PartNumber | NTMS10P02R2G | NTMS10P02 | NTMS10P02R |
Description | MOSFET 20V 10A P-Channel | ||
Manufacturer | ON Semiconductor | ON | ON |
Product Category | MOSFET | FETs - Single | FETs - Single |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOIC-8 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | P-Channel | - | - |
Vds Drain Source Breakdown Voltage | 20 V | - | - |
Id Continuous Drain Current | 8.8 A | - | - |
Rds On Drain Source Resistance | 20 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 600 mV | - | - |
Vgs Gate Source Voltage | 2.5 V | - | - |
Qg Gate Charge | 48 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 2.5 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | - | - |
Height | 1.5 mm | - | - |
Length | 5 mm | - | - |
Series | NTMS10P02 | - | - |
Transistor Type | 1 P-Channel | - | - |
Type | MOSFET | - | - |
Width | 4 mm | - | - |
Brand | ON Semiconductor | - | - |
Forward Transconductance Min | 30 S | - | - |
Fall Time | 110 ns, 125 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 40 ns, 100 ns | - | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 100 ns, 110 ns | - | - |
Typical Turn On Delay Time | 25 ns | - | - |
Unit Weight | 0.006596 oz | - | - |