2SK4100LS

Mfr. #:: 2SK4100LS
Manufacturer:: Rochester Electronics, LLC
Description:: Power Field-Effect Transistor, 6A I(D), 650V, 1.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Lifecycle:: New from this manufacturer.
Datasheet:: 2SK4100LS Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Tags: 2SK4100L, 2SK4100, 2SK410, 2SK41, 2SK4, 2SK

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We provide 90-360 days warranty.

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2SK4100LS Description

***r Electronics: Power Field-Effect Transistor, 6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***p One Stop: Trans MOSFET N-CH 650V 6A 3-Pin(3+Tab) TO-220FI

***nell: MOSFET, N CH 650V 6A TO220; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:650V; Cont Current Id:6A; On State Resistance:1.35ohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:5V; Case Style:TO-220FI; Termination Type:Through Hole; Power Dissipation:2W; Transistor Case Style:TO-220FI

***ical: Trans MOSFET N-CH 650V 7.2A 3-Pin(2+Tab) DPAK T/R

***ark: Mosfet, N-Ch, 650V, 7.2A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:7.2A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.86Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon: CoolMOS CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. | Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV

***ineon SCT: Single N-Channel 650V 650 mOhm 23 nC CoolMOS Power Mosfet - TO-252-3, PG-TO252-3, RoHS

***ark: Mosfet, N-Ch, 650V, 10.1A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:10.1A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.54Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon: CoolMOS CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. | Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV

***itex: Transistor: N-MOSFET; unipolar; 650V; 10.1A; 0.65ohm; 28W; -40+150 deg.C; THT; TO220F

***ark: Mosfet, N-Ch, 650V, 10.1A, To-220Fp-3; Transistor Polarity:n Channel; Continuous Drain Current Id:10.1A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.54Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon: CoolMOS CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. | Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV

***i-Key: MOSFET N-CH 650V 7A TO-220

***inecomponents.com: 650V N-Channel Advance Q-FET C-Series

***ser: MOSFETs N-CH/650V/7A/QFET

***-Wing Technology: N-CHANNEL POWER MOSFET

***el Nordic: Contact for details

***icroelectronics: N-channel 650 V, 0.56 Ohm, 7 A MDmesh(TM) V Power MOSFET in IPAK

***r Electronics: Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

***nell: MOSFET, N CH, 650V, 7A, IPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.56ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 70W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)

***emi: N-Channel Power MOSFET, SuperFET® II, FAST, 600 V, 4.5 A, 900 mΩ, DPAK

***ure Electronics: FCD900N60Z Series 600 V 4.5 A N-Channel SuperFET® II Mosfet -TO-252, (D-Pak)

*** Stop Electro: Power Field-Effect Transistor, 4.5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Market price

Part #	Mfg.	Description	Stock	Price
2SK4100LS-T-MG5 DISTI # 2SK4100LS-T-MG5	ON Semiconductor	- Bulk (Alt: 2SK4100LS-T-MG5) Min Qty: 246 Container: Bulk	Americas - 0	1230:$1.1900 2460:$1.1900 246:$1.2900 492:$1.2900 738:$1.2900
2SK4100LS-T-MG5	ON Semiconductor	SWITCHING DEVICE RoHS: Not Compliant	28972	1000:$1.3400 500:$1.4100 100:$1.4700 25:$1.5300 1:$1.6500
2SK4100LS	SANYO Semiconductor Co Ltd	Power Field-Effect Transistor, 6A I(D), 650V, 1.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant	958	1000:$0.4000 500:$0.4200 100:$0.4300 25:$0.4500 1:$0.4900

Related products

Image	Part #	Description
	Mfr.#: 2SK4004 OMO.#: OMO-2SK4004-1190	New and Original
	Mfr.#: 2SK4016 OMO.#: OMO-2SK4016-1190	New and Original
	Mfr.#: 2SK4059TK-BK OMO.#: OMO-2SK4059TK-BK-1190	New and Original
	Mfr.#: 2SK4059TV-B (T5LCE) OMO.#: OMO-2SK4059TV-B-T5LCE--1190	New and Original
	Mfr.#: 2SK4101FS OMO.#: OMO-2SK4101FS-1190	- Bulk (Alt: 2SK4101FS)
	Mfr.#: 2SK4101LS-MG5,2SK4101,K4 OMO.#: OMO-2SK4101LS-MG5-2SK4101-K4-1190	New and Original
	Mfr.#: 2SK4110,2SK4106,2SK4042 OMO.#: OMO-2SK4110-2SK4106-2SK4042-1190	New and Original
	Mfr.#: 2SK4212A-ZK-E1-AY OMO.#: OMO-2SK4212A-ZK-E1-AY-1190	Small Signal Field-Effect Transistor, 48A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
	Mfr.#: 2SK4213-ZK-E1 OMO.#: OMO-2SK4213-ZK-E1-1190	New and Original
	Mfr.#: 2SK439 OMO.#: OMO-2SK439-1190	New and Original

Availability

Stock:: Available
On Order:: 2000
Enter Quantity:

Current price of 2SK4100LS is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.60~~; ~~$0.60~~

10: ~~$0.57~~; ~~$5.70~~

100: ~~$0.54~~; ~~$54.00~~

500: ~~$0.51~~; ~~$255.00~~

1000: ~~$0.48~~; ~~$480.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

2SK4100L 4
2SK4100 5
2SK410 64
2SK41 142
2SK4 511
2SK 4442

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2SK4100LS

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes