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IXFP4N60P3

IXFP4N60P3
Mfr. #:
IXFP4N60P3
Manufacturer:
Littelfuse
Description:
MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode
Lifecycle:
New from this manufacturer.
Datasheet:
IXFP4N60P3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFP4N60P3 DatasheetIXFP4N60P3 Datasheet (P4-P6)
ECAD Model:
More Information:
IXFP4N60P3 more Information
Product Attribute
Attribute Value
Manufacturer:
IXYS
Product Category:
MOSFET
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
4 A
Rds On - Drain-Source Resistance:
2.2 Ohms
Tradename:
HiPerFET
Packaging:
Tube
Series:
IXFP4N60
Brand:
IXYS
Product Type:
MOSFET
Factory Pack Quantity:
50
Subcategory:
MOSFETs
Unit Weight:
0.012346 oz
Tags
IXFP4N, IXFP4, IXFP, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Electronics
MOSFET N-CH 600V 4A TO-220AB
***el Nordic
Contact for details
***emi
Power MOSFET, N-Channel, QFET®, 600 V, 4.5 A, 2.5 Ω, TO-220
***et Europe
Trans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
N-Channel 600 V 2.5 Ohm Through Hole Mosfet - TO-220
***ment14 APAC
N CHANNEL MOSFET, 600V, 4.5A TO-220; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Source Voltage Vds:600V; On
***r Electronics
Power Field-Effect Transistor, 4.5A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***ure Electronics
IRFBC30A Series N-Channel 600 V 2.2 Ohm Flange Mount Power Mosfet - TO-220AB
***ical
Trans MOSFET N-CH 600V 3.6A 3-Pin(3+Tab) TO-220AB
***el Electronic
1.2A High Power White LED Driver with I2C Compatible Interface 12-DSBGA -40 to 85
***nell
MOSFET, N, 600V, 3.6A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 2.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power
***et
Trans MOSFET N-CH 600V 3A 3-Pin(3+Tab) TO-220AB Rail
***nell
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 2.8ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd: 75W;
***ark
MOSFET, N TO-220MOSFET, N TO-220; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:600V; Case style:TO-220; Current, Id cont:3A; Current, Idm pulse:12A; Power, Pd:75W; Resistance, Rds on:2.8R; Length / Height, RoHS Compliant: Yes
***(Formerly Allied Electronics)
IRFBC30PBF N-channel MOSFET Transistor, 3.6 A, 600 V, 3-Pin TO-220AB
***ure Electronics
Single N-Channel 600 V 2.2 Ohms Flange Mount Power Mosfet - TO-220AB
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: TO-220 Polarity: N Power dissipation: 74 W
***ical
Trans MOSFET N-CH 600V 3.6A 3-Pin(3+Tab) TO-220AB
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 2.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation P
***emi
Power MOSFET, N-Channel, QFET®, 600 V, 3 A, 3.4 Ω, TO-220
***ark
TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,3A I(D),TO-220AB ROHS COMPLIANT: YES
***Yang
Trans MOSFET N-CH 600V 3A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***ure Electronics
N-Channel 600 V 3.4 Ohm Flange Mount Mosfet - TO-220
***enic
600V 3A 75W 3.4´Î@10V1.5A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 3A I(D), 600V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***(Formerly Allied Electronics)
IRF830APBF N-channel MOSFET Transistor; 5 A; 500 V; 3-Pin TO-220AB
***ure Electronics
Single N-Channel 500 V 1.4 Ohms Flange Mount Power Mosfet - TO-220-3
*** Source Electronics
Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220AB / MOSFET N-CH 500V 5A TO-220AB
***enic
500V 5A 1.4¦¸@10V,3A 74W 4.5V@250¦ÌA N Channel TO-220(TO-220-3) MOSFETs ROHS
***nsix Microsemi
Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, 500V, 5A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.5V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:5A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.7°C/W; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:74W; Power Dissipation Pd:74W; Pulse Current Idm:20A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Part # Mfg. Description Stock Price
IXFP4N60P3
DISTI # IXFP4N60P3-ND		IXYS CorporationMOSFET N-CH 600V 4A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		25In Stock
  • 2500:$0.7560
  • 500:$0.9450
  • 100:$1.2150
  • 50:$1.3500
  • 10:$1.5120
  • 1:$1.6700
IXFP4N60P3
DISTI # 747-IXFP4N60P3		IXYS CorporationMOSFET Polar3 HiPerFETs MOSFET w/Fast Diode64
  • 1:$1.9200
  • 10:$1.7400
  • 25:$1.5100
  • 50:$1.4200
  • 100:$1.4000
  • 250:$1.1300
  • 500:$1.0900
  • 1000:$0.9010
  • 2500:$0.7560
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Availability
Stock:
64
On Order:
2047
Enter Quantity:
Current price of IXFP4N60P3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.92
$1.92
10
$1.74
$17.40
25
$1.51
$37.75
50
$1.42
$71.00
100
$1.40
$140.00
250
$1.13
$282.50
500
$1.09
$545.00
1000
$0.90
$900.00
2500
$0.76
$1 887.50
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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