NTMS7N03R2G

Mfr. #:: NTMS7N03R2G
Manufacturer:: ON Semiconductor
Description:: MOSFET 30V 7A N-Channel
Lifecycle:: New from this manufacturer.
Datasheet:: NTMS7N03R2G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: NTMS7N03R2G Datasheet NTMS7N03R2G Datasheet (P4-P6)NTMS7N03R2G Datasheet (P7-P9)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SOIC-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 8.5 A

Rds On - Drain-Source Resistance:: 23 mOhms

Vgs - Gate-Source Voltage:: 20 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 2.5 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Height:: 1.5 mm

Length:: 5 mm

Series:: NTMS7N03R2

Transistor Type:: 1 N-Channel

Type:: MOSFET

Width:: 4 mm

Brand:: ON Semiconductor

Forward Transconductance - Min:: 13 S

Fall Time:: 49 ns, 38 ns

Product Type:: MOSFET

Rise Time:: 38 ns, 71 ns

Factory Pack Quantity:: 2500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 33 ns, 27 ns

Typical Turn-On Delay Time:: 8 ns, 15 ns

Unit Weight:: 0.006596 oz

Tags: NTMS7N03R2G, NTMS7, NTMS, NTM

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Vacuum Packaging with PL

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NTMS7N03R2G Description

***ure Electronics: NTMS7N03R2G Series 30 V 4.8 A SMT N-Channel Power MOSFET - SOIC-8

***th Star Micro: NTMS7N03R2: Power MOSFET 30V 7A 23 mOhm Single N-Channel SO-8

***emi: Single N-Channel Power MOSFET 30V, 7A, 23mΩ

***ical: Trans MOSFET N-CH 30V 8.5A 8-Pin SOIC N T/R

***ark: N CHANNEL MOSFET, 30V, 7mA, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:7mA; On Resistance Rds(on):0.023ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

***nell: MOSFET, N-CH, 30V, 7A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0186ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ark: Mosfet Transistor, P Channel, -9.2 A, -30 V, 15.6 Mohm, -10 V, -1.8 V

***(Formerly Allied Electronics): IRF9333PBF P-channel MOSFET Transistor; 9.2 A; 30 V; 8-Pin SOIC

***roFlash: Single P-Channel 30 V 32.5 mOhm 14 nC HEXFET¬Æ Power Mosfet - SOIC-8

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***ineon: Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***ineon: Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side

*** Stop Electro: Power Field-Effect Transistor, 9.8A I(D), 30V, 0.0175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ure Electronics: N-Channel 30 V 20 mO Surface Mount PowerTrench® Mosfet - SOIC-8

***emi: N-Channel PowerTrench® MOSFET 30V, 9A, 20.0mΩ

***nell: MOSFET, N CHANNEL, 30V, 0.0132OHM, 9A, SOIC-8

***rchild Semiconductor: The FDS8882 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.

*** Source Electronics: MOSFET P-CH 30V 8.8A 8-SOIC / Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC T/R

***ure Electronics: P-Channel 30 V 20 mOhm 17 nC Surface Mount PowerTrench Mosfet - SOIC-8

***emi: 30V P-Channel PowerTrench® MOSFET -8.8A, 20mΩ

***nell: MOSFET, P CHANNEL0, -30V, -8.8A, SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -8.8A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.015ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs

***rchild Semiconductor: This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 25V).

***emi: P-Channel PowerTrench® MOSFET -30V, -8.8A, 20mΩ

***ure Electronics: P-Channel 30 V 20 mO Surface Mount PowerTrench Mosfet - SOIC-8

***rchild Semiconductor: This P–Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Market price

Part #	Mfg.	Description	Stock	Price
NTMS7N03R2G DISTI # NTMS7N03R2GOSCT-ND	ON Semiconductor	MOSFET N-CH 30V 4.8A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	89In Stock	1000:$0.3752 500:$0.4691 100:$0.6332 10:$0.8210 1:$0.9400
NTMS7N03R2G DISTI # NTMS7N03R2GOSDKR-ND	ON Semiconductor	MOSFET N-CH 30V 4.8A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	89In Stock	1000:$0.3752 500:$0.4691 100:$0.6332 10:$0.8210 1:$0.9400
NTMS7N03R2G DISTI # NTMS7N03R2GOSTR-ND	ON Semiconductor	MOSFET N-CH 30V 4.8A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	2500:$0.3302
NTMS7N03R2G DISTI # NTMS7N03R2G	ON Semiconductor	Trans MOSFET N-CH 30V 8.5A 8-Pin SOIC N T/R (Alt: NTMS7N03R2G) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0	2500:$0.2826 5000:$0.2718 7500:$0.2617 12500:$0.2524 25000:$0.2437 62500:$0.2355 125000:$0.2317
NTMS7N03R2G DISTI # NTMS7N03R2G	ON Semiconductor	Trans MOSFET N-CH 30V 8.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: NTMS7N03R2G) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.2469 5000:$0.2449 10000:$0.2419 15000:$0.2389 25000:$0.2329
NTMS7N03R2G DISTI # 863-NTMS7N03R2G	ON Semiconductor	MOSFET 30V 7A N-Channel RoHS: Compliant	2502	1:$0.7800 10:$0.6420 100:$0.4140 1000:$0.3320 2500:$0.2800 10000:$0.2700 25000:$0.2590
NTMS7N03R2 DISTI # 863-NTMS7N03R2	ON Semiconductor	MOSFET 30V 7A N-Channel RoHS: Not compliant	0
NTMS7N03R2G	ON Semiconductor	RoHS: Not Compliant	1075	1000:$0.7500 500:$0.7900 100:$0.8200 25:$0.8600 1:$0.9200
NTMS7N03R2G DISTI # 2774828	ON Semiconductor	MOSFET, N-CH, 30V, 7A, SOIC RoHS: Compliant	0	1:$1.2100 10:$1.0400 100:$0.7100 250:$0.5820 500:$0.4770 1000:$0.4410
NTMS7N03R2G DISTI # 2774828	ON Semiconductor	MOSFET, N-CH, 30V, 7A, SOIC RoHS: Compliant	0	5:£0.5470 25:£0.5000 100:£0.3130 250:£0.2790 500:£0.2460

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NTMS7N03R2G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes