IPD068N10N3G

IPD068N10N3GATMA1 vs IPD068N10N3GBTMA1

 
PartNumberIPD068N10N3GATMA1IPD068N10N3GBTMA1
DescriptionMOSFET MV POWER MOSMOSFET N-Ch 100V 90A DPAK-2 OptiMOS 3
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CasePG-TO-252-3TO-252-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V100 V
Id Continuous Drain Current90 A90 A
Rds On Drain Source Resistance6.8 mOhms5.7 mOhms
Vgs th Gate Source Threshold Voltage2 V2 V
Vgs Gate Source Voltage10 V20 V
Qg Gate Charge51 nC68 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation150 W150 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameOptiMOSOptiMOS
PackagingReelReel
Height2.3 mm2.3 mm
Length6.5 mm6.5 mm
SeriesOptiMOS 3XPD068N10
Transistor Type1 N-Channel1 N-Channel
Width6.22 mm6.22 mm
BrandInfineon TechnologiesInfineon Technologies
Forward Transconductance Min54 S54 S
Fall Time9 ns9 ns
Product TypeMOSFETMOSFET
Rise Time37 ns37 ns
Factory Pack Quantity25002500
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time37 ns37 ns
Typical Turn On Delay Time19 ns19 ns
Part # AliasesG IPD068N10N3 SP001127816G IPD068N10N3 IPD068N10N3GXT SP000469892
Unit Weight0.139332 oz0.139332 oz
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPD068N10N3GATMA1 MOSFET MV POWER MOS
IPD068N10N3GATMA1 MOSFET N-CH 100V 90A
IPD068N10N3GBTMA1 MOSFET N-CH 100V 90A TO252-3
Infineon Technologies
Infineon Technologies
IPD068N10N3GBTMA1 MOSFET N-Ch 100V 90A DPAK-2 OptiMOS 3
IPD068N10N3G Trans MOSFET N-CH 100V 90A 3-Pin(2+Tab) TO-252 (Alt: IPD068N10N3 G)
IPD068N10N3G 068N10N New and Original
IPD068N10N3GS New and Original
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