IPD06

IPD060N03LGATMA1 vs IPD060N03L G vs IPD060N03LGBTMA1

 
PartNumberIPD060N03LGATMA1IPD060N03L GIPD060N03LGBTMA1
DescriptionMOSFET N-Ch 30V 50A DPAK-2MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3MOSFET LV POWER MOS
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3TO-252-3
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current50 A50 A-
Rds On Drain Source Resistance6 mOhms6 mOhms-
ConfigurationSingleSingle-
TradenameOptiMOSOptiMOS-
PackagingReelReelReel
Height2.3 mm2.3 mm2.3 mm
Length6.5 mm6.5 mm6.5 mm
SeriesOptiMOS 3--
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm6.22 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETsMOSFETs
Part # AliasesG IPD060N03L IPD6N3LGXT SP000680632IPD060N03LGBTMA1 IPD6N3LGXT SP000236948IPD6N3LGXT SP000236948
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Vgs Gate Source Voltage-20 V-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 175 C-
Pd Power Dissipation-56 W-
Channel Mode-Enhancement-
Fall Time-3 ns-
Rise Time-3 ns-
Typical Turn Off Delay Time-20 ns-
Typical Turn On Delay Time-5 ns-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPD068N10N3GATMA1 MOSFET MV POWER MOS
IPD068P03L3GATMA1 MOSFET SMALL SIGNAL+P-CH
IPD060N03LGATMA1 MOSFET N-Ch 30V 50A DPAK-2
IPD060N03L G MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3
IPD060N03LGATMA1 MOSFET N-CH 30V 50A TO252-3
IPD060N03LGBTMA1 MOSFET N-CH 30V 50A TO252-3
IPD06N03LB G MOSFET N-CH 30V 50A TO-252
IPD068N10N3GATMA1 MOSFET N-CH 100V 90A
IPD068N10N3GBTMA1 MOSFET N-CH 100V 90A TO252-3
IPD068P03L3GATMA1 MOSFET P-CH 30V 70A TO252-3
IPD068P03L3GBTMA1 MOSFET P-CH 30V 70A TO252-3
IPD06N03LA G MOSFET N-CH 25V 50A DPAK
Infineon Technologies
Infineon Technologies
IPD060N03LGBTMA1 MOSFET LV POWER MOS
IPD06N03LB G MOSFET N-Ch 30V 50A DPAK-2
IPD068N10N3GBTMA1 MOSFET N-Ch 100V 90A DPAK-2 OptiMOS 3
IPD06P002NATMA1 MOSFET
IPD068P03L3GATMA1-CUT TAPE New and Original
IPD060N03LGINCT - Bulk (Alt: IPD060N03LGINCT)
IPD060N03L New and Original
IPD060N03LG Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-252
IPD060N03LG(060N03L) New and Original
IPD060N03LG,060N03L New and Original
IPD068N10N3 New and Original
IPD068N10N3 G MOSFET N-Ch 100V 90A DPAK-2 OptiMOS 3
IPD068N10N3G Trans MOSFET N-CH 100V 90A 3-Pin(2+Tab) TO-252 (Alt: IPD068N10N3 G)
IPD068N10N3G 068N10N New and Original
IPD068N10N3GS New and Original
IPD068P03L New and Original
IPD068P03L3G Trans MOSFET P-CH 30V 70A 3-Pin TO-252 T/R (Alt: IPD068P03L3 G)
IPD068P03L3G 068P03L New and Original
IPD068P03L3GBTMA1 , 2SD2 New and Original
IPD068P03L3GS New and Original
IPD0694A3 New and Original
IPD06N03 New and Original
IPD06N03L New and Original
IPD06N03LA MOSFET Transistor, N-Channel, TO-252AA
IPD06N03LA IPD06N03L New and Original
IPD06N03LA,06N03LA New and Original
IPD06N03LA-G New and Original
IPD06N03LAG Power Field-Effect Transistor, 50A I(D), 25V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
IPD06N03LAG , MAX6476UT1 New and Original
IPD06N03LAGX New and Original
IPD06N03LAGXT New and Original
IPD06N03LB New and Original
IPD06N03LBG New and Original
IPD06N03LG New and Original
IPD06N03LZ New and Original
IPD06N03LZG New and Original
IPD06N06L New and Original
IPD060N03L G MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3
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