SI1401EDH-T1-GE3

SI1401EDH-T1-GE3
Mfr. #:
SI1401EDH-T1-GE3
Manufacturer:
Vishay
Description:
MOSFET P-CH 12V 4A SC-70-6
Lifecycle:
New from this manufacturer.
Datasheet:
SI1401EDH-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
SI1401EDH-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer
Vishay Siliconix
Product Category
FETs - Single
Series
TrenchFETR
Packaging
Digi-ReelR Alternate Packaging
Part-Aliases
SI1401EDH-GE3
Unit-Weight
0.000265 oz
Mounting-Style
SMD/SMT
Package-Case
6-TSSOP, SC-88, SOT-363
Technology
Si
Operating-Temperature
-55°C ~ 150°C (TJ)
Mounting-Type
Surface Mount
Number-of-Channels
1 Channel
Supplier-Device-Package
SC-70-6 (SOT-363)
Configuration
Single
FET-Type
MOSFET P-Channel, Metal Oxide
Power-Max
2.8W
Transistor-Type
1 P-Channel
Drain-to-Source-Voltage-Vdss
12V
Input-Capacitance-Ciss-Vds
-
FET-Feature
Standard
Current-Continuous-Drain-Id-25°C
4A (Tc)
Rds-On-Max-Id-Vgs
34 mOhm @ 5.5A, 4.5V
Vgs-th-Max-Id
1V @ 250μA
Gate-Charge-Qg-Vgs
36nC @ 8V
Pd-Power-Dissipation
2.8 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Vgs-Gate-Source-Voltage
10 V
Id-Continuous-Drain-Current
- 4 A
Vds-Drain-Source-Breakdown-Voltage
- 12 V
Vgs-th-Gate-Source-Threshold-Voltage
- 1 V
Rds-On-Drain-Source-Resistance
34 mOhms
Transistor-Polarity
P-Channel
Qg-Gate-Charge
24 nC
Forward-Transconductance-Min
16 S
Tags
SI1401E, SI1401, SI140, SI14, SI1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single P-Channel 12 V 34 mOhm 36 nC Surface Mount Mosfet - SOT-363 (SC-70)
***ical
Trans MOSFET P-CH 12V 4A 6-Pin SC-70 T/R
***nell
MOSFET, P CH, -12V, -4A, SOT-363; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.072ohm; Rds(on) Test Voltage Vgs:-1.5V; Power Dissipation Pd:2.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-363; No. of Pins:6; MSL:-
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Part # Mfg. Description Stock Price
SI1401EDH-T1-GE3
DISTI # V72:2272_07433774
Vishay IntertechnologiesTrans MOSFET P-CH 12V 4A 6-Pin SC-70 T/R
RoHS: Compliant
122
  • 100:$0.2233
  • 25:$0.2693
  • 10:$0.2993
  • 1:$0.4084
SI1401EDH-T1-GE3
DISTI # SI1401EDH-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 12V 4A SC-70-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
164In Stock
  • 1000:$0.1734
  • 500:$0.2243
  • 100:$0.3059
  • 10:$0.4080
  • 1:$0.4800
SI1401EDH-T1-GE3
DISTI # SI1401EDH-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 12V 4A SC-70-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
164In Stock
  • 1000:$0.1734
  • 500:$0.2243
  • 100:$0.3059
  • 10:$0.4080
  • 1:$0.4800
SI1401EDH-T1-GE3
DISTI # SI1401EDH-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 12V 4A SC-70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 3000:$0.1535
SI1401EDH-T1-GE3
DISTI # C1S803603683595
Vishay IntertechnologiesMOSFETs
RoHS: Compliant
122
  • 100:$0.2233
  • 25:$0.2693
  • 10:$0.2993
SI1401EDH-T1-GE3
DISTI # 25778419
Vishay IntertechnologiesTrans MOSFET P-CH 12V 4A 6-Pin SC-70 T/R
RoHS: Compliant
122
  • 100:$0.2233
  • 51:$0.2693
SI1401EDH-T1-GE3
DISTI # SI1401EDH-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 12V 4A 6-Pin SC-70 T/R (Alt: SI1401EDH-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 3000:€0.3089
  • 6000:€0.2109
  • 12000:€0.1809
  • 18000:€0.1669
  • 30000:€0.1559
SI1401EDH-T1-GE3
DISTI # SI1401EDH-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 12V 4A 6-Pin SC-70 T/R - Tape and Reel (Alt: SI1401EDH-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.1309
  • 6000:$0.1269
  • 12000:$0.1209
  • 18000:$0.1179
  • 30000:$0.1149
SI1401EDH-T1-GE3
DISTI # 97W2622
Vishay IntertechnologiesMOSFET Transistor, P Channel, -4 A, -12 V, 0.072 ohm, -1.5 V, 400 mV , RoHS Compliant: Yes0
  • 1:$0.4300
  • 10:$0.3250
  • 25:$0.2970
  • 50:$0.2700
  • 100:$0.2420
  • 500:$0.1990
  • 1000:$0.1540
SI1401EDH-T1-GE3
DISTI # 86R3831
Vishay IntertechnologiesMOSFET, P CHANNEL, -12V, -4A, SOT-363-6, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-4A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.072ohm,Rds(on) Test Voltage Vgs:-1.5V,No. of Pins:6Pins , RoHS Compliant: Yes0
  • 1:$0.1340
  • 3000:$0.1330
  • 6000:$0.1260
  • 12000:$0.1120
SI1401EDH-T1-GE3
DISTI # 69W7175
Vishay IntertechnologiesMOSFET, P CHANNEL, -12V, -4A, SOT-363-6,Transistor Polarity:P Channel,Continuous Drain Current Id:-4A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.072ohm,Rds(on) Test Voltage Vgs:-1.5V,Threshold Voltage Vgs:400mV , RoHS Compliant: Yes0
  • 1:$0.6040
  • 25:$0.5300
  • 50:$0.4640
  • 100:$0.3870
  • 250:$0.3240
  • 500:$0.2720
  • 1000:$0.2320
  • 2500:$0.1890
SI1401EDH-T1-GE3
DISTI # 781-SI1401EDH-T1-GE3
Vishay IntertechnologiesMOSFET -12V Vds 10V Vgs SC70-6
RoHS: Compliant
1112
  • 1:$0.4300
  • 10:$0.3250
  • 100:$0.2420
  • 500:$0.1990
  • 1000:$0.1540
  • 3000:$0.1400
  • 6000:$0.1310
SI1401EDH-T1-GE3
DISTI # 2335277
Vishay IntertechnologiesMOSFET, P CH, -12V, -4A, SOT-363
RoHS: Compliant
0
  • 1:$0.6810
  • 10:$0.5150
  • 100:$0.3840
  • 500:$0.3150
  • 1000:$0.2440
  • 3000:$0.2220
  • 6000:$0.2110
SI1401EDH-T1-GE3
DISTI # 2459404
Vishay IntertechnologiesMOSFET, P CHANNEL, -12V, -4A, SOT-363-6
RoHS: Compliant
0
  • 1:$0.6810
  • 10:$0.5150
  • 100:$0.3840
  • 500:$0.3150
  • 1000:$0.2440
  • 3000:$0.2220
  • 6000:$0.2070
SI1401EDH-T1-GE3
DISTI # 2335277
Vishay IntertechnologiesMOSFET, P CH, -12V, -4A, SOT-363
RoHS: Compliant
0
  • 5:£0.2830
  • 25:£0.2710
  • 100:£0.1850
  • 250:£0.1690
  • 500:£0.1520
SI1401EDH-T1-GE3Vishay IntertechnologiesMOSFET -12V Vds 10V Vgs SC70-6
RoHS: Compliant
Americas - 36000
    Image Part # Description
    SI1401EDH-T1-GE3

    Mfr.#: SI1401EDH-T1-GE3

    OMO.#: OMO-SI1401EDH-T1-GE3

    MOSFET -12V Vds 10V Vgs SC70-6
    SI1401EDH-T1-GE

    Mfr.#: SI1401EDH-T1-GE

    OMO.#: OMO-SI1401EDH-T1-GE-1190

    New and Original
    SI1401EDH-T1-GE3

    Mfr.#: SI1401EDH-T1-GE3

    OMO.#: OMO-SI1401EDH-T1-GE3-VISHAY

    MOSFET P-CH 12V 4A SC-70-6
    SI1401EDH-T1-GE3-CUT TAPE

    Mfr.#: SI1401EDH-T1-GE3-CUT TAPE

    OMO.#: OMO-SI1401EDH-T1-GE3-CUT-TAPE-1190

    New and Original
    Availability
    Stock:
    Available
    On Order:
    2500
    Enter Quantity:
    Current price of SI1401EDH-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.17
    $0.17
    10
    $0.16
    $1.64
    100
    $0.16
    $15.51
    500
    $0.15
    $73.25
    1000
    $0.14
    $137.90
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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