IPD068P03L3GATMA1

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PG-TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

70 A

Rds On - Drain-Source Resistance:

6.8 mOhms

Vgs th - Gate-Source Threshold Voltage:

1 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

91 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

100 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

2.3 mm

Length:

6.5 mm

Transistor Type:

1 P-Channel

Width:

6.22 mm

Brand:

Infineon Technologies

Forward Transconductance - Min:

50 S

Fall Time:

31 ns

Product Type:

MOSFET

Rise Time:

100 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

84 ns

Typical Turn-On Delay Time:

11 ns

Part # Aliases:

G IPD068P03L3 SP001127838

Unit Weight:

0.139332 oz

Tags

IPD068P03L3, IPD068P, IPD068, IPD06, IPD0, IPD