2SK3271-01

Mfr. #:: 2SK3271-01
Manufacturer:: Fuji Electric Co Ltd
Description:: MOSFET, Power, N-Ch, VDSS 60V, RDS(ON) 5 Milliohms, ID +/-100A, TO-3P, PD 155W, VGS +/-
Lifecycle:: New from this manufacturer.
Datasheet:: 2SK3271-01 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Tags: 2SK327, 2SK32, 2SK3, 2SK

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SK3271-01 Description

***(Formerly Allied Electronics): Power MOSFET,N-Ch,VDSS 60V,RDS(ON) 5 Milliohms,ID+/-100A,TO-3P,PD 155W,VGS+/-30V

***ical: Trans MOSFET N-CH Si 60V 100A Automotive 3-Pin(3+Tab) TO-3P

***ource: N-channel MOS-FET

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.082Ohm;ID 31A;TO-220AB;PD 200W;VGS +/-30V

***ure Electronics: Single N-Channel 200 V 0.082 Ohm 107 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***p One Stop: Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 200 W

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, 200V, 31A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:200V; On Resistance Rds(on):82mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:31A; Junction to Case Thermal Resistance A:0.75°C/W; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:124A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5.5V

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

***(Formerly Allied Electronics): IRF840APBF N-channel MOSFET Transistor; 8 A; 500 V; 3-Pin TO-220AB

***th Star Micro: Transistor MOSFET N-CH 500V 8A 3-Pin (3+Tab) TO-220AB

***ure Electronics: N-Channel 500 V 0.85 O 38 nC Flange Mount Power Mosfet - TO-220-3

***enic: 500V 8A 850m´Î@10V4.8A 125W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

*** Stop Electro: Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, 500V, 8A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:500V; On Resistance Rds(on):850mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:125W; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:8A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1°C/W; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:32A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***ure Electronics: Single N-Channel 650 V 0.93 Ohms Flange Mount Power Mosfet - TO-220-3

***ical: Trans MOSFET N-CH 650V 8.5A 3-Pin(3+Tab) TO-220AB

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: TO-220 Polarity: N Power dissipation: 167 W

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 8.5A I(D), 650V, 0.93ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.5A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.93ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 167W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: 8.5A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 21A; Voltage Vds Typ: 650V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V

***(Formerly Allied Electronics): IRFB11N50APBF N-channel MOSFET Transistor; 11 A; 500 V; 3-Pin TO-220AB

***ure Electronics: Single N-Channel 500 V 0.52 Ohms Flange Mount Power Mosfet - TO-220-3

*** Source Electronics: Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220AB / MOSFET N-CH 500V 11A TO-220AB

***ment14 APAC: MOSFET, N, 500V, 11A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:500V; On Resistance Rds(on):520mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:11A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:44A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.025Ohm;ID 59A;TO-220AB;PD 200W;VGS +/-30V

***ure Electronics: Single N-Channel 100 V 25 mOhm 114 nC HEXFET® Power Mosfet - TO-220-3

***eco: IRFB59N10DPBF,MOSFET, 100V, 59 A, 25 MOHM, 76 NC QG, TO-220A

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***el Electronic: Power Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:59A; On Resistance, Rds(on):25mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

***ure Electronics: Single N-Channel 150 V 0.09 Ohm 37 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***(Formerly Allied Electronics): MOSFET, 150V, 23A, 90 mOhm, 37 nC Qg, TO-220AB

***Yang: Trans MOSFET N-CH 150V 23A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 23A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:150V; On Resistance Rds(on):90mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:136W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:23A; Package / Case:TO-220AB; Power Dissipation Pd:136W; Power Dissipation Pd:136W; Pulse Current Idm:92A; Voltage Vds Typ:150V; Voltage Vgs th Max:5.5V

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

Market price

Part #	Mfg.	Description	Stock	Price
2SK3271-01 DISTI # 70212521	Fuji Electric Co Ltd	MOSFET,Power,N-Ch,VDSS 60V,RDS(ON) 5 Milliohms,ID +/-100A,TO-3P,PD 155W,VGS +/- RoHS: Compliant	0	500:$4.1200
2SK3271-01 DISTI # FE0000000000296	Fuji Electric Co Ltd	100A,60V,0.0065ohm,N-CHANNEL,Si,POWER,MOSFET,TO-247 RoHS: Compliant	0 in Stock0 on Order

Image	Part #	Description
	Mfr.#: 2SK3200 OMO.#: OMO-2SK3200-1190	New and Original
	Mfr.#: 2SK3217 OMO.#: OMO-2SK3217-1190	New and Original
	Mfr.#: 2SK3225Z OMO.#: OMO-2SK3225Z-1190	New and Original
	Mfr.#: 2SK323 OMO.#: OMO-2SK323-1190	New and Original
	Mfr.#: 2SK3230C-T1 OMO.#: OMO-2SK3230C-T1-1190	New and Original
	Mfr.#: 2SK3234 OMO.#: OMO-2SK3234-1190	New and Original
	Mfr.#: 2SK3271-01 OMO.#: OMO-2SK3271-01-1190	MOSFET, Power, N-Ch, VDSS 60V, RDS(ON) 5 Milliohms, ID +/-100A, TO-3P, PD 155W, VGS +/-
	Mfr.#: 2SK3277 OMO.#: OMO-2SK3277-1190	New and Original
	Mfr.#: 2SK3291-TD-E OMO.#: OMO-2SK3291-TD-E-1190	- Bulk (Alt: 2SK3291-TD-E)
	Mfr.#: 2SK3294-ZJ OMO.#: OMO-2SK3294-ZJ-1190	New and Original

2SK3271-01

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes