IPD060N03LGATMA1

IPD060N03LGATMA1
Mfr. #:
IPD060N03LGATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 30V 50A DPAK-2
Lifecycle:
New from this manufacturer.
Datasheet:
IPD060N03LGATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
50 A
Rds On - Drain-Source Resistance:
6 mOhms
Configuration:
Single
Tradename:
OptiMOS
Packaging:
Reel
Height:
2.3 mm
Length:
6.5 mm
Series:
OptiMOS 3
Transistor Type:
1 N-Channel
Width:
6.22 mm
Brand:
Infineon Technologies
Product Type:
MOSFET
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Part # Aliases:
G IPD060N03L IPD6N3LGXT SP000680632
Unit Weight:
0.139332 oz
Tags
IPD060N03LG, IPD060, IPD06, IPD0, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Japan
Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) DPAK T/R
***p One Stop Global
Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-252
***ical
Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) DPAK
***et Europe
Trans MOSFET N-CH 30V 50A 3-Pin TO-252 T/R
***Components
MOSFET N-Channel 30V 50A OptiMOS3 TO252
***i-Key
MOSFET N-CH 30V 50A TO252-3
***ronik
N-CH 30V 50A 6mOhm TO252-3
***ark
Mosfet, N Channel, 30V, 50A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.005Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V Rohs Compliant: Yes
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ment14 APAC
Prices include import duty and tax. MOSFET, N CH, 50A, 30V, PG-TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.005ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:56W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:50A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***nell
MOSFET, CANALE N, 50A, 30V, PG-TO252-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:50A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.005ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.2V; Dissipazione di Potenza Pd:56W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:50A; Intervallo Temperatura di Esercizio:Da -55°C a +175°C; Temperatura di Esercizio Min:-55°C; Tensione Vgs Max:20V; Tipo di Transistor:Power MOSFET
Part # Mfg. Description Stock Price
IPD060N03LGATMA1
DISTI # V72:2272_06390994
Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
1400
  • 1000:$0.3182
  • 500:$0.3646
  • 250:$0.3892
  • 100:$0.3935
  • 25:$0.5574
  • 10:$0.5645
  • 1:$0.6548
IPD060N03LGATMA1
DISTI # IPD060N03LGATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 30V 50A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1736In Stock
  • 1000:$0.4059
  • 500:$0.5074
  • 100:$0.6849
  • 10:$0.8880
  • 1:$1.0100
IPD060N03LGATMA1
DISTI # IPD060N03LGATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 30V 50A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1736In Stock
  • 1000:$0.4059
  • 500:$0.5074
  • 100:$0.6849
  • 10:$0.8880
  • 1:$1.0100
IPD060N03LGATMA1
DISTI # IPD060N03LGATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 30V 50A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$0.3571
IPD060N03LGATMA1
DISTI # 30720096
Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
2479
  • 25000:$0.3321
  • 15000:$0.3330
  • 10000:$0.3340
  • 2500:$0.3349
IPD060N03LGATMA1
DISTI # 26195697
Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
1400
  • 1000:$0.3182
  • 500:$0.3646
  • 250:$0.3892
  • 100:$0.3935
  • 25:$0.5574
  • 23:$0.5645
IPD060N03LGATMA1
DISTI # IPD060N03LGATMA1
Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD060N03LGATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 2500
  • 2500:$0.3489
  • 5000:$0.3489
  • 10000:$0.3479
  • 15000:$0.3469
  • 25000:$0.3459
IPD060N03LGATMA1
DISTI # IPD060N03LGBTMA1
Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD060N03LGBTMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.3219
  • 5000:$0.3099
  • 10000:$0.2989
  • 15000:$0.2889
  • 25000:$0.2839
IPD060N03LGATMA1
DISTI # SP000680632
Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin TO-252 T/R (Alt: SP000680632)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 2500:€0.4839
  • 5000:€0.4159
  • 10000:€0.3539
  • 15000:€0.3039
  • 25000:€0.2879
IPD060N03LGATMA1
DISTI # 13AC9039
Infineon Technologies AGMOSFET, N-CH, 30V, 50A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.005ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power DissipationRoHS Compliant: Yes1530
  • 1:$0.8400
  • 10:$0.6950
  • 25:$0.6130
  • 50:$0.5300
  • 100:$0.4480
  • 250:$0.4180
  • 500:$0.3890
  • 1000:$0.3590
IPD060N03LGATMA1
DISTI # 726-IPD060N03LGATMA1
Infineon Technologies AGMOSFET N-Ch 30V 50A DPAK-2
RoHS: Compliant
156
  • 1:$0.8400
  • 10:$0.6950
  • 100:$0.4480
  • 1000:$0.3590
  • 2500:$0.3030
IPD060N03LGATMA1Infineon Technologies AGPower Field-Effect Transistor, 50A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
RoHS: Compliant
2486
  • 1000:$0.2400
  • 500:$0.2500
  • 100:$0.2600
  • 25:$0.2700
  • 1:$0.2900
IPD060N03LGATMA1Infineon Technologies AG 3000
    IPD060N03LGATMA1
    DISTI # IPD060N03LGATMA1
    Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,43A,56W,PG-TO252-31989
    • 1:$0.7374
    • 3:$0.4935
    • 10:$0.3964
    • 100:$0.3557
    • 1000:$0.3320
    IPD060N03LGATMA1
    DISTI # 2725846
    Infineon Technologies AGMOSFET, N-CH, 30V, 50A, TO-252
    RoHS: Compliant
    1530
    • 5:£0.5970
    • 25:£0.5410
    • 100:£0.3420
    • 250:£0.3050
    • 500:£0.2690
    IPD060N03LGATMA1
    DISTI # C1S322000529036
    Infineon Technologies AGMOSFETs
    RoHS: Compliant
    1400
    • 250:$0.3901
    • 100:$0.4035
    • 25:$0.5594
    • 10:$0.5691
    IPD060N03LGATMA1
    DISTI # C1S322000332935
    Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-252
    RoHS: Compliant
    2500
    • 1000:$0.4680
    • 500:$0.5100
    • 100:$0.6200
    • 50:$0.6960
    • 25:$0.7650
    • 5:$1.9100
    IPD060N03LGATMA1
    DISTI # 2725846
    Infineon Technologies AGMOSFET, N-CH, 30V, 50A, TO-252
    RoHS: Compliant
    1530
    • 1:$1.6100
    • 10:$1.4200
    • 100:$1.1000
    • 500:$0.8090
    • 1000:$0.6470
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    OMO.#: OMO-MFR-25FTE52-330R

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    OMO.#: OMO-KNP2WSJR-73-2R2

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    513002B02500G

    Mfr.#: 513002B02500G

    OMO.#: OMO-513002B02500G

    Heat Sinks Extruded Style Heatsink for TO-220, Radial Fins, Vertical Mounting, 13.4 n Thermal Resistance, Black Anodized, 2.67mm Hole, 25.4x34.92x12.7mm
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    OMO.#: OMO-LRS-75-5-MEAN-WELL

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    Mfr.#: MFR-25FTE52-330R

    OMO.#: OMO-MFR-25FTE52-330R-YAGEO

    Metal Film Resistors - Through Hole 330 OHM 1/4W 1%
    MFS1/4DCT52R10R0F

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    OMO.#: OMO-MFS1-4DCT52R10R0F-1088

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    Metal Oxide Resistors RSS2 3.3 5%TR
    Availability
    Stock:
    Available
    On Order:
    1985
    Enter Quantity:
    Current price of IPD060N03LGATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.83
    $0.83
    10
    $0.70
    $6.95
    100
    $0.45
    $44.80
    1000
    $0.36
    $359.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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