CMPA0060025F

CMPA0060025F
Mfr. #:
CMPA0060025F
Manufacturer:
N/A
Description:
RF Amplifier GaN MMIC Power Amp 0.02-6.0GHz, 25 Watt
Lifecycle:
New from this manufacturer.
Datasheet:
CMPA0060025F Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
CMPA0060025F more Information
Product Attribute
Attribute Value
Manufacturer:
Qorvo
Product Category:
RF Amplifier
RoHS:
Y
Mounting Style:
SMD/SMT
Package / Case:
QFN-32
Type:
Power Amplifier
Technology:
GaN SiC
Operating Frequency:
2.5 GHz
P1dB - Compression Point:
33 dBm
Gain:
19 dB
Operating Supply Voltage:
32 V
NF - Noise Figure:
-
Operating Supply Current:
360 mA
Packaging:
Waffle
Frequency Range:
0.03 GHz to 2.5 GHz
Product:
GaN
Brand:
Qorvo
Number of Channels:
1 Channel
Development Kit:
TGA2237-SM Eval Board
Input Return Loss:
10 dB
Moisture Sensitive:
Yes
Pd - Power Dissipation:
19 W
Product Type:
RF Amplifier
Factory Pack Quantity:
25
Subcategory:
Wireless & RF Integrated Circuits
Supply Voltage - Min:
20 V
Part # Aliases:
1115388
Unit Weight:
0.006653 oz
Tags
CMPA006002, CMPA00, CMPA0, CMPA, CMP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***o-Tech
- 25W, 20 - 6000MHz GaN HEMT MMIC Power Amplifier Flange Package
***i-Key
IC RF AMP 20MHZ-6GHZ 780019
***hardson RFPD
RF & MW POWER AMPLIFIER
GaN HEMT based MMICs
Cree GaN (Gallium Nitride) HEMT (High Electron Mobility Transistor) based MMICs (monolithic microwave integrated circuits) enable extremely wide bandwidths to be achieved in small footprint packages. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors.Learn More
Part # Mfg. Description Stock Price
CMPA0060025F
DISTI # CMPA0060025F-ND
WolfspeedIC RF AMP 20MHZ-6GHZ 780019
RoHS: Compliant
Min Qty: 1
Container: Tray
112In Stock
  • 1:$651.7000
CMPA0060025F-TB
DISTI # CMPA0060025F-TB-ND
WolfspeedBOARD DEMO AMP CKT CMPA0060025F
RoHS: Not compliant
Min Qty: 1
Container: Bulk
11In Stock
  • 1:$715.0000
CMPA0060025F
DISTI # 941-CMPA0060025F
Cree, Inc.RF Amplifier GaN MMIC Power Amp 0.02-6.0GHz, 25 Watt
RoHS: Compliant
30
  • 1:$651.7000
CMPA0060025F-TB
DISTI # 941-CMPA0060025F-TB
Cree, Inc.RF Development Tools Test Board without GaN MMIC
RoHS: Not compliant
4
  • 1:$715.0000
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SCX15DNC

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Board Mount Pressure Sensors 0 to15psid 6PIN SIP UNAMP DIFF GAGE 20V
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OMO.#: OMO-HCMA0503-150-R-EATON

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Mfr.#: CG2H40010F

OMO.#: OMO-CG2H40010F-WOLFSPEED

RF MOSFET HEMT 28V 440166
SCX15DNC

Mfr.#: SCX15DNC

OMO.#: OMO-SCX15DNC-HONEYWELL-SENSING-PRODUCTIVITY

Board Mount Pressure Sensors 0 to15psid 6PIN SIP UNAMP DIFF GAGE 20V
Availability
Stock:
48
On Order:
2031
Enter Quantity:
Current price of CMPA0060025F is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$639.38
$639.38
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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