IPP114N03L G

Mfr. #:: IPP114N03L G
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 30V 30A TO220-3 OptiMOS 3
Lifecycle:: New from this manufacturer.
Datasheet:: IPP114N03L G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 30 A

Rds On - Drain-Source Resistance:: 11.4 mOhms

Vgs - Gate-Source Voltage:: 20 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 38 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Tube

Height:: 15.65 mm

Length:: 10 mm

Transistor Type:: 1 N-Channel

Width:: 4.4 mm

Brand:: Infineon Technologies

Fall Time:: 2.4 ns

Product Type:: MOSFET

Rise Time:: 3 ns

Factory Pack Quantity:: 500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 15 ns

Typical Turn-On Delay Time:: 3.8 ns

Part # Aliases:: IPP114N03LGHKSA1 SP000264168

Unit Weight:: 0.211644 oz

Tags: IPP114N0, IPP114, IPP11, IPP1, IPP

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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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IPP114N03L G Description

***et: Trans MOSFET N-CH 30V 30A 3-Pin(3+Tab) TO-220

***el Electronic: Power Field-Effect Transistor, 30A I(D), 30V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

***nell: MOSFET, N CH, 30A, 30V, PG-TO220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0095ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 38W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 30A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Transistor Type: Power MOSFET; Voltage Vgs Max: 20V

***emi: N-Channel PowerTrench® MOSFET 30V, 12A, 11.5mΩ

*** Source Electronics: MOSFET N-CH 30V 20A POWER33 / Trans MOSFET N-CH Si 30V 12A 8-Pin WDFN EP T/R

***nell: MOSFET, N CH, 30V, 20A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

***et: Trans MOSFET N-CH 25V 50A 3-Pin(3+Tab) TO-220AB

***i-Key Marketplace: N-CHANNEL POWER MOSFET

***el Nordic: Contact for details

***emi: Power MOSFET 25V 75A 8 mOhm Single N-Channel D2PAK

***ponent Stockers USA: 75 A 25 V 0.013 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***r Electronics: Power Field-Effect Transistor, 75A I(D), 25V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ure Electronics: Single N-Channel 30 V 4.2 mOhm 38 nC OptiMOS Power Mosfet - TO-220-3

***ical: Trans MOSFET N-CH 30V 70A 3-Pin(3+Tab) TO-220 Tube

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, PG-TO220-3, RoHS

***nell: MOSFET, N-CH, 30V, 70A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 70A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.2V; Power Dissipation Pd: 79W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS 3 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 4.2 / Gate-Source Voltage V = 20 / Fall Time ns = 4.4 / Rise Time ns = 5.6 / Turn-OFF Delay Time ns = 28 / Turn-ON Delay Time ns = 7.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 79

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***ser: MOSFETs- Power and Small Signal 25V 75A N-Channel No-Cancel/No-Return

***i-Key: MOSFET N-CH 25V 9.7A TO220AB

***r Electronics: Power Field-Effect Transistor, 75A I(D), 25V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

*** Electronics: N-CHANNEL POWER MOSFET

***et Europe: Trans MOSFET N-CH 30V 50A 3-Pin(3+Tab) TO-220

***el Electronic: Power Field-Effect Transistor, 50A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

***ment14 APAC: MOSFET, N CH, 50A, 30V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5.4mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:56W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:50A; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

Market price

Part #	Mfg.	Description	Stock	Price
IPP114N03L G DISTI # IPP114N03LGIN-ND	Infineon Technologies AG	MOSFET N-CH 30V 30A TO-220-3 RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call
IPP114N03L G DISTI # IPP114N03LG	Infineon Technologies AG	Trans MOSFET N-CH 30V 30A 3-Pin(3+Tab) TO-220 - Bulk (Alt: IPP114N03LG) RoHS: Not Compliant Min Qty: 834 Container: Bulk	Americas - 0	834:$0.5329 836:$0.5129 1670:$0.4949 4170:$0.4779 8340:$0.4699
IPP114N03LGHKSA1 DISTI # IPP114N03LGHKSA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 30A 3-Pin TO-220 Tube - Bulk (Alt: IPP114N03LGHKSA1) Min Qty: 1137 Container: Bulk	Americas - 0	1137:$0.3169 1139:$0.3049 2276:$0.2939 5685:$0.2839 11370:$0.2789
IPP114N03L G DISTI # 726-IPP114N03LG	Infineon Technologies AG	MOSFET N-Ch 30V 30A TO220-3 OptiMOS 3 RoHS: Compliant	0
IPP114N03LG	Infineon Technologies AG	Power Field-Effect Transistor, 30A I(D), 30V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	13946	1000:$0.4000 500:$0.4200 100:$0.4300 25:$0.4500 1:$0.4900
IPP114N03LGHKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 30A I(D), 30V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant	7642	1000:$0.2900 500:$0.3100 100:$0.3200 25:$0.3300 1:$0.3600

Image	Part #	Description
	Mfr.#: IPP114N12N3 G OMO.#: OMO-IPP114N12N3-G	MOSFET N-Ch 120V 75A TO220-3 OptiMOS 3
	Mfr.#: IPP114N03L G OMO.#: OMO-IPP114N03L-G	MOSFET N-Ch 30V 30A TO220-3 OptiMOS 3
	Mfr.#: IPP114N03LG OMO.#: OMO-IPP114N03LG-1190	Power Field-Effect Transistor, 30A I(D), 30V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
	Mfr.#: IPP114N12N OMO.#: OMO-IPP114N12N-1190	New and Original
	Mfr.#: IPP114N12N3 OMO.#: OMO-IPP114N12N3-1190	New and Original
	Mfr.#: IPP114N12N3 G(SP00065274 OMO.#: OMO-IPP114N12N3-G-SP00065274-1190	New and Original
	Mfr.#: IPP114N12N3-114N12N OMO.#: OMO-IPP114N12N3-114N12N-1190	New and Original
	Mfr.#: IPP114N12N3G OMO.#: OMO-IPP114N12N3G-1190	Power Field-Effect Transistor, 75A I(D), 100V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
	Mfr.#: IPP114N12N3G,114N12N OMO.#: OMO-IPP114N12N3G-114N12N-1190	New and Original
	Mfr.#: IPP114N12N3 G OMO.#: OMO-IPP114N12N3-G-124	Darlington Transistors MOSFET N-Ch 120V 75A TO220-3 OptiMOS 3

IPP114N03L G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes