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SI2316BDS-T1-GE3

SI2316BDS-T1-GE3
Mfr. #:
SI2316BDS-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V 4.5A 1.66W 50mohm @ 10V
Lifecycle:
New from this manufacturer.
Datasheet:
SI2316BDS-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2316BDS-T1-GE3 DatasheetSI2316BDS-T1-GE3 Datasheet (P4-P6)SI2316BDS-T1-GE3 Datasheet (P7-P9)
ECAD Model:
More Information:
SI2316BDS-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SOT-23-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
4.5 A
Rds On - Drain-Source Resistance:
50 mOhms
Vgs th - Gate-Source Threshold Voltage:
1 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
6.35 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
1.66 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
TrenchFET
Packaging:
Reel
Height:
1.45 mm
Length:
2.9 mm
Series:
SI2
Transistor Type:
1 N-Channel
Width:
1.6 mm
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
6 S
Fall Time:
7 ns
Product Type:
MOSFET
Rise Time:
11 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
12 ns
Typical Turn-On Delay Time:
4.5 ns
Part # Aliases:
SI2316BDS-GE3
Unit Weight:
0.000282 oz
Tags
SI2316BDS-T, SI2316B, SI2316, SI231, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Si2316BDS Series N-Channel 30 V 50 mOhm 1.66 W Surface Mount Mosfet - TO-236
***et
Trans MOSFET N-CH 30V 3.9A 3-Pin SOT-23 T/R
***nell
N CHANNEL MOSFET, 30V, 4.5A, TO-236
***ment14 APAC
N CHANNEL MOSFET, 30V, 4.5A, TO-236; Tra; N CHANNEL MOSFET, 30V, 4.5A, TO-236; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:3V; No. of Pins:3
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Part # Mfg. Description Stock Price
SI2316BDS-T1-GE3
DISTI # V72:2272_09216799		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.9A 3-Pin SOT-23 T/R
RoHS: Compliant		1359
  • 1000:$0.2377
  • 500:$0.2933
  • 250:$0.3247
  • 100:$0.3608
  • 25:$0.4261
  • 10:$0.5208
  • 1:$0.6406
SI2316BDS-T1-GE3
DISTI # V36:1790_09216799		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.9A 3-Pin SOT-23 T/R
RoHS: Compliant		0
  • 3000000:$0.2045
  • 1500000:$0.2047
  • 300000:$0.2133
  • 30000:$0.2263
  • 3000:$0.2284
SI2316BDS-T1-GE3
DISTI # SI2316BDS-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 4.5A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		78345In Stock
  • 1000:$0.2596
  • 500:$0.3245
  • 100:$0.4104
  • 10:$0.5350
  • 1:$0.6100
SI2316BDS-T1-GE3
DISTI # SI2316BDS-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 4.5A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		75345In Stock
  • 1000:$0.2596
  • 500:$0.3245
  • 100:$0.4104
  • 10:$0.5350
  • 1:$0.6100
SI2316BDS-T1-GE3
DISTI # SI2316BDS-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 4.5A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		75000In Stock
  • 30000:$0.1995
  • 15000:$0.2047
  • 6000:$0.2126
  • 3000:$0.2284
SI2316BDS-T1-GE3
DISTI # 32316314		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.9A 3-Pin SOT-23 T/R
RoHS: Compliant		33000
  • 3000:$0.3219
SI2316BDS-T1-GE3
DISTI # 32878769		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.9A 3-Pin SOT-23 T/R
RoHS: Compliant		3716
  • 184:$0.4200
SI2316BDS-T1-GE3
DISTI # 30286303		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.9A 3-Pin SOT-23 T/R
RoHS: Compliant		1359
  • 34:$0.6406
SI2316BDS-T1-GE3
DISTI # SI2316BDS-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.9A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2316BDS-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.1923
  • 18000:$0.1976
  • 12000:$0.2032
  • 6000:$0.2119
  • 3000:$0.2183
SI2316BDS-T1-GE3
DISTI # 16P3710		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.9A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 16P3710)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1000:$0.3000
  • 500:$0.3750
  • 250:$0.4150
  • 100:$0.4550
  • 50:$0.5280
  • 25:$0.5990
  • 1:$0.7500
SI2316BDS-T1-GE3
DISTI # 29X0525		Vishay IntertechnologiesMOSFET, N CHANNEL, 30V, 4.5A, TO-236-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.041ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
  • 50000:$0.1940
  • 30000:$0.2030
  • 20000:$0.2180
  • 10000:$0.2330
  • 5000:$0.2520
  • 1:$0.2580
SI2316BDS-T1-GE3
DISTI # 16P3710		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 4.5A, TO-236,Transistor Polarity:N Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.08ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V RoHS Compliant: Yes3716
  • 500:$0.2310
  • 1000:$0.2310
  • 100:$0.2500
  • 250:$0.2500
  • 1:$0.2730
  • 25:$0.2730
  • 50:$0.2730
SI2316BDS-T1-GE3Vishay IntertechnologiesSi2316BDS Series N-Channel 30 V 50 mOhm 1.66 W Surface Mount Mosfet - TO-236
RoHS: Compliant		48000Reel
  • 3000:$0.1960
SI2316BDS-T1-GE3
DISTI # 781-SI2316BDS-T1-GE3		Vishay IntertechnologiesMOSFET 30V 4.5A 1.66W 50mohm @ 10V
RoHS: Compliant		22607
  • 1:$0.5900
  • 10:$0.4780
  • 100:$0.3630
  • 500:$0.3000
  • 1000:$0.2400
  • 3000:$0.2170
  • 6000:$0.2020
  • 9000:$0.1950
SI2316BDS-T1-GE3Vishay SiliconixSMALL SIGNAL FIELD-EFFECT TRANSISTOR, 3.9A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-23620
  • 8:$0.5100
  • 1:$0.6800
SI2316BDS-T1-GE3Vishay IntertechnologiesMOSFET 30V 4.5A 1.66W 50mohm @ 10V
RoHS: Compliant		Americas -
    SI2316BDS-T1-GE3
    DISTI # XSFP00000063437    		Vishay Siliconix 
    RoHS: Compliant    		39000 in Stock0 on Order
    • 39000:$0.2613
    • 3000:$0.2800
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    Availability
    Stock:
    22
    On Order:
    2005
    Enter Quantity:
    Current price of SI2316BDS-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.59
    $0.59
    10
    $0.48
    $4.78
    100
    $0.36
    $36.30
    500
    $0.30
    $150.00
    1000
    $0.24
    $240.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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