IPD068N10N3GBTMA1

IPD068N10N3GBTMA1
Mfr. #:
IPD068N10N3GBTMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 100V 90A DPAK-2 OptiMOS 3
Lifecycle:
New from this manufacturer.
Datasheet:
IPD068N10N3GBTMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
90 A
Rds On - Drain-Source Resistance:
5.7 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
68 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
150 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
2.3 mm
Length:
6.5 mm
Series:
XPD068N10
Transistor Type:
1 N-Channel
Width:
6.22 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
54 S
Fall Time:
9 ns
Product Type:
MOSFET
Rise Time:
37 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
37 ns
Typical Turn-On Delay Time:
19 ns
Part # Aliases:
G IPD068N10N3 IPD068N10N3GXT SP000469892
Unit Weight:
0.139332 oz
Tags
IPD068N10N3G, IPD068N, IPD068, IPD06, IPD0, IPD
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Part # Mfg. Description Stock Price
IPD068N10N3GBTMA1
DISTI # IPD068N10N3GBTMA1TR-ND
Infineon Technologies AGMOSFET N-CH 100V 90A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    IPD068N10N3 G
    DISTI # 726-IPD068N10N3G
    Infineon Technologies AGMOSFET N-Ch 100V 90A DPAK-2 OptiMOS 3
    RoHS: Compliant
    0
      IPD068N10N3GBTMA1
      DISTI # 726-IPD068N10N3GBTMA
      Infineon Technologies AGMOSFET N-Ch 100V 90A DPAK-2 OptiMOS 3
      RoHS: Compliant
      0
        Image Part # Description
        IPD068N10N3GATMA1

        Mfr.#: IPD068N10N3GATMA1

        OMO.#: OMO-IPD068N10N3GATMA1

        MOSFET MV POWER MOS
        IPD068N10N3GBTMA1

        Mfr.#: IPD068N10N3GBTMA1

        OMO.#: OMO-IPD068N10N3GBTMA1

        MOSFET N-Ch 100V 90A DPAK-2 OptiMOS 3
        IPD068N10N3

        Mfr.#: IPD068N10N3

        OMO.#: OMO-IPD068N10N3-1190

        New and Original
        IPD068N10N3 G

        Mfr.#: IPD068N10N3 G

        OMO.#: OMO-IPD068N10N3-G-1190

        MOSFET N-Ch 100V 90A DPAK-2 OptiMOS 3
        IPD068N10N3G

        Mfr.#: IPD068N10N3G

        OMO.#: OMO-IPD068N10N3G-1190

        Trans MOSFET N-CH 100V 90A 3-Pin(2+Tab) TO-252 (Alt: IPD068N10N3 G)
        IPD068N10N3G 068N10N

        Mfr.#: IPD068N10N3G 068N10N

        OMO.#: OMO-IPD068N10N3G-068N10N-1190

        New and Original
        IPD068N10N3GATMA1

        Mfr.#: IPD068N10N3GATMA1

        OMO.#: OMO-IPD068N10N3GATMA1-INFINEON-TECHNOLOGIES

        MOSFET N-CH 100V 90A
        IPD068N10N3GBTMA1

        Mfr.#: IPD068N10N3GBTMA1

        OMO.#: OMO-IPD068N10N3GBTMA1-INFINEON-TECHNOLOGIES

        MOSFET N-CH 100V 90A TO252-3
        IPD068N10N3GS

        Mfr.#: IPD068N10N3GS

        OMO.#: OMO-IPD068N10N3GS-1190

        New and Original
        Availability
        Stock:
        Available
        On Order:
        1500
        Enter Quantity:
        Current price of IPD068N10N3GBTMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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