PartNumber | CSD19532Q5B | CSD19532KTTT | CSD19532KTT |
Description | MOSFET 100V 4.0 mOhm N-Ch NexFET Power MOSFET | MOSFET 100V, N-channel NexFET Pwr MOSFET | Trans MOSFET N-CH Si 100V 200A 4-Pin(3+Tab) TO-263 T/R |
Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments |
Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
RoHS | E | E | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | VSON-CLIP-8 | TO-263-3 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
Id Continuous Drain Current | 140 A | 200 A | - |
Rds On Drain Source Resistance | 4.9 mOhms | 5.6 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2.2 V | 2.6 V | - |
Vgs Gate Source Voltage | 10 V | 20 V | - |
Qg Gate Charge | 48 nC | 44 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 175 C | + 175 C |
Pd Power Dissipation | 195 W | 250 W | - |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | - | Enhancement |
Tradename | NexFET | NexFET | - |
Packaging | Reel | Reel | Reel |
Height | 1 mm | 19.7 mm | - |
Length | 6 mm | 9.25 mm | - |
Series | CSD19532Q5B | CSD19532KTT | CSD19532KTT |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 5 mm | 10.26 mm | - |
Brand | Texas Instruments | Texas Instruments | - |
Forward Transconductance Min | 84 S | - | - |
Fall Time | 6 ns | 2 ns | 2 ns |
Product Type | MOSFET | MOSFET | - |
Rise Time | 6 ns | 3 ns | 3 ns |
Factory Pack Quantity | 2500 | 50 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 22 ns | 14 ns | 14 ns |
Typical Turn On Delay Time | 7 ns | 9 ns | 9 ns |
Unit Weight | 0.003714 oz | 0.068643 oz | - |
Product | - | Power MOSFET | - |
Type | - | N-Channel MOSFET | - |
Moisture Sensitive | - | Yes | - |
Pd Power Dissipation | - | - | 250 W |
Vgs Gate Source Voltage | - | - | +/- 20 V |
Id Continuous Drain Current | - | - | 136 A |
Vds Drain Source Breakdown Voltage | - | - | 100 V |
Vgs th Gate Source Threshold Voltage | - | - | 2.2 V |
Rds On Drain Source Resistance | - | - | 6.6 mOhms |
Qg Gate Charge | - | - | 44 nC |