Id: 3.5V @ 250μA

Gate-Charge-Qg-Vgs: 8nC @ 10V

Pd-Power-Dissipation: 1.3 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 11 ns

Rise-Time: 11 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuous-Drain-Current: 1.8 A

Vds-Drain-Source-Breakdown-Voltage: 100 V

Rds-On-Drain-Source-Resistance: 195 mOhms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 8 ns

Typical-Turn-On-Delay-Time: 7 ns

Channel-Mode: Enhancement

Tags: SI7922DN-T, SI7922D, SI7922, SI792, SI79, SI7

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7922DN-T1-E3 More Information

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

Part #	Mfg.	Description	Stock	Price
SI7922DN-T1-E3 DISTI # SI7922DN-T1-E3TR-ND	Vishay Siliconix	MOSFET 2N-CH 100V 1.8A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.8465
SI7922DN-T1-E3 DISTI # SI7922DN-T1-E3CT-ND	Vishay Siliconix	MOSFET 2N-CH 100V 1.8A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.9364 500:$1.1302 100:$1.4531 10:$1.8080 1:$2.0000
SI7922DN-T1-E3 DISTI # SI7922DN-T1-E3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 100V 1.8A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.9364 500:$1.1302 100:$1.4531 10:$1.8080 1:$2.0000
SI7922DN-T1-E3 DISTI # SI7922DN-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.8A 8-Pin PowerPAK 1212 T/R (Alt: SI7922DN-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€1.5849 6000:€1.1108 12000:€0.9159 18000:€0.8129 30000:€0.7689
SI7922DN-T1-E3 DISTI # SI7922DN-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.8A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7922DN-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.8289 6000:$0.8049 12000:$0.7719 18000:$0.7499 30000:$0.7299
SI7922DN-T1-E3 DISTI # 06J8182	Vishay Intertechnologies	DUAL N CHANNEL MOSFET, 100V, POWERPAK,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:2.5A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.162ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V , RoHS Compliant: Yes	0	1:$1.7800 25:$1.4800 50:$1.3100 100:$1.1400 250:$1.0700 500:$0.9980 1000:$0.8270
SI7922DN-T1-E3 DISTI # 73W9421	Vishay Intertechnologies	MOSFET, DUAL N CHANNEL, 100V, 0.162OHM, 1.8A, POWERPAK, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.162ohm,Rds(on) Test Voltage Vgs:10V , RoHS Compliant: Yes	0	1:$0.8440 3000:$0.8380 6000:$0.7980 12000:$0.7070
SI7922DN-T1-E3 DISTI # 70026293	Vishay Siliconix	SI7922DN-T1-E3 Dual N-channel MOSFET Module,1.8 A,100 V,8-Pin PowerPAK 1212 RoHS: Compliant	0	3000:$0.9300 6000:$0.9200 9000:$0.8700
SI7922DN-T1-E3 DISTI # 781-SI7922DN-T1-E3	Vishay Intertechnologies	MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant	0	1:$1.7800 10:$1.4800 100:$1.1400 500:$0.9980 1000:$0.8270 3000:$0.7700
SI7922DN-T1-E3	Vishay Intertechnologies		145
SI7922DN-T1-E3	Vishay Intertechnologies	MOSFET 100V Vds 20V Vgs PowerPAK 1212-8	Americas -	3000:$0.7680 6000:$0.7180 12000:$0.6910
SI7922DN-T1-E3 DISTI # 1189340	Vishay Intertechnologies	DUAL N CH MOSFET, 100V, POWERPAK RoHS: Compliant	0	3000:£0.7270

Image	Part #	Description
	Mfr.#: SI7922DN-T1-E3 OMO.#: OMO-SI7922DN-T1-E3	MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
	Mfr.#: SI7922DN-T1-GE3 OMO.#: OMO-SI7922DN-T1-GE3	MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
	Mfr.#: SI7922DN-T1-GE3 OMO.#: OMO-SI7922DN-T1-GE3-VISHAY	IGBT Transistors MOSFET Dual N-Ch 100V 195 mohm @ 4.5V
	Mfr.#: SI7922DN-T1-E3 OMO.#: OMO-SI7922DN-T1-E3-VISHAY	IGBT Transistors MOSFET DUAL N-CH 100V (D-S)
	Mfr.#: SI7922DN-T1-E3-CUT TAPE OMO.#: OMO-SI7922DN-T1-E3-CUT-TAPE-1190	New and Original
	Mfr.#: SI7922DN OMO.#: OMO-SI7922DN-1190	MOSFET, DUAL, NN, POWERPAK
	Mfr.#: SI7922DN-T1 OMO.#: OMO-SI7922DN-T1-1190	MOSFET Transistor, Matched Pair, N-Channel, LLCC

SI7922DN-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes