IXGR40N120B2D1

Mfr. #:: IXGR40N120B2D1
Manufacturer:: IXYS
Description:: IGBT 1200V ISOPLUS247
Lifecycle:: New from this manufacturer.
Datasheet:: IXGR40N120B2D1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Tags: IXGR40, IXGR4, IXGR, IXG

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IXGR40N120B2D1 Description

***i-Key: IGBT 1200V ISOPLUS247

***p One Stop Global: Trans IGBT Chip N-CH 1200V 41A 160000mW 3-Pin(3+Tab) TO-247AC Tube

***ure Electronics: IRG4PH40U Series 1200 V 21 A N-Channel UltraFast Speed IGBT - TO-247AC

***ineon SCT: 1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.43 V Current release time: 180 ns Power dissipation: 160 W

***ment14 APAC: IGBT, 1200V, 30A, TO-247AC; Transistor Type:IGBT; DC Collector Current:41A; Collector Emitter Voltage Vces:3.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; Current Ic Continuous a Max:30A; Current Temperature:25°C; Device Marking:IRG4PH40U; Fall Time Max:190ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:120A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

***(Formerly Allied Electronics): Transistor; IGBT; TO-247AC; 45 A (Max.); 1200 V (Min.); 200 W (Max.); -55 degC

***p One Stop Global: Trans IGBT Chip N-CH 1200V 45A 200000mW 3-Pin(3+Tab) TO-247AC Tube

***ure Electronics: IRG4PH50U Series N-Channel 1.2 kV 45 A Ultrafast Speed IGBT - TO-247AC

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.78 V Current release time: 280 ns Power dissipation: 200 W

***ment14 APAC: SINGLE IGBT, 1.2KV, 45A; Transistor Type; Transistor Type:IGBT; DC Collector Current:45A; Collector Emitter Voltage Vces:3.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:45A; Current Temperature:25°C; Fall Time Max:500ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:180A; Rise Time:15ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

***p One Stop: Trans IGBT Chip N-CH 1200V 57A 200000mW 3-Pin(3+Tab) TO-247AC Tube

***ure Electronics: IRG4PH50S Series 1200 V 57 A N-Channel Standard Speed IGBT - TO-247AC

***ineon SCT: 1200V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package, TO247-3, RoHS

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 1.7 V Current release time: 1000 ns Power dissipation: 200 W

***ment14 APAC: IGBT, 1200V, 57A, TO-247AC; Transistor Type:IGBT; DC Collector Current:57A; Collector Emitter Voltage Vces:1.47V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:57A; Current Temperature:25°C; Device Marking:IRG4PH50S; Fall Time Max:638ns; Full Power Rating Temperature:25°C; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:114A; Rise Time:29ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

***ical: Trans IGBT Chip N-CH 1200V 64A 500000mW 3-Pin(3+Tab) TO-264 Rail

***ure Electronics: FGL40N120AND Series 1200 V 64 A Flange Mount NPT IGBT - TO-264

***nell: IGBT,N CH,FAST,W/DIO,1200V,64A,TO264; Transistor Type: IGBT; DC Collector Current: 64A; Collector Emitter Voltage Vces: 1.2kV; Power Dissipation Pd: 500W; Collector Emitter Voltage V(br); Available until stocks are exhausted

***rchild Semiconductor: Employing NPT technology, Fairchild's AN series of IGBT provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).

***ical: Trans IGBT Chip N-CH 1200V 6A 25000mW 3-Pin(3+Tab) TO-220FP Tube

***icroelectronics: 7 A, 1200 V very fast IGBT with Ultrafast diode

***r Electronics: Insulated Gate Bipolar Transistor, 6A I(C), 1200V V(BR)CES, N-Channel, TO-220AB

***el Electronic: STMICROELECTRONICS - STGF3NC120HD - IGBT, N 1200V 3A TO-220FP

***nell: IGBT, N 1200V 3A TO-220FP; DC Collector Current: 6A; Collector Emitter Saturation Voltage Vce(on): 2.8V; Power Dissipation Pd: 25W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-220FP; No. of Pins: 3Pins

***ical: Trans IGBT Chip N=-CH 1200V 50A 312000mW 3-Pin(3+Tab) TO-3PN Rail

***eco: Transistor IGBT Chip N Channel 1.2k Volt 50 Amp 3-Pin 3+ Tab TO-3PN Rail

***ure Electronics: FGA25N120ANTD Series 1200 V 50 A Flange Mont NPT Trench IGBT - TO-3PN

***el Electronic: In a Pack of 2, ON Semiconductor FGA25N120ANTDTU IGBT, 50 A 1200 V, 3-Pin TO-3P

***ment14 APAC: IGBT, NPT, TO-3PN; DC Collector Current:50A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:312mW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-3PN; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:50A; Package / Case:TO-3PN; Power Dissipation Max:312W; Power Dissipation Pd:312mW; Pulsed Current Icm:90A; Rise Time:60ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

***th Star Micro: Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.

Market price

Part #	Mfg.	Description	Stock	Price
IXGR40N120B2D1 DISTI # IXGR40N120B2D1-ND	IXYS Corporation	IGBT 1200V ISOPLUS247 RoHS: Compliant Min Qty: 30 Container: Tube	Temporarily Out of Stock	30:$13.2090

Related products

Image	Part #	Description
	Mfr.#: IXGR40N60C2 OMO.#: OMO-IXGR40N60C2-IXYS-CORPORATION	IGBT 600V 56A 170W ISOPLUS247
	Mfr.#: IXGR40N60C2D1 OMO.#: OMO-IXGR40N60C2D1-IXYS-CORPORATION	IGBT 600V 56A 170W ISOPLUS247
	Mfr.#: IXGR40N60CD1 OMO.#: OMO-IXGR40N60CD1-IXYS-CORPORATION	IGBT 600V 75A 200W ISOPLUS247
	Mfr.#: IXGR40N60CDI OMO.#: OMO-IXGR40N60CDI-1190	New and Original
	Mfr.#: IXGR40N60B OMO.#: OMO-IXGR40N60B-IXYS-CORPORATION	IGBT 600V 70A 200W ISOPLUS247
	Mfr.#: IXGR40N60B2 OMO.#: OMO-IXGR40N60B2-IXYS-CORPORATION	IGBT 600V 60A 167W ISOPLUS247
	Mfr.#: IXGR40N60BD1 OMO.#: OMO-IXGR40N60BD1-IXYS-CORPORATION	IGBT 600V 70A 200W ISOPLUS247
	Mfr.#: IXGR40N120A2D1 OMO.#: OMO-IXGR40N120A2D1-IXYS-CORPORATION	IGBT 1200V ISOPLUS247
	Mfr.#: IXGR40N120B2D1 OMO.#: OMO-IXGR40N120B2D1-IXYS-CORPORATION	IGBT 1200V ISOPLUS247
	Mfr.#: IXGR40N60B2D1 OMO.#: OMO-IXGR40N60B2D1-IXYS-CORPORATION	IGBT 600V 60A 167W ISOPLUS247

Availability

Stock:: Available
On Order:: 3000
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Current price of IXGR40N120B2D1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.00~~; ~~$0.00~~

10: ~~$0.00~~; ~~$0.00~~

100: ~~$0.00~~; ~~$0.00~~

500: ~~$0.00~~; ~~$0.00~~

1000: ~~$0.00~~; ~~$0.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IXGR40N120B2D1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes