CSD25404Q3

Product Attribute

Attribute Value

Manufacturer:

Texas Instruments

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

VSON-Clip-8

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

104 A

Rds On - Drain-Source Resistance:

6.5 mOhms

Vgs th - Gate-Source Threshold Voltage:

650 mV

Vgs - Gate-Source Voltage:

4.5 V

Qg - Gate Charge:

10.8 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

96 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

NexFET

Packaging:

Reel

Height:

1 mm

Length:

3.3 mm

Series:

CSD25404Q3

Transistor Type:

1 P-Channel Power MOSFET

Width:

3.3 mm

Brand:

Texas Instruments

Fall Time:

13 ns

Product Type:

MOSFET

Rise Time:

8 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

35 ns

Typical Turn-On Delay Time:

13 ns

Unit Weight:

0.001549 oz

Tags

CSD2540, CSD254, CSD25, CSD2, CSD