IPD060

IPD060N03LGATMA1 vs IPD060N03L G vs IPD060N03LGBTMA1

 
PartNumberIPD060N03LGATMA1IPD060N03L GIPD060N03LGBTMA1
DescriptionMOSFET N-Ch 30V 50A DPAK-2MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3MOSFET LV POWER MOS
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3TO-252-3
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current50 A50 A-
Rds On Drain Source Resistance6 mOhms6 mOhms-
ConfigurationSingleSingle-
TradenameOptiMOSOptiMOS-
PackagingReelReelReel
Height2.3 mm2.3 mm2.3 mm
Length6.5 mm6.5 mm6.5 mm
SeriesOptiMOS 3--
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm6.22 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETsMOSFETs
Part # AliasesG IPD060N03L IPD6N3LGXT SP000680632IPD060N03LGBTMA1 IPD6N3LGXT SP000236948IPD6N3LGXT SP000236948
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Vgs Gate Source Voltage-20 V-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 175 C-
Pd Power Dissipation-56 W-
Channel Mode-Enhancement-
Fall Time-3 ns-
Rise Time-3 ns-
Typical Turn Off Delay Time-20 ns-
Typical Turn On Delay Time-5 ns-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPD060N03LGATMA1 MOSFET N-Ch 30V 50A DPAK-2
IPD060N03L G MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3
IPD060N03LGATMA1 MOSFET N-CH 30V 50A TO252-3
IPD060N03LGBTMA1 MOSFET N-CH 30V 50A TO252-3
Infineon Technologies
Infineon Technologies
IPD060N03LGBTMA1 MOSFET LV POWER MOS
IPD060N03LGINCT - Bulk (Alt: IPD060N03LGINCT)
IPD060N03L New and Original
IPD060N03LG Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-252
IPD060N03LG(060N03L) New and Original
IPD060N03LG,060N03L New and Original
IPD060N03L G MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3
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