SI4164DY-T1-GE3

Mfr. #:: SI4164DY-T1-GE3
Manufacturer:: Vishay
Description:: Trans MOSFET N-CH 30V 21.5A 8-Pin SOIC N T/R
Lifecycle:: New from this manufacturer.
Datasheet:: SI4164DY-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: SI4164DY-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer: VISHAY

Product Category: FETs - Single

Packaging: Reel

Part-Aliases: SI4164DY-GE3

Unit-Weight: 0.006596 oz

Mounting-Style: SMD/SMT

Package-Case: SOIC-Narrow-8

Technology: Si

Number-of-Channels: 1 Channel

Configuration: Single Quad Drain Triple Source

Transistor-Type: 1 N-Channel

Pd-Power-Dissipation: 3 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 16 ns

Rise-Time: 16 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuous-Drain-Current: 30 A

Vds-Drain-Source-Breakdown-Voltage: 30 V

Rds-On-Drain-Source-Resistance: 3.2 mOhms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 48 ns

Typical-Turn-On-Delay-Time: 35 ns

Forward-Transconductance-Min: 75 S

Channel-Mode: Enhancement

Tags: SI4164DY-T, SI4164D, SI4164, SI416, SI41, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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SI4164DY-T1-GE3 Description

***ure Electronics: Single N-Channel 30 V 0.0032 Ohm Surface Mount Power Mosfet - SOIC-8

***ied Electronics & Automation: MOSFET; N-CH; VDS 30V; RDS(ON) 0.0026Ohm; ID 30A; SO-8; PD 6.0W; VGS +/-20V

***ark: N Channel Mosfet, 30V, 30A, Soic, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:30A; On Resistance Rds(On):0.0026Ohm; Transistor Mounting:surface Mount; Threshold Voltage Vgs:2.5Vrohs Compliant: Yes

***nell: MOSFET, N CH, 30V, 0.0026OHM, 30A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:6W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-

SI4164DY-T1-GE3 More Information

TrenchFET® Gen III Power MOSFET: The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
SI4164DY-T1-GE3 DISTI # V72:2272_09215538	Vishay Intertechnologies	Trans MOSFET N-CH 30V 21.5A 8-Pin SOIC N T/R RoHS: Compliant	2277	1000:$0.6622 500:$0.7468 250:$0.8021 100:$0.8569 25:$1.0278 10:$1.0617 1:$1.2263
SI4164DY-T1-GE3 DISTI # SI4164DY-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 30A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4240In Stock	1000:$0.7233 500:$0.9162 100:$1.1814 10:$1.4950 1:$1.6900
SI4164DY-T1-GE3 DISTI # SI4164DY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 30A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4240In Stock	1000:$0.7233 500:$0.9162 100:$1.1814 10:$1.4950 1:$1.6900
SI4164DY-T1-GE3 DISTI # SI4164DY-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 30A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	2500:$0.6554
SI4164DY-T1-GE3 DISTI # 31154794	Vishay Intertechnologies	Trans MOSFET N-CH 30V 21.5A 8-Pin SOIC N T/R RoHS: Compliant	2277	1000:$0.6622 500:$0.7468 250:$0.8021 100:$0.8569 25:$1.0278 13:$1.0617
SI4164DY-T1-GE3 DISTI # SI4164DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 21.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4164DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.5429 5000:$0.5269 10000:$0.5049 15000:$0.4909 25000:$0.4779
SI4164DY-T1-GE3 DISTI # SI4164DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 21.5A 8-Pin SOIC N T/R (Alt: SI4164DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.8249 5000:€0.5909 10000:€0.4799 15000:€0.4239 25000:€0.4059
SI4164DY-T1-GE3 DISTI # 69W7195	Vishay Intertechnologies	Trans MOSFET N-CH 30V 21.5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 69W7195) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$1.6500 10:$1.3600 25:$1.2500 50:$1.1500 100:$1.0400 250:$0.9670 500:$0.8940
SI4164DY-T1-GE3 DISTI # 97W2646	Vishay Intertechnologies	MOSFET, N CH, 30V, 0.0026OHM, 30A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0026ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power , RoHS Compliant: Yes	1	1:$1.6500 10:$1.3600 25:$1.2500 50:$1.1500 100:$1.0400 500:$0.8940 1000:$0.7850
SI4164DY-T1-GE3. DISTI # 28AC2135	Vishay Intertechnologies	N-CHANNEL 30V (D-S) MOSFET , ROHS COMPLIANT: YES	0	1:$0.7840 2500:$0.7840
SI4164DY-T1-GE3 DISTI # 70026401	Vishay Siliconix	MOSFET,N-CH,VDS 30V,RDS(ON) 0.0026Ohm,ID 30A,SO-8,PD 6.0W,VGS +/-20V RoHS: Compliant	0	2500:$0.6500
SI4164DY-T1-GE3 DISTI # 781-SI4164DY-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs SO-8 RoHS: Compliant	55	1:$1.6500 10:$1.3600 100:$1.0400 500:$0.8940 1000:$0.8460 2500:$0.7840
SI4164DY-T1-GE3 DISTI # 8123198P	Vishay Intertechnologies	TRANS MOSFET N-CH 30V 21.5A, RL	1400	100:£0.7550
SI4164DY-T1-GE3	Vishay Semiconductors	21500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	5904	3637:$0.3630 1866:$0.4125 1:$1.6500
SI4164DY-T1-GE3	Vishay Siliconix		7380	5:$1.2375 18:$0.8044 64:$0.4641 217:$0.3960 469:$0.3465 1113:$0.3218
SI4164DYT1GE3	Vishay Intertechnologies	RoHS: Compliant	Europe - 2500
SI4164DY-T1-GE3 DISTI # 2335304	Vishay Intertechnologies	MOSFET, N CH, 30V, 0.0026OHM, 30A, SOIC RoHS: Compliant	1	1:$2.6200 10:$2.1600 100:$1.6500 500:$1.4200 1000:$1.2400 2500:$1.2400
SI4164DY-T1-GE3 DISTI # 2478947	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 30A, SOIC, FULL REEL RoHS: Compliant	0	2500:$2.3100 5000:$1.7700 10000:$1.4200
SI4164DY-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs SO-8	Americas -	2500:$0.6050 5000:$0.5720 10000:$0.5530
SI4164DY-T1-GE3 DISTI # 2335304	Vishay Intertechnologies	MOSFET, N CH, 30V, 0.0026OHM, 30A, SOIC RoHS: Compliant	1	5:£1.0800 25:£1.0300 100:£0.7700 250:£0.7220 500:£0.6730

Image	Part #	Description
	Mfr.#: SI4164DY-T1-GE3 OMO.#: OMO-SI4164DY-T1-GE3	MOSFET 30V Vds 20V Vgs SO-8
	Mfr.#: SI4164DY OMO.#: OMO-SI4164DY-1190	New and Original
	Mfr.#: SI4164DY-T1-E3 OMO.#: OMO-SI4164DY-T1-E3-1190	New and Original
	Mfr.#: SI4164DY-T1-GE3-CUT TAPE OMO.#: OMO-SI4164DY-T1-GE3-CUT-TAPE-1190	New and Original
	Mfr.#: SI4164DY-T1-GE3 OMO.#: OMO-SI4164DY-T1-GE3-VISHAY	Trans MOSFET N-CH 30V 21.5A 8-Pin SOIC N T/R

SI4164DY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes