DMN3730U-7

Mfr. #:: DMN3730U-7
Manufacturer:: Diodes Incorporated
Description:: MOSFET MOSFET BVDSS: 25V-30 SOT23,3K
Lifecycle:: New from this manufacturer.
Datasheet:: DMN3730U-7 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: DMN3730U-7 Datasheet DMN3730U-7 Datasheet (P4-P6)DMN3730U-7 Datasheet (P7)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Diodes Incorporated

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SOT-23-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 940 mA

Rds On - Drain-Source Resistance:: 460 mOhms

Vgs th - Gate-Source Threshold Voltage:: 450 mV

Vgs - Gate-Source Voltage:: 4.5 V

Qg - Gate Charge:: 1.6 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 0.71 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Series:: DMN37

Transistor Type:: 1 N-Channel

Brand:: Diodes Incorporated

Fall Time:: 13 ns

Product Type:: MOSFET

Rise Time:: 2.8 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 38 ns

Typical Turn-On Delay Time:: 3.5 ns

Unit Weight:: 0.000282 oz

Tags: DMN3730U, DMN3730, DMN37, DMN3, DMN

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

DMN3730U-7 Description

***ure Electronics: N-Channel 30 V 460 mOhm Surface Mount Enhancement Mode Mosfet - SOT-23-3

***ical: Trans MOSFET N-CH 30V 0.94A Automotive 3-Pin SOT-23 T/R

***nell: MOSFET, N-CH, 30V, 0.75A, SOT23; Transistor Polarity: N Channel; Continuous Drain Current Id: 750mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.46ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 950mV; Power Dissipation Pd: 710mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***Yang: Trans MOSFET N-CH 25V 0.68A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled

***enic: 25V 680mA 450m¦¸@4.5V,500mA 350mW 1.5V@250¦ÌA N Channel SOT-23(SOT-23-3) MOSFETs ROHS

***et Europe: Trans MOSFET N-CH 25V 0.68A 3-Pin SOT-23 T/R

***ure Electronics: N-Channel 25 V 0.45 Ohm Surface Mount Digital FET - SOT-23-3

***nell: MOSFET, N DIGITAL SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 680mA; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.6ohm; Rds(on) Test Voltage Vgs: 2.7V; Threshold Voltage Vgs: -; Power Dissip

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 680 / Drain-Source Voltage (Vds) V = 25 / ON Resistance (Rds(on)) mOhm = 600 / Gate-Source Voltage V = 8 / Fall Time ns = 13 / Rise Time ns = 8.5 / Turn-OFF Delay Time ns = 17 / Turn-ON Delay Time ns = 3 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 350

***rchild Semiconductor: These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.

***ure Electronics: ZXM61P03F 30 V 0.35 Ohm P-Channel Enhancement Mode Vertical DMOS FET - SOT-23

***ow.cn: Trans MOSFET P-CH 30V 1.1A 3-Pin SOT-23 T/R

***(Formerly Allied Electronics): MOSFET P-Channel 30V HDMOS SOT23

***des Inc SCT: P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS

***S: French Electronic Distributor since 1988

***nell: MOSFET, P SOT-23 REEL 3K; Transistor Polarity:P; Max Current Id:-1.1A; Max Voltage Vds:30V; On State Resistance:0.35ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:-20V; Power Dissipation:625mW; Operating Temperature Range:-55ºC to +150ºC; Transistor Case Style:SOT-23; No. of Pins:3; Case Style:SOT-23; Cont Current Id:1.1A; Current Temperature:25°C; Max Junction Temperature Tj:150°C; Max On State Resistance:0.35ohm; Max Power Dissipation Ptot:625W; Min Junction Temperature, Tj:-55°C; Min Voltage Vgs th:-1V; No. of Transistors:1; Power Dissipation Pd:625W; Pulse Current Idm:4.3A; Reel Quantity:3000; SMD Marking:P03; Tape Width:8mm; Termination Type:SMD; Transistor Type:MOSFET; Typ Voltage Vds:-30V; Typ Voltage Vgs th:-1V; Voltage Vgs Rds on Measurement:-10V

***ure Electronics: P-Channel 30 V 530 mA 1 Ohm Surface Mount Enhancement Mode Mosfet - SOT-23

***ark: Mosfet, P-Ch, 30V, 0.67A, Sot-23 Rohs Compliant: Yes

***(Formerly Allied Electronics): MOSFET P-Ch 30V 0.67A Enhancement SOT23

***des Inc SCT: P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 8±V VGS

*** Source Electronics: Trans MOSFET P-CH 30V 1.1A 3-Pin SOT-23 T/R / MOSFET P-CH 30V 1.1A SSOT3

***emi: -30V P-Channel Logic Level Enhancement Mode Field Effect Transistor

***nell: MOSFET, P SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: 1.1A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.6V; Power Dissipatio

***ment14 APAC: MOSFET, P SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:30V; On Resistance Rds(on):300mohm; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23 (TO-236); Power Dissipation Pd:500mW; Power Dissipation Pd:500mW; Pulse Current Idm:10A; SMD Marking:NDS356AP; Tape Width:8mm; Termination Type:SMD; Voltage Vgs th Max:-2.5V

***rchild Semiconductor: SuperSOT™-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

***Yang: Trans MOSFET P-CH 25V 0.46A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled

***id Electronics: Transistor MOSFET P-Ch. -0,46A/-25V SOT23 FDV 304 P

***enic: 25V 460mA 1.1´Î@4.5V500mA 350mW 1.5V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS

***ure Electronics: P-Channel 25 V 1.5 Ohm Surface Mount Digital FET - SOT-23-3

***r Electronics: Small Signal Field-Effect Transistor, 0.46A I(D), 25V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

***rchild Semiconductor: This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.

***trelec: Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) mA = -460 / Drain-Source Voltage (Vds) V = -25 / ON Resistance (Rds(on)) Ohm = 1.5 / Gate-Source Voltage V = -8 / Fall Time ns = 35 / Rise Time ns = 8 / Turn-OFF Delay Time ns = 55 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 350

***ure Electronics: Si2336DS Series N-Channel 30 V 42 mOhm 1.25 W Surface Mount Mosfet - TO-236

***nsix Microsemi: Small Signal Field-Effect Transistor, 5.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

***ment14 APAC: MOSFET,N CH,30V,5.2A,DIODE,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:5.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.034ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.3A; Power Dissipation Pd:1.25W; Voltage Vgs Max:8V

Market price

Part #	Mfg.	Description	Stock	Price
DMN3730U-7 DISTI # DMN3730U-7DITR-ND	Diodes Incorporated	MOSFET N-CH 30V 750MA SOT23 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.1511
DMN3730U-7 DISTI # DMN3730U-7DICT-ND	Diodes Incorporated	MOSFET N-CH 30V 750MA SOT23 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.1684 500:$0.2194 100:$0.3129 10:$0.4480 1:$0.5700
DMN3730U-7 DISTI # DMN3730U-7DIDKR-ND	Diodes Incorporated	MOSFET N-CH 30V 750MA SOT23 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.1684 500:$0.2194 100:$0.3129 10:$0.4480 1:$0.5700
DMN3730U-7 DISTI # DMN3730U-7	Diodes Incorporated	Trans MOSFET N-CH 30V 0.94A 3-Pin SOT-23 T/R (Alt: DMN3730U-7) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.1099 6000:€0.0789 12000:€0.0739 18000:€0.0649 30000:€0.0599
DMN3730U-7 DISTI # DMN3730U-7	Diodes Incorporated	Trans MOSFET N-CH 30V 0.94A 3-Pin SOT-23 T/R - Tape and Reel (Alt: DMN3730U-7) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.0859 6000:$0.0819 12000:$0.0779 18000:$0.0739 30000:$0.0729
DMN3730U-7 DISTI # 70550685	Diodes Incorporated	30V N-Channel Enhancement MOSFET SOT-23 RoHS: Compliant	0	250:$0.2000 750:$0.1600 1500:$0.1400 3000:$0.1200
DMN3730U-7 DISTI # 621-DMN3730U-7	Diodes Incorporated	MOSFET MOSFET BVDSS: 25V-30 SOT23,3K RoHS: Compliant	110	1:$0.4400 10:$0.3330 100:$0.1800 1000:$0.1350 3000:$0.1170 9000:$0.1090
DMN3730U-7 DISTI # 8232946P	Zetex / Diodes Inc	30V N-CHANNEL ENHANCEMENT MOSFET SOT-23, RL	3300	150:£0.1230 300:£0.1190 600:£0.1160 1200:£0.1130

Image	Part #	Description
	Mfr.#: UCC28704DBVR-1 OMO.#: OMO-UCC28704DBVR-1	AC/DC Converters Dragongfly- PSR Controller w/t Output UV
	Mfr.#: TPS2069DDBVR OMO.#: OMO-TPS2069DDBVR	Power Switch ICs - Power Distribution CURRENT-LIMITED POWER-DISTRIBUTION SW
	Mfr.#: 5002 OMO.#: OMO-5002	Circuit Board Hardware - PCB TEST POINT WHITE .040
	Mfr.#: RC0603FR-071KL OMO.#: OMO-RC0603FR-071KL	Thick Film Resistors - SMD 1K OHM 1%
	Mfr.#: RC0603FR-073K3L OMO.#: OMO-RC0603FR-073K3L	Thick Film Resistors - SMD 3.3K OHM 1%
	Mfr.#: TPS2069DDBVR OMO.#: OMO-TPS2069DDBVR-TEXAS-INSTRUMENTS	IC PWR DIST SWITCH SOT23-5
	Mfr.#: 5000 OMO.#: OMO-5000-OHMITE	Knobs & Dials 2-3/16' 1-100DIAL
	Mfr.#: 5002 OMO.#: OMO-5002-KEYSTONE-ELECTRONICS	Conn Test Point SKT 1 POS ST Thru-Hole 1 Port
	Mfr.#: RC0603FR-07100KL OMO.#: OMO-RC0603FR-07100KL-YAGEO	Thick Film Resistors - SMD 100K OHM 1%
	Mfr.#: RC0603FR-0720KL OMO.#: OMO-RC0603FR-0720KL-YAGEO	Thick Film Resistors - SMD 20K OHM 1%

DMN3730U-7

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes