A3G35H100-04SR3

Mfr. #:: A3G35H100-04SR3
Manufacturer:: NXP Semiconductors
Description:: RF MOSFET Transistors Airfast RF Power GaN Transistor, 3400-3600 MHz, 14 W Avg., 48 V
Lifecycle:: New from this manufacturer.
Datasheet:: A3G35H100-04SR3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: A3G35H100-04SR3 more Information A3G35H100-04SR3 Product Details

Product Attribute
Attribute Value

Manufacturer:: NXP

Product Category:: RF MOSFET Transistors

RoHS:: Y

Transistor Polarity:: Dual N-Channel

Technology:: Si

Id - Continuous Drain Current:: 8.04 mA

Vds - Drain-Source Breakdown Voltage:: 125 V

Gain:: 14 dB

Output Power:: 14 W

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Mounting Style:: SMD/SMT

Package / Case:: NI-780S-4L

Packaging:: Reel

Operating Frequency:: 3400 MHz to 3600 MHz

Type:: RF Power MOSFET

Brand:: NXP Semiconductors

Number of Channels:: 2 Channel

Product Type:: RF MOSFET Transistors

Factory Pack Quantity:: 250

Subcategory:: MOSFETs

Vgs - Gate-Source Voltage:: - 8 V

Vgs th - Gate-Source Threshold Voltage:: - 2.3 V

Part # Aliases:: 935368927128

Tags: A3G

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
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A3G35H100-04SR3 More Information

Airfast® Third-Generation Power Amplifiers: NXP Semiconductors Airfast® Third-Generation Power Amplifiers provide the best in class performance for the critical parameters that include efficiency, gain, RF power, and signal bandwidth. The Airfast third-generation technology reduces the footprint required to deliver specific RF output power. These amplifiers include 28V and 48V LDMOS transistors. The Airfast third-generation amplifiers are designed for the asymmetrical Doherty amplifier architectures. These amplifiers feature high efficiency, reduced solution size, thermal performance, and operate at wideband frequency. The Airfast third-generation amplifiers support all global cellular standards including LTE and NR for 5G. These amplifiers reduce both the size of cellular base stations and the installation costs.

RF Power GaN Portfolio: NXP Semiconductors RF Power Gallium Nitride (GaN) Portfolio provides state of the art linearizability and RF performance that enables 5G deployment. These transistors offer solutions for cellular infrastructure, defense, and industrial markets. The GaN transistors provide wideband performance and high-frequency operation. These transistors feature end-to-end applications, solution support, and high-volume production. The GaN transistors come with advanced GaN on SiC technology that offers high power density. These transistors are designed for cellular base station applications.

Market price

Part #	Mfg.	Description	Stock	Price
A3G35H100-04SR3 DISTI # A3G35H100-04SR3	Avnet, Inc.	Trans RF FET 125VDC 4-Pin NI-780S T/R - Tape and Reel (Alt: A3G35H100-04SR3) RoHS: Compliant Min Qty: 250 Container: Reel	Americas - 0	2500:$46.6900 1500:$47.5900 1000:$49.3900 500:$51.3900 250:$53.4900
A3G35H100-04SR3 DISTI # 58AC6127	NXP Semiconductors	AIRFAST RF POWER GAN TRANSISTOR, 3400-3600 MHZ, 14 W AVG., 48 V TR	0	100:$45.9400 50:$48.8800 25:$49.6200 10:$50.3500 5:$51.8200 1:$53.2900
A3G35H100-04SR3 DISTI # 771-A3G35H100-04SR3	NXP Semiconductors	RF MOSFET Transistors A3G35H100-04S/CFM4F///REEL 13 Q2 NDP RoHS: Compliant	0	250:$49.6200
A3G35H100-04SR3 DISTI # A3G35H100-04SR3	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	0	250:$55.1200

A3G35H100-04SR3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes