NTMS10P02R2G

Mfr. #:: NTMS10P02R2G
Manufacturer:: ON Semiconductor
Description:: MOSFET 20V 10A P-Channel
Lifecycle:: New from this manufacturer.
Datasheet:: NTMS10P02R2G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: NTMS10P02R2G Datasheet NTMS10P02R2G Datasheet (P4-P6)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SOIC-8

Number of Channels:: 1 Channel

Transistor Polarity:: P-Channel

Vds - Drain-Source Breakdown Voltage:: 20 V

Id - Continuous Drain Current:: 8.8 A

Rds On - Drain-Source Resistance:: 20 mOhms

Vgs th - Gate-Source Threshold Voltage:: 600 mV

Vgs - Gate-Source Voltage:: 2.5 V

Qg - Gate Charge:: 48 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 2.5 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Height:: 1.5 mm

Length:: 5 mm

Series:: NTMS10P02

Transistor Type:: 1 P-Channel

Type:: MOSFET

Width:: 4 mm

Brand:: ON Semiconductor

Forward Transconductance - Min:: 30 S

Fall Time:: 110 ns, 125 ns

Product Type:: MOSFET

Rise Time:: 40 ns, 100 ns

Factory Pack Quantity:: 2500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 100 ns, 110 ns

Typical Turn-On Delay Time:: 25 ns

Unit Weight:: 0.006596 oz

Tags: NTMS10P02R2, NTMS10P02R, NTMS1, NTMS, NTM

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NTMS10P02R2G Description

***ure Electronics: P-Channel 20 V 14 mOhm 2.5 W Surface Mount Power MOSFET - SOIC-8

***emi: Single P−Channel Enhancement−Mode Power MOSFET -20V, -10A, 14mΩ

***(Formerly Allied Electronics): NTMS10P02R2G P-channel MOSFET Transistor, 6.4 A, 20 V, 8-Pin SOIC | ON Semiconductor NTMS10P02R2G

***th Star Micro: NTMS10P02: Power MOSFET 20V 10A 14 mOhm Single P-Channel SO-8

***Yang: Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R - Tape and Reel

***nell: MOSFET, P-CH, -20V, -8.8A, SOIC-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -8.8A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.012ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -880mV; Power Dissipation Pd: 1.6W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***emi: P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -11A, 14mΩ

***Yang: Trans MOSFET P-CH 20V 11A 8-Pin SOIC N T/R - Tape and Reel

***enic: 20V 11A 14m´Î@4.5V11A 2.5W 1.5V@250Ã×A P Channel SOIC-8_150mil MOSFETs ROHS

***ment14 APAC: MOSFET, P, SMD, 8-SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-11A; Source Voltage Vds:-20V; On Resistance

***rchild Semiconductor: This P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).

***nell: MOSFET, P, SMD, 8-SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -11A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -830mV; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 11A; Operating Temperature Min: -55°C; Termination Type: Surface Mount Device; Voltage Vds Typ: -20V; Voltage Vgs Max: -830mV; Voltage Vgs Rds on Measurement: -4.5V

***ure Electronics: ZXMN2A02 Series N-Channel 20 V 10.2 A 2.5 W Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 20V 10.2A Automotive 8-Pin SOIC T/R

***S: French Electronic Distributor since 1988

***i-Key: MOSFET N-CH 20V 10.5A 8-SOIC

***Yang: MOSFET Single N-Ch FET Enhancement Mode - Bulk

***S: French Electronic Distributor since 1988

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:10.5A; On Resistance, Rds(on):0.0135ohm; Rds(on) Test Voltage, Vgs:4.5V; Drain-Source Breakdown Voltage:20V RoHS Compliant: Yes

***emi: Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 14mΩ

***Yang: Transistor MOSFET Array Dual N-CH 20V 9.4A 8-Pin SOIC T/R - Tape and Reel

***ure Electronics: Dual N-Channel 20 V 14 mOhm PowerTrench Mosfet - SOIC-8

***ponent Sense: Mosfet Array 2 N-Channel (Dual) 20V 9.4A 900mW Surface Mount 8-SOIC

***ical: Trans MOSFET N-CH 20V 9.4A 8-Pin SOIC N T/R

***hard Electronics: ON SEMICONDUCTOR - FDS6898A - DUAL N CHANNEL MOSFET, 20V, SOIC

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:9.4A; On Resistance, Rds(on):14mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SO-8 ;RoHS Compliant: Yes

***rchild Semiconductor: These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***nell: MOSFET, DUAL, N, SMD, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 9.4A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Continuous Drain Current Id, N Channel: 9.4A; Current Id Max: 9.4A; Drain Source Voltage Vds, N Channel: 20V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 0.01ohm; Operating Temperature Min: -55°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 20V; Voltage Vgs Max: 1V; Voltage Vgs Rds on Measurement: 4.5V

***emi: Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 14mΩ

***Yang: Transistor MOSFET Array Dual N-CH 20V 9.4A 8-Pin SOIC T/R - Tape and Reel

***ure Electronics: Dual N-Channel 20 V 14 mOhm PowerTrench Mosfet -SOIC-8

***enic: 20V 9.4A 14m´Î@4.5V9.4A 900mW 1.5V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS

***ment14 APAC: MOSFET, NN; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:9.4A; Current Id Max:9.4A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):14mohm; Package / Case:SO-8; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***et Japan: Transistor MOSFET Array Dual P-CH 20V 9A 8-Pin SOIC T/R

***ure Electronics: Dual P-Channel 20 V 0.018 Ohm 42 nC HEXFET® Power Mosfet - SOIC-8

***ineon: Benefits: RoHS Compliant; Low RDS(on); Low Profile (less than 1.1 mm); Dual P-Channel MOSFET

*** Stop Electro: Power Field-Effect Transistor, 9A I(D), 20V, 0.018ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***nell: MOSFET, DUAL, PP, LOGIC, SO-8; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.018ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V;

Market price

Part #	Mfg.	Description	Stock	Price
NTMS10P02R2G DISTI # 24327549	ON Semiconductor	Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R RoHS: Compliant	2500	2500:$0.5504
NTMS10P02R2G DISTI # NTMS10P02R2GOSCT-ND	ON Semiconductor	MOSFET P-CH 20V 8.8A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3678In Stock	1000:$0.7899 500:$1.0006 100:$1.2902 10:$1.6330 1:$1.8400
NTMS10P02R2G DISTI # NTMS10P02R2GOSDKR-ND	ON Semiconductor	MOSFET P-CH 20V 8.8A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3678In Stock	1000:$0.7899 500:$1.0006 100:$1.2902 10:$1.6330 1:$1.8400
NTMS10P02R2G DISTI # NTMS10P02R2GOSTR-ND	ON Semiconductor	MOSFET P-CH 20V 8.8A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	2500:$0.7158
NTMS10P02R2G DISTI # C1S541900478792	ON Semiconductor	Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R RoHS: Compliant	2500	2500:$0.6690
NTMS10P02R2G DISTI # NTMS10P02R2G	ON Semiconductor	Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R - Tape and Reel (Alt: NTMS10P02R2G) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.5539 5000:$0.5509 10000:$0.5439 15000:$0.5369 25000:$0.5229
NTMS10P02R2G DISTI # NTMS10P02R2G	ON Semiconductor	Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R (Alt: NTMS10P02R2G) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0	2500:$0.6190 5000:$0.5952 7500:$0.5732 12500:$0.5527 25000:$0.5336 62500:$0.5158 125000:$0.5074
NTMS10P02R2G DISTI # 61K1292	ON Semiconductor	P CHANNEL MOSFET, -20V, 10A, SOIC, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:10mA,Drain Source Voltage Vds:-20V,On Resistance Rds(on):14mohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-880mV , RoHS Compliant: Yes	0	1:$1.6300 25:$1.3100 100:$1.0000 250:$0.9720 500:$0.8840 1000:$0.6980 2500:$0.6190 5000:$0.6000
NTMS10P02R2G DISTI # 81Y7051	ON Semiconductor	MOSFET, P-CH, -20V, -8.8A, SOIC-8,Transistor Polarity:P Channel,Continuous Drain Current Id:-8.8A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.012ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-880mV,Power , RoHS Compliant: Yes	2544	1:$1.5300 10:$1.3100 25:$1.2100 50:$1.1000 100:$1.0000 250:$0.9420 500:$0.8840 1000:$0.6980
NTMS10P02R2G DISTI # 70467536	ON Semiconductor	NTMS10P02R2G P-channel MOSFET Transistor,6.4 A,20 V,8-Pin SOIC RoHS: Compliant	0	20:$1.5500 50:$1.4700 100:$1.4000 500:$1.3300
NTMS10P02R2G DISTI # 863-NTMS10P02R2G	ON Semiconductor	MOSFET 20V 10A P-Channel RoHS: Compliant	5071	1:$1.5300 10:$1.3100 100:$1.0000 500:$0.8840 1000:$0.6980 2500:$0.6190 10000:$0.5950
NTMS10P02R2 DISTI # 863-NTMS10P02R2	ON Semiconductor	MOSFET 20V 10A P-Channel RoHS: Not compliant	0
NTMS10P02R2G	ON Semiconductor	RoHS: Not Compliant	57343	1000:$0.8400 500:$0.8800 100:$0.9200 25:$0.9600 1:$1.0300
NTMS10P02R2G	ON Semiconductor	SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 8.8A I(D), 20V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET	801	367:$0.4875 65:$0.5460 1:$1.5600
NTMS10P02R2G	ON Semiconductor	RoHS: Compliant	Europe - 7500
NTMS10P02R2G	ON Semiconductor	INSTOCK	3445
NTMS10P02R2G DISTI # XSFP00000058270	ON SEMICONDUCTOR	SmallSignalField-EffectTransistor,8.8AI(D),20V,1-Element,P-Channel,Silicon,Metal-oxideSemiconductor FET RoHS: Compliant	3365	2500:$0.7467 3365:$0.7000
NTMS10P02R2G DISTI # 2533197	ON Semiconductor	MOSFET, P-CH, -20V, -8.8A, SOIC-8 RoHS: Compliant	2689	5:£1.2200 25:£1.0500 100:£0.8080 250:£0.7600 500:£0.7130
NTMS10P02R2G DISTI # 2533197	ON Semiconductor	MOSFET, P-CH, -20V, -8.8A, SOIC-8 RoHS: Compliant	2544	1:$2.4300 10:$2.0700 100:$1.5900 500:$1.4000 1000:$1.1100 2500:$0.9800 10000:$0.9420

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NTMS10P02R2G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes