IPSA70R2K0P7SAKMA1

Product brief
700 V CoolMOS™ P7 series
Infineon’s answer for flyback topologies
Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the
new 700 V CoolMOS™ P7 series addresses the low power SMPS market, such as mobile
phone chargers or notebook adapters by oering fundamental performance gains
compared to superjunction technologies used today.
By combining customers’ feedback with over 20 years of superjunction MOSFET
experience, 700 V CoolMOS™ P7 enables best fit for target applications in terms of:
Eiciency and thermals
Ease-of-use
EMI behavior
The new CoolMOS™ P7 oers 27 percent to 50 percent lower switching losses (E
OSS
),
up to 3.9 percent higher eiciency and impressively up to 16 K lower device temperature
against competition. Compared to previous 650 V CoolMOS™ C6 technology it oers
2.4 percent gain in eiciency and 12 K lower device temperature, measured at a flyback
based charger application, operated at 140 kHz switching speed.
To increase the ESD ruggedness up to HBM Class 2 level, 700 V CoolMOS™ P7 comes with
an integrated Zener diode. This helps to support increased assembly yield, leads to less
production related failures and finally manufacturing cost savings on customer side.
Keeping the ease-of-use in mind, the technology has been developed with an excellent
V
GS(th)
of 3 V and narrow tolerance of ±0.5 V. This makes the P7 easy to design-in and
enables the usage of lower gate source voltage, which makes it easier to drive and leads
to less idle losses.
Extremely low FOM R
DS(on)
x E
oss
;
lower Q
g
, E
on
and E
o
Highly performant technology
Low switching losses (E
OSS
)
Highly eicient
Excellent thermal behavior
Allowing high speed switching
Integrated protection Zener diode
Optimized V
GS(th)
of 3 V with very nar-
row tolerance of ±0.5 V
Finely graduated portfolio
Cost competitive technology
Up to 2.4 percent eiciency gain
and 12 K lower device temperature
compared to C6 technology
Further eiciency gain at higher
switching speed
Supporting less magnetic size with
lower BOM costs
High ESD ruggedness up to HBM
Class 2 level
Easy to drive and design-in
Enabler for smaller form factors and
high power density designs
Excellent choice in selecting the best
fitting product
Key features
Key benefits
www.infineon.com/700V-p7
Charger
P7
Competitor A Competitor B
Switching losses (E
OSS
)
0 100 200 300 400
V
DS
[V]
E
OSS
[µJ]
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50%
27%
Product brief
Published by
Infineon Technologies Austria AG
9500 Villach, Austria
© 2017 Infineon Technologies AG.
All Rights Reserved.
Order Number: B152-I0566-V1-7600-EU-EC
Date: 12 / 2017
Please note!
THIS DOCUMENT IS FOR INFORMATION PURPOSES ONLY AND
ANY INFORMATION GIVEN HEREIN SHALL IN NO EVENT BE
REGARDED AS A WARRANTY, GUARANTEE OR DESCRIPTION OF
ANY FUNCTIONALITY, CONDITIONS AND/OR QUALITY OF OUR
PRODUCTS OR ANY SUITABILITY FOR A PARTICULAR PURPOSE.
WITH REGARD TO THE TECHNICAL SPECIFICATIONS OF OUR
PRODUCTS, WE KINDLY ASK YOU TO REFER TO THE RELEVANT
PRODUCT DATA SHEETS PROVIDED BY US. OUR CUSTOMERS AND
THEIR TECHNICAL DEPARTMENTS ARE REQUIRED TO EVALUATE
THE SUITABILITY OF OUR PRODUCTS FOR THE INTENDED
APPLICATION.
WE RESERVE THE RIGHT TO CHANGE THIS DOCUMENT AND/OR
THE INFORMATION GIVEN HEREIN AT ANY TIME.
Additional information
For further information on technologies, our products, the
application of our products, delivery terms and conditions
and/or prices, please contact your nearest Infineon Technologies
oice (www.infineon.com).
Warnings
Due to technical requirements, our products may contain
dangerous substances. For information on the types in question,
please contact your nearest Infineon Technologies oice.
Except as otherwise explicitly approved by us in a written
document signed by authorized representatives of Infineon
Technologies, our products may not be used in any life-
endangering applications, including but not limited to medical,
nuclear, military, life-critical or any other applications where a
failure of the product or any consequences of the use thereof can
result in personal injury.
700 V CoolMOS™ P7 series
Infineon’s answer for flyback topologies
Plug-and-play benchmarking at a high-end 12 W charger application
700 V CoolMOS™ P7 convinces with outstanding eiciency gains up to 4 percent and up to 16 K lower device temperature compared to
similar competitor technologies.
0.5 1.0 1.5 2.0 2.5
0.5
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
Relative eiciency
@ 230 V
AC
; T
amb
= 25°C
eta [%]
I
OUT
[A]
C6
P7
Competitor A Competitor B Competitor C
4 %
1.5 %
Temp [K]
C6P7
Competitor A Competitor B Competitor C
13
5
10
16
18
16
14
12
10
8
6
4
2
0
Relative temperature
@ 230 V
AC
; T
amb
= 25°C; 30 min burn-in
16 K
These measurements underpin the new 700 V CoolMOS™ P7 technology is the right choice for high power density designs, very slim form
factors. It results in best-in-class product performance especially when operating at high switching frequencies.
700 V CoolMOS™ P7 granular portfolio
ESD class
R
DS(on)
[mΩ]
TO-220
FullPAK
TO-220
FullPAK
Narrow Lead
TO-252
DPAK
TO-251
IPAK Short Lead
TO-251
IPAK Short Lead
with ISO Stando
SOT-223
CDM HBM
Class C3
≥1 kV
Class 1C
1–2 kV
2000 IPSA70R2K0P7S IPN70R2K0P7S
1400 IPD70R1K4P7S IPS70R1K4P7S IPSA70R1K4P7S IPN70R1K4P7S
1200 IPSA70R1K2P7S IPN70R1K2P7S
900 IPA70R900P7S IPAN70R900P7S IPD70R900P7S IPS70R900P7S IPSA70R900P7S IPN70R900P7S
750 IPA70R750P7S IPAN70R750P7S IPSA70R750P7S IPN70R750P7S
Class 2
2–4 kV
600 IPA70R600P7S IPAN70R600P7S IPD70R600P7S IPS70R600P7S IPSA70R600P7S IPN70R600P7S
450 IPA70R450P7S IPAN70R450P7S IPSA70R450P7S IPN70R450P7S
360 IPA70R360P7S IPAN70R360P7S IPD70R360P7S IPS70R360P7S IPSA70R360P7S IPN70R360P7S

IPSA70R2K0P7SAKMA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET CONSUMER
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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