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IPSA70R2K0P7SAKMA1

IPSA70R2K0P7SAKMA1
Mfr. #:
IPSA70R2K0P7SAKMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET CONSUMER
Lifecycle:
New from this manufacturer.
Datasheet:
IPSA70R2K0P7SAKMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPSA70R2K0P7SAKMA1 Datasheet
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
PG-TO-251-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
700 V
Id - Continuous Drain Current:
3 A
Rds On - Drain-Source Resistance:
1.64 Ohms
Vgs th - Gate-Source Threshold Voltage:
2.5 V
Vgs - Gate-Source Voltage:
16 V
Qg - Gate Charge:
3.8 nC
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
17.6 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Transistor Type:
1 N-Channel
Brand:
Infineon Technologies
Fall Time:
70 ns
Product Type:
MOSFET
Rise Time:
5.5 ns
Factory Pack Quantity:
1500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
60 ns
Typical Turn-On Delay Time:
12 ns
Part # Aliases:
IPSA70R2K0P7S SP001664770
Tags
IPSA7, IPSA, IPS
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 700V 3A 3-Pin TO-251 Tube
***i-Key
MOSFET TO251-3
***ark
Mosfet, N-Ch, 700V, 3A, To-251; Transistor Polarity:n Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:700V; On Resistance Rds(On):1.64Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 700V, 3A, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:700V; On Resistance Rds(on):1.64ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:17.6W; Transistor Case Style:TO-251; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, N-CH, 700V, 3A, TO-251; Polarità Transistor:Canale N; Corrente Continua di Drain Id:3A; Tensione Drain Source Vds:700V; Resistenza di Attivazione Rds(on):1.64ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:17.6W; Modello Case Transistor:TO-251; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Summary of Features: Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off; Highly performant technology Low switching losses (E oss) Highly efficient Excellent thermal behavior; Allowing high speed switching; Integrated protection Zener diode; Optimized V (GS)th of 3V with very narrow tolerance of 0.5V; Finely graduated portfolio | Benefits: Cost competitive technology; Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology; Further efficiency gain at higher switching speed; Supporting less magnetic size with lower BOM costs; High ESD ruggedness up to HBM Class 2 level; Easy to drive and design-in; Enabler for smaller form factors and high power density designs; Excellent choice in selecting the best fitting product | Target Applications: Charger; Adapter; TV; Lighting; Audio; Aux power
Part # Mfg. Description Stock Price
IPSA70R2K0P7SAKMA1
DISTI # V99:2348_18786382		Infineon Technologies AGCONSUMER0
  • 1500000:$0.1696
  • 750000:$0.1701
  • 150000:$0.2465
  • 15000:$0.4068
  • 1500:$0.4350
IPSA70R2K0P7SAKMA1
DISTI # IPSA70R2K0P7SAKMA1-ND		Infineon Technologies AGMOSFET TO251-3
RoHS: Compliant
Min Qty: 1
Container: Tube		442In Stock
  • 6000:$0.2061
  • 3000:$0.2204
  • 1500:$0.2417
  • 100:$0.3981
  • 25:$0.4976
  • 10:$0.5330
  • 1:$0.6200
IPSA70R2K0P7SAKMA1
DISTI # IPSA70R2K0P7SAKMA1		Infineon Technologies AGTrans MOSFET N-CH 700V 3A 3-Pin TO-251 Tube - Rail/Tube (Alt: IPSA70R2K0P7SAKMA1)
RoHS: Compliant
Min Qty: 3000
Container: Tube		Americas - 0
  • 30000:$0.1719
  • 15000:$0.1749
  • 9000:$0.1809
  • 6000:$0.1879
  • 3000:$0.1949
IPSA70R2K0P7SAKMA1
DISTI # SP001664770		Infineon Technologies AGTrans MOSFET N-CH 700V 3A 3-Pin TO-251 Tube (Alt: SP001664770)
RoHS: Compliant
Min Qty: 75
Container: Tube		Europe - 0
  • 750:€0.1869
  • 450:€0.2009
  • 300:€0.2239
  • 150:€0.2509
  • 75:€0.2959
IPSA70R2K0P7SAKMA1
DISTI # 49AC8007		Infineon Technologies AGMOSFET, N-CH, 700V, 3A, TO-251,Transistor Polarity:N Channel,Continuous Drain Current Id:3A,Drain Source Voltage Vds:700V,On Resistance Rds(on):1.64ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes320
  • 10000:$0.2110
  • 2500:$0.2240
  • 1000:$0.2570
  • 500:$0.2900
  • 100:$0.3230
  • 10:$0.5120
  • 1:$0.6100
IPSA70R2K0P7SAKMA1
DISTI # 726-IPSA70R2K0P7SAKM		Infineon Technologies AGMOSFET CONSUMER
RoHS: Compliant		291
  • 1:$0.5900
  • 10:$0.4890
  • 100:$0.2980
  • 1000:$0.2310
IPSA70R2K0P7SAKMA1
DISTI # 2843150		Infineon Technologies AGMOSFET, N-CH, 700V, 3A, TO-251330
  • 500:£0.1950
  • 250:£0.2120
  • 100:£0.2290
  • 25:£0.3980
  • 5:£0.4260
IPSA70R2K0P7SAKMA1
DISTI # 2843150		Infineon Technologies AGMOSFET, N-CH, 700V, 3A, TO-251
RoHS: Compliant		320
  • 6000:$0.3110
  • 3000:$0.3330
  • 1500:$0.3650
  • 100:$0.6000
  • 25:$0.7500
  • 5:$0.8030
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Availability
Stock:
291
On Order:
2274
Enter Quantity:
Current price of IPSA70R2K0P7SAKMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.59
$0.59
10
$0.49
$4.89
100
$0.30
$29.80
1000
$0.23
$231.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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