BTS132E3045ANTMA1

Mfr. #:: BTS132E3045ANTMA1
Manufacturer:: Rochester Electronics, LLC
Description:: Trans MOSFET N-CH 60V 24A 3-Pin TO-220AB T/R - Bulk (Alt: BTS132E3045ANTMA1)
Lifecycle:: New from this manufacturer.
Datasheet:: BTS132E3045ANTMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Tags: BTS132E304, BTS132E30, BTS132E, BTS132, BTS13, BTS1, BTS

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email us if you have excess stock to sell.

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BTS132E3045ANTMA1 Description

***et: Trans MOSFET N-CH 60V 24A 3-Pin TO-220AB T/R

***i-Key: N-CHANNEL POWER MOSFET

***et: Trans MOSFET N-CH 50V 25A 3-Pin(2+Tab) TO-220AB SMD T/R

***el Electronic: Power Field-Effect Transistor, 25A I(D), 50V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

***i-Key: N-CHANNEL POWER MOSFET

***emi: Single P-Channel Power MOSFET -20V, -3A, 83mΩ

***et: Trans MOSFET P-CH 20V 3A 3-Pin SOT-323 T/R

***r Electronics: Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

***enic: 20V 3A 63m´Î@4.5V1.5A 1W 58pF@10V P Channel 375pF@10V 4.6nC@4.5V -55¡Í~+150¡Í@(Tj) MCPH-3 MOSFETs ROHS

***el Electronic: RES SMD 32.4K OHM 1% 1/2W 1206

***ark: MOSFET, P-CH, -20V, -3A, SOT-323; Channel Type:P Channel; Drain Source Voltage Vds:-20V; Continuous Drain Current Id:-3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:-4.5V; Gate Source Threshold Voltage Max:-1.3V RoHS Compliant: Yes

***ure Electronics: MCH6660 Series 20 V 136 mOhm 2A/1.5A N/P-Ch Power Mosfet - MCPH6

***r Electronics: Small Signal Field-Effect Transistor, 2A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: Mosfet, N & P-Ch, 20V, 2A, Sot-363; Channel Type:complementary N And P Channel; Drain Source Voltage Vds N Channel:20V; Drain Source Voltage Vds P Channel:20V; Continuous Drain Current Id N Channel:2A; No. Of Pins:6Pins Rohs Compliant: Yes

***nell: MOSFET, N & P-CH, 20V, 2A, SOT-363; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 2A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.105ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1.3V; Power Dissipation Pd: 800mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***emi: Single P-Channel Power MOSFET, -30V, -2.0A, 215mΩ

***et: Trans MOSFET P-CH 30V 2A 3-Pin SC-70FL T/R

***ure Electronics: -30V, -2A, 215mohm, Power Mosfet, P-Channel, SC-70FL

*** Stop Electro: Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

***enic: 30V 2A 215m´Î@1V1A 900mW 1.3V@1mA P Channel SC-70FL MOSFETs ROHS

***ment14 APAC: MOSFET, P-CH, -30V, -2A, SC-70-3

***i-Key: MOSFET P-CH 30V 2A SC70FL/MCPH3

***ark: Mosfet, P-Ch, -30V, -2A, Sc-70-3; Transistor Polarity:p Channel; Drain Source Voltage Vds:-30V; Continuous Drain Current Id:-2A; On Resistance Rds(On):0.165Ohm; Rds(On) Test Voltage Vgs:-4V; Threshold Voltage Vgs:-1.3V Rohs Compliant: Yes

***et: Trans MOSFET N-CH 60V 27A 3-Pin TO-220AB T/R

***el Electronic: Power Field-Effect Transistor, 27A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

***i-Key: N-CHANNEL POWER MOSFET

***(Formerly Allied Electronics): SI5935CDC-T1-GE3 Dual P-channel MOSFET Transistor; 3.8 A; 20V; 8-Pin 1206 ChipFET

***ure Electronics: Dual P-Channel 20 V 100 mO 11 nC Surface Mount Mosfet - 1206-8 ChipFET

***et Europe: Transistor MOSFET Array Dual P-CH 20V 4A 8-Pin Chip FET T/R

***ark: Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4A; On Resistance Rds(On):0.083Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V Rohs Compliant: No

Market price

Part #	Mfg.	Description	Stock	Price
BTS132E3045ANTMA1 DISTI # BTS132E3045ANTMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 24A 3-Pin TO-220AB T/R - Bulk (Alt: BTS132E3045ANTMA1) Min Qty: 86 Container: Bulk	Americas - 0	860:$3.6900 430:$3.7900 258:$3.8900 172:$3.9900 86:$4.1900
BTS132 E3045A DISTI # 726-BTS132E3045A	Infineon Technologies AG	MOSFET N-Ch 60V 6.7A TO220-3 RoHS: Not compliant	0
BTS132E3045ANTMA1	Infineon Technologies AG	Power Field-Effect Transistor, 24A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant	13000	1000:$3.8700 500:$4.0700 100:$4.2400 25:$4.4200 1:$4.7600

Related products

Image	Part #	Description
	Mfr.#: BTS132E3045A OMO.#: OMO-BTS132E3045A-1190	New and Original
	Mfr.#: BTS132E3045ANTMA1 OMO.#: OMO-BTS132E3045ANTMA1-1190	Trans MOSFET N-CH 60V 24A 3-Pin TO-220AB T/R - Bulk (Alt: BTS132E3045ANTMA1)
	Mfr.#: BTS132E3064 OMO.#: OMO-BTS132E3064-1190	New and Original
	Mfr.#: BTS132E3129NKSA1 OMO.#: OMO-BTS132E3129NKSA1-1190	- Bulk (Alt: BTS132E3129NKSA1)

Availability

Stock:: Available
On Order:: 5000
Enter Quantity:

Current price of BTS132E3045ANTMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$5.80~~; ~~$5.80~~

10: ~~$5.51~~; ~~$55.15~~

100: ~~$5.22~~; ~~$522.45~~

500: ~~$4.93~~; ~~$2 467.15~~

1000: ~~$4.64~~; ~~$4 644.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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BTS132E3045ANTMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes