Jan2N3810L/TR

Product Attribute

Attribute Value

Manufacturer:

Microchip

Product Category:

Bipolar Transistors - BJT

RoHS:

N

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-78-6

Transistor Polarity:

PNP

Configuration:

Dual

Collector- Emitter Voltage VCEO Max:

60 V

Collector- Base Voltage VCBO:

60 V

Emitter- Base Voltage VEBO:

5 V

Collector-Emitter Saturation Voltage:

0.2 V

Maximum DC Collector Current:

50 mA

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 200 C

DC Current Gain hFE Max:

450 at 100 uA, 5 V

Brand:

Microchip / Microsemi

DC Collector/Base Gain hfe Min:

100 at 10 uA, 5 V

Pd - Power Dissipation:

350 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

1

Subcategory:

Transistors

Tags

Jan2N3810, Jan2N381, Jan2N38, Jan2N3, Jan2N, Jan2, JAN