NTMS4177

NTMS4177PR2G vs NTMS4177PR2G. vs NTMS4177PRZG

 
PartNumberNTMS4177PR2GNTMS4177PR2G.NTMS4177PRZG
DescriptionMOSFET PFET SO8 30V 9.6A TRP CHANNEL MOSFET, -30V, 11.4A, SOIC, FULL REEL, Transistor Polarity:P Channel, Continuous Drain Current Id:-11.4A, Drain Source Voltage Vds:-30V, On Resistance Rds(on):0.01ohm, Rds(on) Test Volta
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOIC-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current6.6 A--
Rds On Drain Source Resistance19 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge55 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.5 mm--
Length5 mm--
ProductMOSFET Small Signal--
SeriesNTMS4177P--
Transistor Type1 P-Channel--
TypePower MOSFET--
Width4 mm--
BrandON Semiconductor--
Forward Transconductance Min30 S--
Fall Time36 ns--
Product TypeMOSFET--
Rise Time13 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time64 ns--
Typical Turn On Delay Time18 ns--
Unit Weight0.019048 oz--
Manufacturer Part # Description RFQ
NTMS4177PR2G MOSFET PFET SO8 30V 9.6A TR
NTMS4177PR2G. P CHANNEL MOSFET, -30V, 11.4A, SOIC, FULL REEL, Transistor Polarity:P Channel, Continuous Drain Current Id:-11.4A, Drain Source Voltage Vds:-30V, On Resistance Rds(on):0.01ohm, Rds(on) Test Volta
NTMS4177PRZG New and Original
ON Semiconductor
ON Semiconductor
NTMS4177PR2G MOSFET P-CH 30V 6.6A 8-SOIC
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