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CSD19532Q5BT

CSD19532Q5BT
Mfr. #:
CSD19532Q5BT
Description:
MOSFET 100V, N ch NexFET MOSFETG , single SON5x6, 4.9mOhm 8-VSON-CLIP -55 to 150
Lifecycle:
New from this manufacturer.
Datasheet:
CSD19532Q5BT Datasheet
Delivery:
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Payment:
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ECAD Model:
More Information:
CSD19532Q5BT more Information CSD19532Q5BT Product Details
Product Attribute
Attribute Value
Manufacturer:
Texas Instruments
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
VSON-Clip-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
100 A
Rds On - Drain-Source Resistance:
4.9 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.6 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
48 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
3.1 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
NexFET
Packaging:
Reel
Height:
1 mm
Length:
6 mm
Series:
CSD19532Q5B
Transistor Type:
1 N-Channel
Width:
5 mm
Brand:
Texas Instruments
Forward Transconductance - Min:
84 S
Fall Time:
6 ns
Product Type:
MOSFET
Rise Time:
6 ns
Factory Pack Quantity:
250
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
22 ns
Typical Turn-On Delay Time:
7 ns
Unit Weight:
0.003714 oz
Tags
CSD19532, CSD1953, CSD19, CSD1, CSD
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.9 mOhm 8-VSON-CLIP -55 to 150
***ical
Trans MOSFET N-CH Si 100V 100A 8-Pin VSON-CLIP EP T/R
***as Instr.
This 100 V, 4 mΩ, SON 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
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Availability
Stock:
Available
On Order:
1985
Enter Quantity:
Current price of CSD19532Q5BT is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$2.54
$2.54
10
$2.16
$21.60
100
$1.72
$172.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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