NTMS4177PR2G

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOIC-8

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

6.6 A

Rds On - Drain-Source Resistance:

19 mOhms

Vgs th - Gate-Source Threshold Voltage:

1.5 V

Vgs - Gate-Source Voltage:

4.5 V

Qg - Gate Charge:

55 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2.5 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

1.5 mm

Length:

5 mm

Product:

MOSFET Small Signal

Series:

NTMS4177P

Transistor Type:

1 P-Channel

Type:

Power MOSFET

Width:

4 mm

Brand:

ON Semiconductor

Forward Transconductance - Min:

30 S

Fall Time:

36 ns

Product Type:

MOSFET

Rise Time:

13 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

64 ns

Typical Turn-On Delay Time:

18 ns

Unit Weight:

0.019048 oz

Tags

NTMS4177, NTMS417, NTMS41, NTMS4, NTMS, NTM