IPD06P002NATMA1

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

35 A

Rds On - Drain-Source Resistance:

38 mOhms

Vgs th - Gate-Source Threshold Voltage:

- 4 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

- 63 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

125 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Transistor Type:

1 P-Channel

Brand:

Infineon Technologies

Forward Transconductance - Min:

33 S

Fall Time:

19 ns

Product Type:

MOSFET

Rise Time:

19 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

47 ns

Typical Turn-On Delay Time:

16 ns

Part # Aliases:

IPD06P002N

Tags

IPD06P, IPD06, IPD0, IPD