IPD060N03LGATMA1 vs IPD060N03L G vs IPD060N03LG(060N03L)

 
PartNumberIPD060N03LGATMA1IPD060N03L GIPD060N03LG(060N03L)
DescriptionMOSFET N-Ch 30V 50A DPAK-2MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current50 A50 A-
Rds On Drain Source Resistance6 mOhms6 mOhms-
ConfigurationSingleSingle-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
SeriesOptiMOS 3--
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm-
BrandInfineon TechnologiesInfineon Technologies-
Product TypeMOSFETMOSFET-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Part # AliasesG IPD060N03L IPD6N3LGXT SP000680632IPD060N03LGBTMA1 IPD6N3LGXT SP000236948-
Unit Weight0.139332 oz0.139332 oz-
Vgs Gate Source Voltage-20 V-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 175 C-
Pd Power Dissipation-56 W-
Channel Mode-Enhancement-
Fall Time-3 ns-
Rise Time-3 ns-
Typical Turn Off Delay Time-20 ns-
Typical Turn On Delay Time-5 ns-
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