PartNumber | IPD068N10N3GATMA1 | IPD068N10N3GBTMA1 |
Description | MOSFET MV POWER MOS | MOSFET N-Ch 100V 90A DPAK-2 OptiMOS 3 |
Manufacturer | Infineon | Infineon |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | PG-TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 100 V |
Id Continuous Drain Current | 90 A | 90 A |
Rds On Drain Source Resistance | 6.8 mOhms | 5.7 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | 2 V |
Vgs Gate Source Voltage | 10 V | 20 V |
Qg Gate Charge | 51 nC | 68 nC |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C |
Pd Power Dissipation | 150 W | 150 W |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Tradename | OptiMOS | OptiMOS |
Packaging | Reel | Reel |
Height | 2.3 mm | 2.3 mm |
Length | 6.5 mm | 6.5 mm |
Series | OptiMOS 3 | XPD068N10 |
Transistor Type | 1 N-Channel | 1 N-Channel |
Width | 6.22 mm | 6.22 mm |
Brand | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | 54 S | 54 S |
Fall Time | 9 ns | 9 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 37 ns | 37 ns |
Factory Pack Quantity | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 37 ns | 37 ns |
Typical Turn On Delay Time | 19 ns | 19 ns |
Part # Aliases | G IPD068N10N3 SP001127816 | G IPD068N10N3 IPD068N10N3GXT SP000469892 |
Unit Weight | 0.139332 oz | 0.139332 oz |